KND4360A

KIA 4.0A 600V N-CHANNEL MOSFET 4N60H SEMICONDUCTORS 1.Description The KIA4N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. 2. Features n RDS(ON) =2.3Ω@ VGS=10V n Low gate charge (typical 13.5nC) n High ruggedness n Fast switching capability n Avalanche energy specified n Improved dv/dt capability 3. Pin configuration 1 of 6 Pin Function 1 Gate 2 Drain 3 Source 4 Drain Rev 1.2 Dec 2014 KIA 4.0A 600V N-CHANNEL MOSFET 4N60H SEMICONDUCTORS 4. Absolute maximum ratings Parameter Symbol Drain-source voltage VDSS Gate-source voltage VGSS T =25ºC C Drain current ID continuous TC=100ºC Drain current pulsed (note1) IDM Repetitive (note1) EAR Avalanche energy Single pulse (note2) EAS Peak diode recovery dv/dt (note3) dv/dt TC=25ºC Total power dissipation PD Derate above 25ºC Junction temperature TJ Storage temperature TSTG *Drain current limited by maximum junction temperature. (TC= 25ºC , unless otherwise specified) Rating Units TO220 TO220F TO251 TO252 TO262 600 V ±30 V 4.0 4.0* 2.8 A 2.4 2.4* 1.8 A 16 16* 12 A 9.3 5.5 mJ 180 mJ 4.5 V/ns 93 31 55 W 0.74 0.24 0.44 W/ºC +150 ºC -55~+150 ºC 5. Thermal characteristics Parameter Symbol Rating TO220 TO220F TO251 TO252 TO262 62.5 110 Thermal resistance,junction-ambient RthJA Thermal resistance,case-to-sink typ RthJS 0.5 -- 50 Thermal resistance junction-case RthJC 1.35 4.05 2.25 2 of 6 Rev 1.2 Dec 2014 Unit ºC/W KIA 4.0A 600V N-CHANNEL MOSFET 4N60H SEMICONDUCTORS 6. Electrical characteristics Parameter Off characteristics Drain-source breakdown voltage Zero gate voltage drain current (TJ=25°C,unless otherwise notes) Min Typ Max Unit Symbol Conditions BVDSS VGS=0V,ID=250μA VDS=600V ,VGS=0V VDS=480V ,TC=125 ºC VGS=30V,VDS=0V VGS=-30V,VDS=0V 600 - - 1 10 100 -100 V μA μA nA nA IDSS Forward Gate-body leakage current Reverse Breakdown voltage temperature coefficient On characteristics Gate threshold voltage △BvDSS/△TJ ID=250μA - 0.6 - V/ºC VGS(TH) 2.0 - 4.0 V Static drain-source on-resistance RDS(ON) VDS=VGS, ID=250μA VGS=10V, ID=2.0A(TO220,TO262、 TO220F) ID=1.4A(TO251,TO252) - 2.3 2.7 Ω - 500 45 4.5 - pF pF pF - 10 32 32 - ns ns ns - 40 - ns - 13.5 2.2 - nC nC - 5.4 - nC - - 1.4 V - 250 4.0 2.8 16.0 12 - ns - 1.8 - μC Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Switching characteristics Turn-on delay time Rise time Turn-off delay time Fall time IGSS CISS COSS CRSS VDS=25V,VGS=0V, f=1MHz tD(ON) tR tD(OFF) VDD=300V, ID=4.0A(TO220,TO262,TO 220F) ID=2.8A(TO251,TO252) RG=25Ω (note4,5) VDS=480V, ID=4.0A(TO220,TO262,TO 220F) ID=2.8A(TO251,TO252) VGS=10V (note4,5) tF Total gate charge Gate-source charge QG QGS Gate-drain charge QGD Drain-source diode characteristics Drain-source diode forward voltage VSD Continuous drain-source current ISD Pulsed drain-source current ISM Reverse recovery time tRR Reverse recovery charge QRR VGS=0V,ISD=4.0A(TO220,T O262,TO220F) ISD=2.8A(TO251,TO252) TO220,TO262,TO220F TO251,TO252 TO220,TO262,TO220F TO251,TO252 ISD=4.0A(TO220,TO262,T O220F) ISD=2.8A(TO251,TO252) dISD/dt=100A/μs (note 4) Notes: 1. Repetitive rating : pulse width limited by maximum junction temperature 2. L=20mH, IAS=4.0A, VDD=50V, RG=25Ω, starting TJ=25ºC 3. ISD