SM1A42CSKC-TRG

SM1A42CSK ® Dual Enhancement Mode MOSFET (N-and P-Channel) Features • Pin Description N Channel D1 100V/2.5A, D1 D2 D2 RDS(ON) = 150mΩ (max.) @ VGS = 10V RDS(ON) = 170mΩ (max.) @ VGS = 4.5V • S1 G1 P Channel S2 G2 -100V/-2.2A, Top View of SOP−8 RDS(ON) = 205mΩ (max.) @ VGS =-10V (8) (7) D1 D1 RDS(ON) = 240mΩ (max.) @ VGS =-4.5V • • • • (6) (5) D2 D2 100% UIS + Rg Tested Reliable and Rugged Lead Free Available (RoHS Compliant) (2) G1 ESD Protection (4) G2 Applications • S1 (1) DC Motor Control. N-Channel MOSFET S2 (3) P-Channel MOSFET Ordering and Marking Information Package Code K : SOP-8 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel (2500ea/reel) Assembly Material G : Halogen and Lead Free Device SM1A42CS Assembly Material Handling Code Temperature Range Package Code SM1A42CS K : 1A42CS XXXXX XXXXX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - January, 2015 1 www.sinopowersemi.com SM1A42CSK ® Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter N Channel P Channel Unit Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 TJ TSTG 100 Storage Temperature Range IS Diode Continuous Forward Current ID Continuous Drain Current -100 -55 to 150 IDM a Pulsed Drain Current PD b Maximum Power Dissipation RθJAc Thermal Resistance-Junction to Ambient TA=25°C 2 -1.1 TA=25°C 2.5 -2.2 TA=70°C 2 -1.8 TA=25°C 10 -9 TA=25°C 2.1 2.1 TA=70°C 1.3 1.3 V °C A A A W t ≤ 10s 60 °C/W Steady State 100 °C/W IAS d Avalanche Current, Single pulse L=0.5mH 5 -9 A EAS d Avalanche Energy, Single pulse L=0.5mH 6.25 20 mJ Note a：Pulse width limited by max. junction temperature. Note b：t < 10sec. Note c：RθJA steady state t=999s. R θJA is measured with the device mounted on 1in2 , FR-4 board with 2oz. Copper. Note d：UIS tested and pulse wid th limited by maximum junction temperature 150o C (initial temperature Tj=25o C). Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - January, 2015 2 www.sinopowersemi.com SM1A42CSK ® N Channel Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Conditions N Channel Min. Typ. Max. 100 - - - - 1 - - 30 Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) I GSS VGS=0V, IDS=250µA VDS=80V, VGS=0V TJ=85°C V µA Gate Threshold Voltage VDS=VGS, IDS=250µA 1 2 3 V Gate Leakage Current VGS=±20V, V DS=0V - - ±10 uA VGS=10V, I DS=2.5A - 125 150 mΩ VGS=4.5V, IDS=2A - 130 170 mΩ ISD=2A, VGS=0V - 0.8 1.3 V - 23 - ns - 26 - nC - 2.5 5 Ω - 460 600 - 29 - - 17 - - 7 13 - 8 15 - 16 29 - 3 6 - 5 - - 10 14 - 1.7 - - 2.3 - RDS(ON) e Drain-Source On-state Resistance Diode Characteristics VSD e Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Dynamic Characteristics f RG Gate Resistance C iss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time t d(OFF) Turn-off Delay Time tf ISD=2.5A, dlSD /dt=100A/µs VGS=0V,V DS=0V,f=1MHz VGS=0V, VDS=30V, Frequency=1.0MHz VDD=30V, R L=30Ω, IDS=1A, VGEN =10V, RG=6Ω Turn-off Fall Time Gate Charge Characteristics Qg Total Gate Charge Qg Total Gate Charge pF ns f Qgs Gate-Source Charge Q gd Gate-Drain Charge VDS=50V, VGS=4.5V, IDS=2.5A VDS=50V, VGS=10V, IDS=2.5A nC Note e：Pulse test ; pulse width≤300µs, duty cycle≤2%. Note f：Guaranteed by design, not subject to production testing. Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - January, 2015 3 www.sinopowersemi.com SM1A42CSK ® P Channel Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Conditions P Channel Min. Typ. Max. -100 - - - - -1 - - -30 Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) I GSS VGS=0V, IDS=-250µA VDS=-80V, VGS=0V TJ=85°C V µA Gate Threshold Voltage VDS=VGS, IDS=-250µA -1 -2 -3 V Gate Leakage Current VGS=±20V, V DS=0V - - ±10 uA VGS=-10V, IDS =-2.2A - 163 205 mΩ 177 240 mΩ RDS(ON) e Drain-Source On-state Resistance VGS=-4.5V, IDS=-1.6A Diode Characteristics VSD e Diode Forward Voltage ISD=-1A, VGS=0V - -0.75 -1 V trr Reverse Recovery Time - 26 - ns Qrr Reverse Recovery Charge ISD=-2.2A, dlSD/dt=100A/µs - 30 - nC VGS=0V,V DS=0V,f=1MHz - 10 20 Ω - 700 910 - 45 - - 27 - - 8 14 - 5 9 - 38 68 - 32 58 - 8 - - 17 24 - 2.3 - - 3.7 - Dynamic Characteristics f RG Gate Resistance C iss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time t d(OFF) Turn-off Delay Time tf VGS=0V, VDS=-30V, Frequency=1.0MHz VDD=-30V, RL =30Ω, IDS=-1A, VGEN=-10V, RG=6Ω Turn-off Fall Time Gate Charge Characteristics Qg Total Gate Charge Qg Total Gate Charge pF ns f Qgs Gate-Source Charge Q gd Gate-Drain Charge VDS=-50V, VGS=-4.5V, IDS=-2.2A VDS=-50V, VGS=-10V, IDS=-2.2A nC Note e：Pulse test ; pulse width≤300µs, duty cycle≤2%. Note f：Guaranteed by design, not subject to production testing. Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - January, 2015 4 www.sinopowersemi.com SM1A42CSK ® N Channel Typical Operating Characteristics Drain Current 2.4 3.0 2.0 2.5 ID - Drain Current (A) Ptot - Power (W) Power Dissipation 1.6 1.2 0.8 2.0 1.5 1.0 0.5 0.4 o o TA=25 C 0.0 0.0 0 20 40 60 80 100 120 140 160 TA=25 C,VG=10V 0 20 Tj - Junction Temperature (°C) Normalized Transient Thermal Resistance )L on Rd s( ID - Drain Current (A) im it 10 300µs 1ms 0.1 10ms o 0.01 0.1 DC 1 10 80 100 120 140 160 Thermal Transient Impedance 30 TA=25 C 60 Tj - Junction Temperature (°C) Safe Operation Area 1 40 1s 100ms 100 Duty = 0.5 1 0.2 0.1 0.05 0.02 0.1 0.01 Single Pulse 0.01 2 0.005 1E-4 500 Mounted on 1in pad o RθJA : 60 C/W 1E-3 0.01 0.1 1 10 60 Square Wave Pulse Duration (sec) VDS - Drain - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - January, 2015 2 5 www.sinopowersemi.com SM1A42CSK ® N Channel Typical Operating Characteristics (Cont.) Drain-Source On Resistance Output Characteristics 10 240 VGS=4,5,6,7,8,9,10V RDS(ON) - On - Resistance (mΩ) 210 ID - Drain Current (A) 8 3.5V 6 4 3V 2 0 0 1 2 3 4 5 180 150 VGS=4.5V 120 VGS=10V 90 60 30 6 0 2 4 6 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 400 1.6 Normalized Threshold Vlotage RDS(ON) - On - Resistance (mΩ) 350 300 250 200 150 100 2 3 4 5 6 7 8 9 1.2 1.0 0.8 0.6 0.4 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) VGS - Gate - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - January, 2015 1.4 0.2 -50 -25 10 10 IDS=250µA IDS=2.5A 50 8 6 www.sinopowersemi.com SM1A42CSK ® N Channel Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 3.0 10 VGS = 10V IS - Source Current (A) Normalized On Resistance IDS = 2.5A 2.5 2.0 1.5 1.0 o Tj=150 C 1 o Tj=25 C 0.5 o RON@Tj=25 C: 125mΩ 0.0 -50 -25 0 25 50 75 0.1 0.0 100 125 150 0.4 0.6 0.8 1.0 1.2 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance Gate Charge 700 VDS=30V 9 I =2.5A DS VGS - Gate-source Voltage (V) 600 500 1.4 10 Frequency=1MHz C - Capacitance (pF) 0.2 Ciss 400 300 200 8 7 6 5 4 3 2 100 0 0 8 1 Coss Crss 16 24 32 0 0 40 4 6 8 10 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - January, 2015 2 7 www.sinopowersemi.com SM1A42CSK ® P Channel Typical Operating Characteristics Drain Current 2.4 2.0 2.0 -ID - Drain Current (A) Ptot - Power (W) Power Dissipation 2.4 1.6 1.2 0.8 0.4 1.6 1.2 0.8 0.4 o o 0.0 TA=25 C 0 20 40 60 0.0 80 100 120 140 160 TA=25 C,VG=-10V 0 20 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 2 Normalized Transient Thermal Resistance 30 Rd s( on )L im it 10 -ID - Drain Current (A) 40 300µs 1 1ms 10ms 0.1 100ms o TA=25 C 0.01 0.1 DC 1 10 1s 100 0.2 0.1 0.05 0.1 0.02 0.01 0.01 Single Pulse 0.005 1E-4 500 -VDS - Drain - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - January, 2015 Duty = 0.5 1 1E-3 0.01 2 Mounted on 1in pad o RθJA : 60 C/W 0.1 1 10 60 Square Wave Pulse Duration (sec) 8 www.sinopowersemi.com SM1A42CSK ® P Channel Typical Operating Characteristics (Cont.) Drain-Source On Resistance Output Characteristics 9 320 VGS=-3.5,-4,-5,-6, -7,-8,-9,-10V 280 RDS(ON) - On - Resistance (mΩ) 8 -ID - Drain Current (A) 7 6 5 4 -3V 3 2 1 240 200 VGS=-4.5V 160 VGS=-10V 120 80 -2.5V 0 0 1 2 3 4 5 40 0.0 6 1.5 3.0 4.5 -ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 1.6 9.0 IDS=-250µA IDS=-2.2A 1.4 400 Normalized Threshold Vlotage RDS(ON) - On - Resistance (mΩ) 7.5 -VDS - Drain - Source Voltage (V) 450 350 300 250 200 1.2 1.0 0.8 0.6 0.4 150 100 6.0 2 3 4 5 6 7 8 9 0.2 -50 -25 10 25 50 75 100 125 150 Tj - Junction Temperature (°C) -VGS - Gate - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - January, 2015 0 9 www.sinopowersemi.com SM1A42CSK ® P Channel Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 3.0 10 VGS = -10V IDS = -2.2A -IS - Source Current (A) Normalized On Resistance 2.5 2.0 1.5 1.0 o Tj=150 C o 1 Tj=25 C 0.5 o RON@Tj=25 C: 163mΩ 0.0 -50 -25 0 25 50 0.1 0.0 75 100 125 150 Tj - Junction Temperature (°C) 0.2 0.4 800 8 C - Capacitance (pF) -VGS - Gate-source Voltage (V) 9 Ciss 600 500 400 300 200 0 Crss 0 8 1.4 VDS=-50V IDS=-2.2A 7 6 5 4 3 2 1 Coss 16 1.2 Gate Charge Frequency=1MHz 100 1.0 10 900 700 0.8 -VSD - Source - Drain Voltage (V) Capacitance 1000 0.6 24 32 0 40 3 6 9 12 15 18 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - January, 2015 0 10 www.sinopowersemi.com SM1A42CSK ® Avalanche Test Circuit and Waveforms N Channel VDS L tp VDSX(SUS) DUT VDS IAS RG VDD VDD IL tp EAS 0.01Ω tAV P Channel VDS tAV L DUT EAS VDD RG VDD IAS tp IL VDS 0.01Ω tp VDSX(SUS) Switching Time Test Circuit and Waveforms N Channel VDS RD VDS DUT 90% VGS RG VDD 10% VGS tp td(on) tr P Channel td(off) tf VDS RD td(on) tr DUT td(off) tf VGS 10% VGS RG VDD tp 90% VDS Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - January, 2015 11 www.sinopowersemi.com SM1A42CSK ® Package Information SOP-8 -T- SEATING PLANE < 4 mils D E E1 SEE VIEW A h X 45 ° A A2 c 0.25 b e A1 GAUGE PLANE SEATING PLANE L VIEW A S Y M B O L A RECOMMENDED LAND PATTERN 1.27 SOP-8 MILLIMETERS MAX. 1.75 MIN. - - MAX. 0.069 A1 0.10 0.25 0.004 0.010 A2 1.25 - 0.049 - b 0.31 0.51 0.012 0.020 c 0.17 0.25 0.007 0.010 4.80 5.00 0.189 0.197 5.80 6.20 0.228 0.244 3.80 4.00 0.150 0.157 D E E1 MIN. INCHES e 1.27 BSC 2.2 5.74 2.87 0.050 BSC h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.050 0 0° 8° 0° 8° Note: 1. Follow JEDEC MS-012 AA. 2. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension “E” does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed 10 mil per side. Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - January, 2015 12 0.8 0.635 UNIT: mm www.sinopowersemi.com SM1A42CSK ® Carrier Tape & Reel Dimensions P0 P2 P1 A B0 W F E1 OD0 K0 A0 A OD1 B B T SECTION A-A SECTION B-B H A d T1 Application A 330.0± 2.00 H T1 C d D W E1 F 12.4+2.00 13.0+0.50 50 MIN. -0.00 -0.20 1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.05 SOP-8 P0 P1 P2 4.0±0.10 8.0±0.10 2.0±0.05 D0 1.5+0.10 -0.00 D1 1.5 MIN. T A0 B0 K0 0.6+0.00 6.40±0.20 5.20±0.20 2.10±0.20 -0.40 (mm) Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - January, 2015 13 www.sinopowersemi.com SM1A42CSK ® Taping Direction Information SOP-8 USER DIRECTION OF FEED Classification Profile Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - January, 2015 14 www.sinopowersemi.com SM1A42CSK ® Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - January, 2015 15 www.sinopowersemi.com SM1A42CSK ® Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 60-150 seconds 217 °C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5°C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time 25°C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Package Thickness Volume mm 3