PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes
in SOT23
Rev. 02 — 25 August 2009
Product data sheet
1. Product profile
1.1 General description
Low capacitance double bidirectional ElectroStatic Discharge (ESD) protection diodes in a
SOT23 small Surface Mounted Device (SMD) plastic package designed to protect two
signal lines from the damage caused by ESD and other transients.
1.2 Features
n
n
n
n
ESD protection of two lines
Max. peak pulse power: PPP = 350 W
Low clamping voltage: VCL = 26 V
Small SMD plastic package
n
n
n
n
Ultra low leakage current: IRM < 90 nA
ESD protection up to 23 kV
IEC 61000-4-2, level 4 (ESD)
IEC 61000-4-5 (surge); IPP = 15 A
1.3 Applications
n Computers and peripherals
n Audio and video equipment
n Cellular handsets and accessories
n Communication systems
n Portable electronics
n Subscriber Identity Module (SIM) card
protection
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VRWM
reverse standoff voltage
Cd
Min
Typ
Max
Unit
PESD3V3L2BT
-
-
3.3
V
PESD5V0L2BT
-
-
5.0
V
PESD12VL2BT
-
-
12
V
PESD15VL2BT
-
-
15
V
PESD24VL2BT
-
-
24
V
PESD3V3L2BT
-
101
-
pF
PESD5V0L2BT
-
75
-
pF
PESD12VL2BT
-
19
-
pF
PESD15VL2BT
-
16
-
pF
PESD24VL2BT
-
11
-
pF
diode capacitance
Conditions
VR = 0 V;
f = 1 MHz
PESDxL2BT series
Nexperia
Low capacitance double bidirectional ESD protection diodes in SOT23
2. Pinning information
Table 2.
Pinning
Pin
Description
1
cathode 1
2
cathode 2
3
double cathode
Simplified outline
Symbol
3
1
3
1
2
2
006aaa155
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PESD3V3L2BT
-
plastic surface mounted package; 3 leads
SOT23
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
PESD3V3L2BT
V3*
PESD5V0L2BT
V4*
PESD12VL2BT
V5*
PESD15VL2BT
V6*
PESD24VL2BT
V7*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
©
PESDXL2BT_SER_2
Product data sheet
Rev. 02 — 25 August 2009
Nexperia B.V. 2017. All rights reserved
2 of 14
PESDxL2BT series
Nexperia
Low capacitance double bidirectional ESD protection diodes in SOT23
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Min
Max
Unit
PESD3V3L2BT
-
350
W
PESD5V0L2BT
-
350
W
PESD12VL2BT
-
200
W
PESD15VL2BT
-
200
W
-
200
W
PESD3V3L2BT
-
15
A
PESD5V0L2BT
-
13
A
PESD12VL2BT
-
5
A
PESD15VL2BT
-
5
A
PESD24VL2BT
-
3
A
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
PPP
Parameter
Conditions
peak pulse power
tp = 8/20 µs
[1][2]
PESD24VL2BT
peak pulse current
IPP
tp = 8/20 µs
[1][2]
[1]
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2]
Measured from pin 1 to 3 or 2 to 3.
Table 6.
Symbol
VESD
ESD maximum ratings
Parameter
electrostatic discharge
voltage
Conditions
IEC 61000-4-2
(contact discharge)
Min
Max
Unit
-
30
kV
-
23
kV
-
10
kV
[1][2]
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
PESDxL2BT series
HBM MIL-STD883
[1]
Device stressed with ten non-repetitive ESD pulses.
[2]
Measured from pin 1 to 3 or 2 to 3.
Table 7.
ESD standards compliance
ESD Standard
Conditions
IEC 61000-4-2, level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
HBM MIL-STD883, class 3
> 4 kV
©
PESDXL2BT_SER_2
Product data sheet
Rev. 02 — 25 August 2009
Nexperia B.V. 2017. All rights reserved
3 of 14
PESDxL2BT series
Nexperia
Low capacitance double bidirectional ESD protection diodes in SOT23
001aaa631
IPP
001aaa630
120
100 %
90 %
100 % IPP; 8 µs
IPP
(%)
80
e−t
50 % IPP; 20 µs
40
10 %
0
10
20
30
30 ns
40
t (µs)
Fig 1.
t
tr = 0.7 ns to 1 ns
0
60 ns
8/20 µs pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
©
PESDXL2BT_SER_2
Product data sheet
Rev. 02 — 25 August 2009
Nexperia B.V. 2017. All rights reserved
4 of 14
PESDxL2BT series
Nexperia
Low capacitance double bidirectional ESD protection diodes in SOT23
6. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
VRWM
reverse standoff voltage
IRM
VBR
Conditions
Min
Typ
Max
Unit
PESD3V3L2BT
-
-
3.3
V
PESD5V0L2BT
-
-
5.0
V
PESD12VL2BT
-
-
12
V
PESD15VL2BT
-
-
15
V
PESD24VL2BT
-
-
24
V
reverse leakage current
PESD3V3L2BT
VRWM = 3.3 V
-
0.09
2
µA
PESD5V0L2BT
VRWM = 5.0 V
-
0.01
1
µA
PESD12VL2BT
VRWM = 12 V
-
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