TSB772CK C0G

TSB772CK Taiwan Semiconductor Low VCESAT PNP Transistor FEATURES ● ● ● ● ● KEY PERFORMANCE PARAMETERS Low VCE(SAT) -0.3 @ IC =-2A, IB = -200mA (Typ.) Complementary part with TSD882 Epitaxial Planar Type Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC. Halogen-free according to IEC 61249-2-21 ● Low Speed Switching Applications UNIT BVCEO -30 V BVCBO -50 V IC -3 A -0.5 V IC= -2A, IB= -200mA en de d Power Supply VALUE VCE(SAT) APPLICATION ● PARAMETER mm TO-126 PARAMETER Collector-Base Voltage Collector-Emitter Voltage tR Emitter-Base Voltage eco ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) SYMBOL LIMIT UNIT VCBO -50 V VCEO -30 V VEBO -5 V DC Collector Current IC Pulse o No Collector Power Dissipation -3 A -7 (note) 1 TA = 25 C PD o TC = 25 C Operating Junction Temperature +150 o TSTG - 55 to +150 o SYMBOL LIMIT RӨJC 6.25 TJ Operating Junction and Storage Temperature Range W 10 C C Note: Single pulse, Pw≤350µs, Duty≤2% THERMAL PERFORMANCE PARAMETER Junction to Case Thermal Resistance 1 UNIT o C/W Version: G1609 TSB772CK Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT IC = -50µA, IE = 0 BVCBO -50 -- -- V Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0 BVCEO -30 -- -- V Emitter-Base Breakdown Voltage IE = -50µA, IC = 0 BVEBO -5 -- -- V Collector Cutoff Current VCB = -30V, IE = 0 ICBO -- -- -1 µA Emitter Cutoff Current VEB = -33V, IC = 0 IEBO -- -- -1 µA Collector-Emitter Saturation Voltage IC = -2A, IB= -200mA *VCE(SAT) -- -0.3 -0.5 V Base-Emitter Saturation Voltage IC = -2A, IB= -200mA *VBE(SAT) -- -1 -2 V DC Current Transfer Ratio VCE = -2V, IC = -1A 100 -- 500 VCE =-5V, IC=-100mA, Transition Frequency f=100MHz VCB = -10V, f=1MHz Collector Cutoff Current VCB = -30V, IE = 0 -- 80 -- MHz Cob -- 55 -- pF ICBO -- -- -1 µA mm * Pulse Test: Pulse Width ≤380µS, Duty Cycle≤2% ORDERING INFORMATION fT en Output Capacitance de *hFE d Collector-Base Breakdown Voltage PACKAGE PACKING TSB772CK B0G TO-126 250pcs / Bulk Bag TSB772CK C0G TO-126 50pcs / Tube No tR e co PART NO. 2 Version: G1609 TSB772CK Taiwan Semiconductor ELECTRICAL CHARACTERICS CURVES (TA=25oC, unless otherwise noted) Figure 2. VCE(SAT) vs. Collector Current en de d Figure 1. DC Current Gain Figure 4. Power Derating Curve No tR e co mm Figure 3. VBE(SAT) vs. Collector Current 3 Version: G1609 TSB772CK Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) MARKING DIAGRAM mm en de d TO-126 No tR e co Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug Y =Nov Z =Dec W =Sep X =Oct L = Lot Code 4 Version: G1609 TSB772CK No tR e co mm en de d Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5 Version: G1609