BDFN2C151V35
ESD Protection Diode
»Features
■
230Watts peak pulse power (tp = 8/20μs)
■
Bidirectional configurations
■
Solid-state silicon-avalanche technology
■
Low clamping voltage
■
Low leakage current
■
IEC 61000-4-2 ±30kV contact ±30kV air
■
IEC 61000-4-4 (EFT) 40A (5/50ns)
■
IEC 61000-4-5 (Lightning) 6A (8/20μs)
»Applications
»Mechanical Data
■
Microprocessor based equipment
■
DFN1006 package
■
Personal Digital Assistants (PDA’s)
■
Molding compound flammability rating: UL 94V-0
■
Notebooks, Desktops, and Servers
■
Packaging: Tape and Reel
■
Portable Instrumentation
■
RoHS/WEEE Compliant
■
Pagers Peripherals
»Schematic & PIN Configuration
DFN1006
Revision 2018
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BDFN2C151V35
»Absolute Maximum Rating
Rating
Symbol
Value
Units
Peak Pulse Power ( tp =8/20μs)
PPP
230
Watts
Peak Pulse Current ( tp =8/20μs ) (note1)
Ipp
6
A
VESD
30
30
kV
Lead Soldering Temperature
TL
260(10seconds)
℃
Junction Temperature
TJ
-55 to + 150
℃
Storage Temperature
Tstg
-55 to + 150
℃
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
»Electrical Characteristics
Parameter
Symbol
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Conditions
Min
Typical
VRWM
VBR
IT=1mA
Reverse Leakage Current
IR
VRWM=15V,T=25℃
Clamping Voltage
VC
IPP=6A,tp=8/20μs
37
Junction Capacitance
Cj
VR = 0V, f = 1MHz
25
Max
Units
15.0
V
16.7
V
0.5
uA
45
V
pF
»Electrical Parameters (TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
VBR
IT
I
IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
VC VBR VRWM
Breakdown Voltage @ IT
IT
IR
IR
IT
VRWM VBR VC
V
Test Current
IPP
Note:. 8/20μs pulsewaveform.
Revision 2018
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BDFN2C151V35
»Typical Characteristics
Figure 2: Power Derating Curve
10
110
230w8/20 μs waveform
1
0.1
0.01
0.1
1
10
100
Percent of Rated Power for Ipp
Ppp – Peak Pulse Power - Ppp(KW)
Figure 1: Peak Pulse Power vs. Pulse Time
100
90
80
70
60
50
40
30
20
10
0
1,000
td – Pulse Duration - µs
Percent
Ipp
80
80
Clamping Voltage–VC (V)
90
e-1
50
40
td=Ipp/
2
20
75
100
125
150
90
Waveform
Paramters
tr=8µs
td=20µs
100
30
50
Figure 4: Clamping Voltage vs.Ipp
110
60
25
Ambient Temperature - TA (℃)
Figure3: Pulse Waveform
70
0
10
Test
Waveform
Paramters
tr=8µs
td=20µs
70
60
50
40
30
20
10
0
0
5
10
15
Time (µs)
20
25
30
0
0
2
4
6
8
10
12
Peak Pulse Current–IPP (A)
Revision 2018
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BDFN2C151V35
»Outline Drawing – DFN1006
»Marking
LB
»Ordering information
Order code
Package
Base qty
Delivery mode
BDFN2C151V35
DFN1006
10000
Tape and reel
Revision 2018
www.born-tw.com
4/4
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