BML6402

BML6402 MOSFET P-Channel Enhancement-Mode MOSFET ROHS SOT-23 - Features  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance MAXIMUM RANTINGS Characteristic Symbol Max Unit BVDSS VGS -20 +12 V V Drain Current (continuous) ID -3.7 A Drain Current (pulsed) IDM -15 A Total Device Dissipation TA=25℃ PD 1100 mW Drain-Source Voltage Gate- Source Voltage Junction TJ 150 ℃ Storage Temperature Tstg -55to+150 ℃ Electrical Characteristics Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage (ID = -250uA,VGS=0V) BVDSS -20 — — V Gate Threshold Voltage (ID = -250uA,VGS= VDS) VGS(th) -0.4 — -1.2 V VSD — — -1.2 V IDSS — — -1 -25 uA IGSS — — +100 nA RDS(ON) — 50 65 mΩ RDS(ON) — 80 135 mΩ Input Capacitance (VGS=0V, VDS= -10V,f=1MHz) CISS — 600 — pF Output Capacitance (VGS=0V, VDS= -10V,f=1MHz) COSS — 120 — pF t(on) — 8 — ns t(off) — 60 — ns Diode Forward Voltage Drop (IS= -1A,VGS=0V) Zero Gate Voltage Drain Current (VGS=0V, VDS= -20V) (VGS=0V, VDS= -20V, TA=70℃) Gate Body Leakage (VGS=+12V, VDS=0V) Static Drain-Source On-State Resistance (ID= -3.7A,VGS= -4.5V) Static Drain-Source On-State Resistance (ID= -3.1A,VGS= -2.5V) Turn-ON Time (VDS= -10V, ID= -3.7A, RGEN=6Ω) Turn-OFF Time (VDS= -10V, ID= -3.7A, RGEN=6Ω) Rev 8: Nov 2014 www.born-tw.com Page 1 of 2 BML6402 MOSFET P-Channel Enhancement-Mode MOSFET ROHS SOT -23 PACKAGE OUTLINE Plastic surface mounted package SOT-23 (UNIT)：mm Rev 8: Nov 2014 www.born-tw.com Page 2 of 2