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SS56F

SS56F

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    SMAF

  • 描述:

    肖特基二极管 VR=60V IF=5A VF=0.70V IR=500uA

  • 数据手册
  • 价格&库存
SS56F 数据手册
SS52F THRU SS5200F Reverse Voltage - 20 to 200 Volts Forward Current - 5.0 Ampere SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features SMAF  The plastic package carries Underwriters Laboratory Flammability Classification 94V-0  For surface mounted applications  Metal silicon junction,majority carrier conduction  Low power loss,high efficiency 0.106(2.70) 0.094(2.40) 0.063 (1.60) 0.051 (1.30) 0.146(3.70) 0.130(3.30)  Built-in strain relief,ideal for automated placement  High forward surge current capability  High temperature soldering guaranteed: 260 °C/10 seconds at terminals 0.047(1.20) 0.035(0.90) 0.008(0.20) 0.005(0.12) 0.047(1.20) 0.031(0.80) 0.193(4.90) 0.173(4.40) Mechanical Data Case: JEDEC SMAF molded plastic body Terminals: Solderable per MIL-STD-750,Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight : 0.0018 ounce, 0.064 grams Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter SYMBOLS Marking Code Maximum repetitive peak reverse voltage VRRM Maximum RMS voltage VRMS VDC Maximum DC blocking voltage Maximum average forward rectified current at TL(see fig.1) Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) Maximum instantaneous forward voltage at 5.0A Maximum DC reverse current at rated DC blocking voltage TA=25℃ TA=125℃ Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) Operating junction temperature range Storage temperature range SS52F SS53F SS54F SS55F SS56F SS58F SS510F SS5150F SS5200F MDD SS52F MDD SS53F MDD SS54F MDD SS55F MDD SS56F MDD SS58F MDD SS510F MDD SS5150F MDD SS5200F UNITS 20 14 20 30 21 30 40 28 40 50 35 50 60 42 60 80 56 80 100 70 100 150 105 150 200 140 200 V V V I(AV) 5.0 A IFSM 150 A VF IR 0.55 0.70 0.5 20.0 CJ RJA TJ TSTG 0.85 10.0 0.95 0.2 2.0 mA 200 pF 50.0 ℃/W -50 to +125 ℃ -50 to +150 ℃ -55 to +150 Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas http://www.microdiode.com V Rev:2024A1 Page :1 SS52F THRU SS5200F Reverse Voltage - 20 to 200 Volts Forward Current - 5.0 Ampere FIG. 1- FORWARD CURRENT DERATING CURVE 5.0 4.0 Single Phase Half Wave 60Hz Resistive or inductive Load 3.0 2.0 SS52F-SS56F SS58F-SS5200F 1.0 0 0 25 50 75 100 125 150 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES Typical Characterisitics FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 150 120 90 60 30 175 0 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 1 10 AMBIENT TEMPERATURE, C NUMBER OF CYCLES AT 60 Hz 50 INSTANTANEOUS FORWARD CURRENT,AMPERES TJ=25 C 10.0 1 SS52F-SS54F SS55F-SS56F SS58F-SS5150F SS5200F FIG. 4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 0.1 100 10 TJ=100 C 1 TJ=75 C 0.1 0.01 TJ=25 C 0.001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 20 40 60 80 100 1.6 INSTANTANEOUS FORWARD VOLEAGE, VOLTS FIG. 5-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 0 PERCENT OF PEAK REVERSE VOLTAGE,% 0 2000 1000 TJ=25 C 100 TRANSIENT THERMAL IMPEDANCE, C/W 0.01 100 FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE 100 10 1 0.1 0.01 0.1 1 10 100 10 0.1 1.0 10 REVERSE VOLTAGE,VOLTS 100 t,PULSE DURATION,sec. The curve above is for reference only. http://www.microdiode.com Rev:2024A1 Page :2 SS52F THRU SS5200F Reverse Voltage - 20 to 200 Volts Forward Current - 5.0 Ampere Packing information unit:mm P0 P1 d Item E F B A Carrier width Carrier length Carrier depth Sprocket hole 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width W P D2 T D1 C W1 D Symbol Tolerance SMAF A B C d D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.05 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 2.80 4.75 1.42 1.50 178.00 54.40 13.00 1.75 5.05 4.00 4.00 2.00 0.30 8.00 12.30 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Reel packing PACKAGE SMAF REEL SIZE 7" REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) CARTON SIZE (m/m) CARTON (pcs) APPROX. GROSS WEIGHT (kg) 3,000 4.0 6,000 210*208*203 178 400*265*400 120,000 10.0 Suggested Pad Layout Symbol A Unit (mm) 1.8 Unit (inch) 0.071 B 1.6 0.063 C 3.8 0.150 D 2.2 0.087 E 5.4 0.213 Important Notice and Disclaimer Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Jiangsu) assume any liability for application assistance or customer product design. Microdiode Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Jiangsu). Microdiode Electronics (Jiangsu) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Jiangsu). http://www.microdiode.com Rev:2024A1 Page :3
SS56F 价格&库存

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SS56F
  •  国内价格
  • 1+0.30000
  • 100+0.28000
  • 300+0.26000
  • 500+0.24000
  • 2000+0.23000
  • 5000+0.22400

库存:0