FDS4465-NL&-9

FDS4465-NL&-9 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.011 at VGS = - 10 V - 13.5 0.015 at VGS = - 4.5 V - 11.6 VDS (V) - 30 • • • • Qg (Typ.) 29.5 nC Halogen-free TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT APPLICATIONS • Load Switch • Notebook Adaptor Switch SO-8 S S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit - 30 ± 20 ID Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD - 2.2a, b - 20 20 5.0 3.2 2.7a, b 1.7a, b - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range V - 13.5 - 11.9 - 10.9a, b - 8.6a, b - 50 - 4.1 IDM Pulsed Drain Current Unit A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 85 °C/W. d. Based on TC = 25 °C. E-mail：China@VBsemi TEL:86-755-83251052 t ≤ 10 s Steady State Symbol RthJA RthJF Typical 38 20 Maximum 46 25 Unit °C/W FDS4465-NL&-9 www.VBsemi.tw SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ V - 34 mV/ °C VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 25 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C -5 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Forward Transconductancea gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time VDS ≥ - 10 V, VGS = - 10 V VGS = - 10 V, ID = - 10 A tr - 30 0.015 VDS = - 10 V, ID = - 10 A 28 Ω S 2550 VDS = - 15 V, VGS = 0 V, f = 1 MHz 455 pF 390 VDS = - 15 V, VGS = - 10 V, ID = - 10 A VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A 57 86 29.5 45 8 VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 0.5 2.2 4.4 13 25 12 24 70 tf 9 18 td(on) 48 80 92 160 tr nC 22 f = 1 MHz 40 td(off) µA A 0.011 VGS = - 4.5 V, ID = - 8 A td(on) td(off) 5.3 - 1.4 VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω tf 34 60 19 35 Ω ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 4.1 - 60 IS = - 3 A, VGS = 0 V IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.75 - 1.2 V 27 45 ns 16 27 nC 12 15 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. E-mail：China@VBsemi TEL:86-755-83251052 FDS4465-NL&-9 www.VBsemi.tw TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 10 8 VGS = 10 thru 4 V I D - Drain Current (A) I D - Drain Current (A) 48 36 24 12 6 TC = 125 °C 4 TC = 25 °C 2 TC = - 55 °C VGS = 3 V VGS = 2 V 0 0.0 0.5 1.0 1.5 2.0 0 2.5 0 1 VDS - Drain-to-Source Voltage (V) 2 3 4 5 20 25 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.030 4000 0.025 3200 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Ciss VGS = 4.5 V 0.020 0.015 VGS = 10 V 0.010 2400 1600 Coss 800 Crss 0.005 0 0 10 20 30 40 50 60 0 10 15 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.6 VDS = 10 V ID = 10 A 8 1.4 VDS = 15 V 6 4 VDS = 20 V 2 0 0 12 24 36 Qg - Total Gate Charge (nC) Gate Charge E-mail：China@VBsemi TEL:86-755-83251052 VGS = - 4.5 V ID = - 10 A R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 5 48 60 VGS = - 10 V 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 150 FDS4465-NL&-9 www.VBsemi.tw TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.10 100 ID = 10 A TJ = 150 °C 0.08 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 25 °C 1 0.1 0.01 0.06 0.04 TJ = 125 °C 0.02 TJ = 25 °C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.8 170 ID = 250 µA 136 0.4 Power (W) V GS(th) Variance (V) 0.6 ID = 5 mA 0.2 102 68 0.0 34 - 0.2 - 0.4 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 TJ - Temperature (°C) 100 Limited by RDS(on)* 10 I D - Drain Current (A) 1 Single Pulse Power, Junction-to-Ambient Threshold Voltage 1 ms 10 ms 1 100 ms 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area E-mail：China@VBsemi TEL:86-755-83251052 0.1 Time (s) 100 10 FDS4465-NL&-9 www.VBsemi.tw MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 17.0 ID - Drain Current (A) 13.6 10.2 6.8 3.4 0.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 6.0 2.0 4.8 1.6 Power (W) Power (W) Current Derating* 3.6 2.4 1.2 0.8 0.4 1.2 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. E-mail：China@VBsemi TEL:86-755-83251052 FDS4465-NL&-9 www.VBsemi.tw TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 85 °C/W 3. TJM -- TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 4. Surface Mounted 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot E-mail：China@VBsemi TEL:86-755-83251052 1 10 FDS4465-NL&-9 www.VBsemi.tw SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 E-mail：China@VBsemi TEL:86-755-83251052 0.101 mm FDS4465-NL&-9 www.VBsemi.tw RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) E-mail：China@VBsemi TEL:86-755-83251052 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) FDS4465-NL&-9 www.VBsemi.tw Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives ( collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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