ES1C

山东晶导微电子股份有限公司 ES1A THRU ES1J Jingdao Microelectronics co.LTD Surface Mount Superfast Recovery Rectifier Reverse Voltage – 50 to 600 V PINNING Forward Current – 1 A PIN FEATURES • For surface mounted applications • Low profile package • Glass Passivated Chip Junction • Superfast reverse recovery time • Lead free in comply with EU RoHS 2011/65/EU directives DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: ES1A~ES1J Simplified outline SMA and symbol MECHANICAL DATA • Case: SMA • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 0.055g / 0.002oz Absolute Maximum Ratings and Characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbols ES1A ES1B ES1C ES1D ES1E ES1G ES1J Units Maximum Repetitive Peak Reverse Voltage V RRM 50 100 150 200 300 400 600 V Maximum RMS voltage V RMS 35 70 105 140 210 280 420 V Maximum DC Blocking Voltage V DC 50 100 150 200 300 400 600 V Maximum Average Forward Rectified Current I F(AV) 1 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) I FSM 30 A Maximum Forward Voltage at 1 A VF Parameter Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta =125 °C Typical Junction Capacitance at V R =4V, f=1MHz Maximum Reverse Recovery Time Typical Thermal Resistance （1） （2） Operating and Storage Temperature Range 1.25 1 1.70 V IR 5 100 μA Cj 15 pF t rr 35 ns RθJA 75 °C/W T j , T stg -55 ~ +150 °C （1）Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A . （2）P.C.B. mounted with 1.0 X 1.0" (2.54 X 2.54 cm) copper pad areas. 2017.04 SMA-E-ES1A~ES1J-1A600V Page 1 of 3 山东晶导微电子股份有限公司 ES1A THRU ES1J Jingdao Microelectronics co.LTD Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 ohm Noninductive 10 ohm Noninductive t rr +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm OSCILLOSCOPE Note 1 NonInductive -1.0 Note：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 300 1.2 1.0 I R - Reverse Current ( μ A) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 0.8 0.6 0.4 0.2 Single phase half wave resistive or inductive 100 T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0.0 25 50 75 100 125 150 175 0 Case Temperature (°C) Junction Capacitance ( pF) Instaneous Forward Current (A) 80 100 30 1.0 ES1A~ES1D ES1E/ES1G 0.1 ES1J 0.01 0.001 0.5 60 Fig.5 Typical Junction Capacitance T J =25°C 0 40 % of PIV.VOLTS Fig.4 Typical Forward Characteristics 10 20 1.0 1.5 2.0 25 20 15 10 T J=25°C f = 1.0MHz V sig = 50mV p-p 05 2.5 Instaneous Forward Voltage (V) 0.1 1 10 100 Reverse Voltage (V) Peak Forward Surage Current (A) Fig.6 Maximum Non-Repetitive Peak Forward Surage Current 35 30 25 20 15 10 05 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles 2017.04 www.sdjingdao.com Page 2 of 3 山东晶导微电子股份有限公司 ES1A THRU ES1J Jingdao Microelectronics co.LTD PACKAGE OUTLINE Plastic surface mounted package; 2 leads A A SMA c a VM e A HE g e E A D E HE c e g max 2.2 4.5 2.7 5.2 0.31 1.6 1.5 min 1.9 4.0 2.3 4.7 0.15 1.3 0.9 max 87 181 106 205 12 63 59 min 75 157 91 185 6 51 35 UNIT mm mil g e A D The recommended mounting pad size a 0.3 12 Marking Type number ES1A 2.4 (94) mm Unit ： (mil) 2017.04 ES1A 1.8 (71) 1.8 (71) 1.8 (71) Marking code JD706144B6 ES1B ES1B ES1C ES1C ES1D ES1D ES1E ES1E ES1G ES1G ES1J ES1J Page 3 of 3