ESD5311XZ-2/TR

ESD5311XZ ESD5311XZ 1-Line, Bi-directional, Ultra-low Capacitance http//:www.sh-willsemi.com Transient Voltage Suppressor Descriptions The ESD5311XZ is an ultra-low capacitance TVS (Transient Voltage Suppressor) designed to protect high speed data interfaces. It has been specifically designed to protect sensitive electronic components which are connected to data FBP0603-2L (Bottom View) and transmission lines from over-stress caused by ESD (Electrostatic Discharge). The ESD5311XZ incorporates one pair of ultra-low capacitance steering diodes plus a TVS diode. The ESD5311XZ may be used to provide ESD protection up to ±20kV (contact discharge) according to IEC61000-4-2, and withstand peak pulse current up to 4A (8/20μs) according to IEC61000-4-5. The ESD5311XZ is available in FBP0603-2L package. Standard products are Pb-free and Halogen-free. Pin configuration Features  Stand-off voltage: 5V Max.  Transient protection for each line according to Pin1 Pin2 IEC61000-4-2 (ESD): ±20kV (contact discharge) IEC61000-4-4 (EFT): 40A (5/50ns) IEC61000-4-5 (surge): 4A (8/20μs) D = Device code  Ultra-low capacitance: CJ = 0.25pF typ. * = Month code  Ultra-low leakage current: IR < 1nA typ.  Low clamping voltage: VCL = 21V typ. @ IPP = 16A (TLP)  Small package Marking (Top View) Applications  USB 2.0 and USB 3.0  HDMI 1.3 and HDMI 1.4  SATA and eSATA  DVI  IEEE 1394  PCI Express  Portable Electronics  Notebooks Will Semiconductor Ltd. Order information Device Package Shipping ESD5311XZ-2/TR FBP0603-2L 10000/Tape&Reel 1 Revision 1.0, 2016/10/18 ESD5311XZ Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 84 W Peak pulse current (tp = 8/20μs) IPP 4 A ESD according to IEC61000-4-2 air discharge ±20 VESD ESD according to IEC61000-4-2 contact discharge Junction temperature TJ Operating temperature TOP Lead temperature TL Storage temperature kV ±20 TSTG 125 o -40~85 o 260 o -55~150 o C C C C Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Reverse maximum working voltage VRWM Reverse leakage current Reverse breakdown voltage Clamping voltage 1) Dynamic resistance 1) IR IT = 1mA VCL IPP = 16A, tp = 100ns RDYN 2) VCL Clamping voltage 3) VCL CJ Min. VRWM = 5V VBR Clamping voltage Junction capacitance Condition VESD = 8kV 7.5 Typ. Max. Unit 5.0 V