FCX491

FCX491 NPN-General use transistor 1W 1A 60V 4 Applications：Can be used for switching and amplifying in various electrical and electronic equipments. 2 1 3 SOT-89 Max ratings Parameters Symbol Rating VCEO 60 Unit V Collector–base voltage（IE=0） VCBO 80 V Emitter – base voltage（IC=0） VEBO 5 V IC 1 A Ptot 1 W Max junction temperature Tjm 150 ℃ Storage temperature Tstg -55～150 ℃ Collector–emitter voltage（IB=0） Collector current Total power dissipation (TA=25℃) * * mounted on printed circuit board. Characteristics（Unless otherwise specified，TA=25℃） Parameters symbol Collector–emitter breakdown voltage V(BR)CEO Collector–base breakdown voltage Emitter– base breakdown voltage Test condition min typ max unit IC=1mA，IB=0 60 — — V V(BR)CBO IC=100µA，IE=0 80 V(BR)EBO IE=100µA，IC=0 5 — — V — — V Forward current transfer ratio1) hFE VCE=2V；IC=150mA 100 — 300 — Collector–base cutoff current ICBO VCB=30V，IE=0 — — 100 nA IC=500mA，IB=50mA — — 0.5 V — 130 — MHz Collector–emitter ) voltage1 saturation VCE（sat） IC=10mA，VCE=5V， Transition frequency 1) REV.08 fT f=100MHz pulse method：tw:300µs，duty ratio≤2％. 1 of 2 FCX491 Typical curve Fig.1 DC current gain; typical values. Outline dimensions unit：mm 尺寸 符号 A b b1 b2 c D E e e1 HE L LE α REV.08 2 of 2 min 1.4 0.35 0.4 SOT-89 type max 1.6 0.55 0.65 1.6 0.35 4.4 2.35 0.45 4.6 2.55 1.5 3 4.15 2.7 1.0 5o