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SD103BW

SD103BW

  • 厂商:

    JINGDAO(晶导微电子)

  • 封装:

    SOD-123

  • 描述:

    SD103BW

  • 数据手册
  • 价格&库存
SD103BW 数据手册
山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD SD103AW THRU SD103CW Schottky Barrier Diode PINNING FEATURES PIN • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection DESCRIPTION 1 Cathode 2 Anode • Negligible Reverse Recovery Time 2 • Low Capacitance 1 MECHANICAL DATA ▪Case: SOD-123 ▪Terminals: Solderable per MIL-STD-750, Method 2026 ▪ Approx. Weight:16mg/0.00056oz Top View Marking Code: S4~S6 Simplified outline SOD-123 and symbol Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Symbols SD103AW SD103BW SD103CW Units Peak Repetitive Reverse Voltage V RRM 40 30 20 V RMS reverse voltage V RMS 28 21 14 V Working Peak Reverse Voltage V DC 40 30 20 V Peak Forward Surge Current, 8.3ms single half sine-wave superimposed on rated load (JEDEC method) I FSM Parameter Maximum Instantaneous Forward Voltage I F =20mA 13 0.37 VF V I F =200mA Power Dissipation 0.60 V R =30V V R =20V IR V R =10V Thermal Resistance, Junction to Ambient Air 5 – – – 5 – – 5 – RθJA 300 V (BR) 30 SD103AW Reverse voltage I R =100uA SD103BW uA °C/W 40 V 20 SD103CW Reverse recovery time mW 400 PD Reverse current A trr 10 ns I FM 350 mA C tot 28 pF Junction temperature Tj 125 ℃ Storage temperature T stg -55 ~ +150 ℃ I F =I R =200mA,Irr=0.1xI R ,R L =100Ω Forward Continuons Current Total capacitance 2018.06 V R =0V.f=1MH Z SOD123-S-SD103AW~SD103CW-200mA40V Page 1 of 3 山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD SD103AW THRU SD103CW Fig.2 Typical Reverse Characteristics Power Dissipation (mW) 600 500 400 300 200 100 0 25 75 50 100 125 150 Instaneous Reverse Current ( μA) Fig.1 Power Derating Curve 1000 T J =100°C 100 10 1 T J =25°C 0.1 Peak Forward Surage Current (A) FORWARD CURRENT IF(mA) T J =100°C T J =25°C 10 400 200 600 800 18 8.3 ms Single Half Sine Wave (JEDEC Method) 12 09 06 03 00 1 1000 10 1 10 20 Transient Thermal Impedance( °C /W) Junction Capacitance ( pF) T J =25°C f=1MHz 1 100 Fig.6 Typical Transient Thermal Impedance 2000 1000 100 10 0.01 Reverse Voltage (V) 2018.06 10 Number of Cycles at 50Hz Fig.5 Typical Junction Capacitance 0 50 15 FORWARD VOLTAGE VF(mV) 100 40 Fig.4 Maximum Non-Repetitive Peak Forward Surage Current 1000 0.1 0 30 Reverse Voltage(v) Fig.3 Forward Characteristics 100 20 10 0 TA, Ambient Temperature (°C) 0.1 1 10 100 t, Pulse Duration(sec) www.sdjingdao.com Page 2 of 3 山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD SD103AW THRU SD103CW PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123 A D b E A1 C ∠ALL ROUND L1 E1 SOD-123 mechanical data A C D E E1 L1 b A1 max 1.3 0.22 1.8 2.8 3.9 0.45 0.7 0.2 min 0.9 0.09 1.5 2.5 3.6 0.25 0.5 max 51 8.7 71 110 154 18 28 min 35 3.5 59 98 142 10 20 UNIT ∠ mm 9° 8 mil The recommended mounting pad size 2.0 (79) 1.2 (47) Type number Marking code SD103AW S4 SD103BW S5 SD103CW S6 1.2 (47) 1.2 (47) Marking Unit: mm (mil) 2018.06 806222A0 Page 3 of 3
SD103BW 价格&库存

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