C30641GH

Datasheet Photon Detection C30619, C30641, C30642, C30665 and C30723 Series Large Area InGaAs PIN Photodiodes Excelitas’ Large Area PIN Diodes are highly sensitive, low capacitance InGaAs diodes that provide high responsivity from 800 nm to 1700 nm. An ultra-low capacitance version for high bandwidth applications is available upon request. Key Features  Ultra-low capacitance option  High responsivity at 1300 nm and 1550 nm  Active Area diameter from 0.5 mm to 5 mm  High linearity over large dynamic range  Available in various, robust TO packages  Customizations (e.g. TEC attachment) possible  RoHS compliant Applications  Optical Power Meter  Fiber Optic Test Communication  Near-IR spectroscopy  Laser profiling stations  Instrumentation  LiDAR All specifications are referring to an ambient temperature of T A = 22 °C, λ = 1550 nm and typical VOP. Table 1: Key parameters Parameter Operating Voltage1 Spectral Range Peak Responsivity Responsivity Symbol VOP  peak R850 R1300 R1550 Min 0 800 0.10 0.80 0.95 Typ 5 1550 0.20 0.90 1.05 Max VBD - 5 V 1700 Unit V nm nm A/W Note 1: The depletion voltage can be substantial higher. To find the best operation point, refer to Figure 8 or contact our experts at Excelitas Technologies. www.excelitas.com C30619_641_642_665_723_revision 2021-05 Page 1 of 11 C30619, C30641, C30642, C30665 and C30723 Series Large Area InGaAs PIN Photodiodes Table 2: Ordering Information Parameter C30619GH C30641GH C30642GH C30665GH C30723GH Active Area Shape Circular 2 2 Useful Area 0.2 mm 0.8 mm 3.1 mm2 7.0 mm2 19.6 mm2 Useful Diameter 0.5 mm 1.0 mm 2.0 mm 3.0 mm 5.0 mm Ultra-low C30619GH-LC C30641GH-LC C30642GH-LC C30665GH-LC capacitance Single Stage TEC1,3 C30619GH-TC C30641GH-TC C30642GH-TC C30665GH-TC Double Stage TEC2,3 C30619GH-DTC C30641GH-DTC C30642GH-DTC C30665GH-DTC Package Type TO-18 TO-5 TO-8 -TC / -DTC Package TO-66 flange outline Window Type Flat Glass Note 1: The single stage TEC cools the diode chip to typically 0 °C. Note 2: The double stage TEC cools the diode chip to typically -20 °C. Note 3: Adding a TEC to the PIN diode will significantly reduce dark current, dark noise and NEP. Only available upon special request. Contact our experts at Excelitas for further information. Table 3: Absolute Maximum Ratings Parameter Average Forward Current Total Power dissipation Average Photocurrent Storage Temperature Operating Temperature Soldering Temperature3 Symbol IF Ptot IP TS TOp TP Value 10 100 100 -60 … 125 -40 … 85 260 Units mA mW mA °C °C °C Note 1: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. Note 2: Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note 3: 5 seconds, leads only www.excelitas.com Page 2 of 11 C30619_641_642_665_723_revision 2021-05 C30619, C30641, C30642, C30665 and C30723 Series Large Area InGaAs PIN Photodiodes Table 4: Optical Specifications Parameter Symbol Rise Time / Fall Time1 t r / tf Bandwidth f3dB Note 1: As estimated by 𝒕𝒓/𝒇 = Device C30619GH C30619GH-LC C30641GH C30641GH-LC C30642GH C30642GH-LC C30665GH C30665GH-LC C30723GH C30619GH C30619GH-LC C30641GH C30641GH-LC C30642GH C30642GH-LC C30665GH C30665GH-LC C30723GH Minimum Typical Maximum Units 1 0.5 5 2 17 ns 9 35 17 117 350 700 75 150 20 MHz 40 10 20 3 𝟎.𝟑𝟓 𝒇𝟑𝒅𝑩 The following notes apply for all electrical specifications: Note 1: Dark current measurements are done at VOP = 5 V on C30619GH, C30641GH, C30642GH and C30665GH. On the C30723GH VOP = 1 V. Note 2: Due to the natural fluctuations of charge carriers the PIN diode will also generate noise when not illuminated. Since the noise characteristics and hence the signal-to-noise ratio (SNR) are dependant on the bandwidth (f3dB) and operating wavelength (λ) inside the final system the illuminated noise 𝑖 = 2𝑞𝑓 (𝑖 + 𝑅(𝜆)𝑃) needs to be considered. Hence the SNR is defined as 𝑖 (𝑃𝑅(𝜆)) 𝑆𝑁𝑅 = = 𝑖 𝑖 with q the charge carrier and P the incident optical power in W. 𝒊 Note 3: The NEP is specified in dark conditions ad defined as 𝑵𝑬𝑷 = 𝑵 𝑹(𝝀) Note 4: Measured at VOP = 10 mV. Selected devices with higher shunt resistance are available to special order. Contact our experts at Excelitas. www.excelitas.com Page 3 of 11 C30619_641_642_665_723_revision 2021-05 C30619, C30641, C30642, C30665 and C30723 Series Large Area InGaAs PIN Photodiodes Table 5: Electrical Specification C30619GH, C30619GH-LC, C30619GH-TC/(-DTC) Parameter Symbol Minimum Typical Maximum Breakdown Voltage VBD 20 C0V 15 Capacitance, standard version C5V 7 C25V 6 C0V,LC 15 Capacitance, ultra-low option C5V,LC 5 C25V, LC 2 Dark Current1 iD 0.3 20 2 Dark Noise iN 0.02 0.10 NEP850 100 3 Noise Equivalent Power NEP1300 22 NEP1550 19 4 Shunt Resistance RS 10 Table 6: Electrical Specification C30641GH, C30641GH-LC, C30641GH-TC/(-DTC) Parameter Symbol Minimum Typical Maximum Breakdown Voltage VBD 20 C0V 60 Capacitance, standard version C5V 22 C25V 20 C0V,LC 60 Capacitance, ultra-low option C5V,LC 18 C25V, LC 9 1 Dark Current iD 1 50 2 Dark Noise iN 0.04 0.15 NEP850 200 Noise Equivalent Power3 NEP1300 44 NEP1550 38 4 Shunt Resistance RS 5 www.excelitas.com Page 4 of 11 Units V pF nA pA/√Hz fW/√Hz MΩ Units V pF nA pA/√Hz fW/√Hz MΩ C30619_641_642_665_723_revision 2021-05 C30619, C30641, C30642, C30665 and C30723 Series Large Area InGaAs PIN Photodiodes Table 7: Electrical Specification C30642GH, C30642GH-LC, C30642GH-TC/(-DTC) Parameter Symbol Minimum Typical Breakdown Voltage VBD 15 C0V 400 Capacitance, standard version C5V 90 C25V 75 C0V,LC 300 Capacitance, ultra-low option C5V,LC 77 C25V, LC 36 Dark Current1 iD 2 2 Dark Noise iN 0.03 NEP850 150 3 Noise Equivalent Power NEP1300 33 NEP1550 29 4 Shunt Resistance RS 2 Table 8: Electrical Specification C30665GH, C30665GH-LC, C30665GH-TC/(-DTC) Parameter Symbol Minimum Typical Breakdown Voltage VBD 10 C0V 530 Capacitance, standard version C5V 200 C25V 170 C0V,LC 530 Capacitance, ultra-low option C5V,LC 165 C25V, LC 77 1 Dark Current iD 5 2 Dark Noise iN 0.04 NEP850 200 Noise Equivalent Power3 NEP1300 44 NEP1550 38 4 Shunt Resistance RS 1 Table 9: Electrical Specification C30723GH Parameter Symbol Breakdown Voltage VBD Capacitance C2V Dark Current1 iD 4 Shunt Resistance RS www.excelitas.com Minimum 10 Page 5 of 11 Typical 950 20 1 Maximum Units V pF 0.15 nA pA/√Hz fW/√Hz MΩ Maximum Units V pF 0.20 nA pA/√Hz fW/√Hz MΩ Maximum Units V pF nA MΩ C30619_641_642_665_723_revision 2021-05 C30619, C30641, C30642, C30665 and C30723 Series Large Area InGaAs PIN Photodiodes Table 9: Mechanical Dimensions Figure 1: C30619GH Figure 2: C30641GH www.excelitas.com Page 6 of 11 C30619_641_642_665_723_revision 2021-05 C30619, C30641, C30642, C30665 and C30723 Series Large Area InGaAs PIN Photodiodes as Figure 3: C30642GH Figure 4: C30665GH www.excelitas.com Page 7 of 11 C30619_641_642_665_723_revision 2021-05 C30619, C30641, C30642, C30665 and C30723 Series Large Area InGaAs PIN Photodiodes a Figure 5: C30723GH as Figure 6: -TC / -DTC Package www.excelitas.com Page 8 of 11 C30619_641_642_665_723_revision 2021-05 C30619, C30641, C30642, C30665 and C30723 Series Large Area InGaAs PIN Photodiodes Figure 7: Typical Quantum Efficiency and Typical Responsivity vs. Wavelength Figure 8: Typical Dark Current vs. Temperature Figure 9: Typical Capacitance vs. Bias Voltage www.excelitas.com Page 9 of 11 C30619_641_642_665_723_revision 2021-05 C30619, C30641, C30642, C30665 and C30723 Series Large Area InGaAs PIN Photodiodes Information Excelitas Technologies’ Large Area PIN Photodiodes type C30619GH, C30641GH, C30642GH, C30665GH and C30723GH are high responsive, low capacitance InGaAs detectors. They are specially designed for measurement applications as optical power meters, fiber optic test equipment, near IR-spectroscopy and instrumentation. Their planar passivated structure feature low capacitance for extended bandwidth and a high shunt resistance for maximum sensitivity. Typical devices feature well than 1% non-linearity to optical powers of greater than +13dBm (20 mW) and uniformity within 2% across the detector active area. Typical responsivity of 0.2 A/W at 850 nm for our large area InGaAs devices allows use of a single detector in fiber optic test instrumentation designed to operate at 850 nm, 1300 nm and 1550 nm. Optional ultra-low capacitance devices are available (-LC option). They feature only half of the standard type capacitance, therefore exhibiting twice the 3 dB bandwidth. Devices are available with active areas from 0.5 mm to 5.0 mm in hermetic TO packages. Recognizing that different applications have different performance requirements, Excelitas offers a wide range of customization of these photodiodes to meet your design challenges. Responsivity and noise screening, custom device testing, TEC cooled devices and incorporating band pass filters are among many of the application-specific solutions available. Testing methods Excelitas verifies the electro optical specifications on every device. Visual inspection during fabrication is performed as per our quality standard and failed devices are removed. Excelitas Technologies is certified to meet ISO-9001 and the photodiode are designed to meet MIL-STD-883 and/or MIL-STD-750 specifications. Packaging and shipping All Large Area InGaAs PIN Diodes are shipped in ESD safe plastic trays. Storage and handling Excelitas highly recommends to follow the below notes: - Keep devices in an ESD controlled environment until final assembly. - Keep package trays closed until final assembly. - Remove Devices from their trays by using a vacuum pick-up tool (if applicable) - If a manual picking method is necessary, use a vacuum pick or non-metallic tweezer. - Do not make contact to the window surface. www.excelitas.com Page 10 of 11 C30619_641_642_665_723_revision 2021-05 C30619, C30641, C30642, C30665 and C30723 Series Large Area InGaAs PIN Photodiodes RoHS Compliance This series of APD diodes are designed and built to be fully compliant with the European Union Directive on restrictions of the use of certain hazardous substances in electrical and electronic equipment. Warranty A standard 12-month warranty following shipment applies. Any warranty is null and void if the photodiode window has been opened. About Excelitas Technologies Excelitas Technologies is a global technology leader focused on delivering innovative, customized solutions to meet the lighting, detection and other high-performance technology needs of OEM customers. Excelitas has a long and rich history of serving our OEM customer base with optoelectronic sensors and modules for more than 45 years beginning with PerkinElmer, EG&G, and RCA. The constant throughout has been our innovation and commitment to delivering the highest quality solutions to our customers worldwide. From aerospace and defense to analytical instrumentation, clinical diagnostics, medical, industrial, and safety and security applications, Excelitas Technologies is committed to enabling our customers' success in their specialty end-markets. Excelitas Technologies has approximately 7,000 employees in North America, Europe and Asia, serving customers across the world. Excelitas Technologies 22001 Dumberry Road Vaudreuil-Dorion, Quebec Canada J7V 8P7 Telephone: (+1) 450.424.3300 Toll-free: (+1) 800.775.6786 Fax: (+1) 450.424.3345 Excelitas Technologies GmbH & Co. KG Wenzel-Jaksch-Str. 31 D-65199 Wiesbaden Germany Telephone: (+49) 611 492 430 Fax: (+49) 611 492 165 Excelitas Technologies Singapore, Pte. Ltd. 8 Tractor Road Singapore 627969 Telephone: (+65) 6775 2022 (Main number) Telephone: (+65) 6770 4366 (Customer Service) Fax: (+65) 6778-1752 Contact us at http://www.excelitas.com/contact For a complete listing of our global offices, visit www.excelitas.com/locations © 2021 Excelitas Technologies Corp. All rights reserved. The Excelitas logo and design are registered trademarks of Excelitas Technologies Corp. All other trademarks not owned by Excelitas Technologies or its subsidiaries that are depicted herein are the property of their respective owners. Excelitas reserves the right to change this document at any time without notice and disclaims liability for editorial, pictorial or typographical errors. www.excelitas.com Page 11 of 11 C30619_641_642_665_723_revision 2021-05