P6SMB6.8CAHM4G

P6SMB6.8(A) – P6SMB220(A) Taiwan Semiconductor 600W, 6.8V - 220V Surface Mount Transient Voltage Suppressor FEATURES ● ● ● ● ● ● ● ● ● ● KEY PARAMETERS Low profile package Ideal for automated placement Glass passivated chip junction Excellent clamping capability Typical IR less than 1μA above 10V Fast response time: Typically less than 1.0ps from 0 volt to BV min Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VWM 5.5 - 185 V VBR 6.8 - 220 V PPPSM 600 W TJ MAX 150 °C Package DO-214AA (SMB) Configuration Single die APPLICATIONS ● ● ● ● Switching mode power supply (SMPS) Adapters TV Monitor MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AA (SMB) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.090g (approximately) DO-214AA (SMB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Non-repetitive peak impulse power dissipation with (1) 10/1000μs waveform Steady state power dissipation at TA = 25°C Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load SYMBOL VALUE UNIT PPPSM 600 W Ptot 3 W IFSM 100 A Forward Voltage @ IF = 50A for Uni-directional only VF 3.5 / 5.0 V Junction temperature TJ -55 to +150 °C (2) TSTG -55 to +150 Storage temperature Notes: 1. Non-repetitive current pulse per Fig.3 and derated above TA = 25°C per Fig.2 2. VF = 3.5V on P6SMB6.8 - P6SMB91 device and VF = 5.0V on P6SMB100 - P6SMB220 device. °C Devices for Bipolar Applications 1. For bidirectional use C or CA suffix for types P6SMB6.8 - types P6SMB220A 2. Electrical characteristics apply in both directions 1 Version: P2102 P6SMB6.8(A) – P6SMB220(A) Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-case thermal resistance RӨJC 10 °C/W Junction-to-ambient thermal resistance RӨJA 55 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Breakdown Device P6SMB6.8 P6SMB6.8A P6SMB7.5 P6SMB7.5A P6SMB8.2 P6SMB8.2A P6SMB9.1 P6SMB9.1A P6SMB10 P6SMB10A P6SMB11 P6SMB11A P6SMB12 P6SMB12A P6SMB13 P6SMB13A P6SMB15 P6SMB15A P6SMB16 P6SMB16A P6SMB18 P6SMB18A P6SMB20 P6SMB20A P6SMB22 P6SMB22A P6SMB24 P6SMB24A P6SMB27 P6SMB27A P6SMB30 P6SMB30A P6SMB33 P6SMB33A P6SMB36 P6SMB36A P6SMB39 P6SMB39A P6SMB43 P6SMB43A P6SMB47 P6SMB47A Device Voltage Test Marking VBR (V) Current Code (Note 1) IT (mA) KDJ KEJ KFJ KGJ KHJ KKJ KLJ KMJ KNJ KPJ KQJ KRJ KSJ KTJ KUJ KVJ KWJ KXJ KYJ KZJ LDJ LEJ LFJ LGJ LHJ LKJ LLJ LMJ LNJ LPJ LQJ LRJ LSJ LTJ LUJ LVJ LWJ LXJ LYJ LZJ MDJ MEJ Min 6.12 6.46 6.75 7.13 7.38 7.79 8.19 8.65 9.00 9.50 9.90 10.5 10.8 11.4 11.7 12.4 13.5 14.3 14.4 15.2 16.2 17.1 18.0 19.0 19.8 20.9 21.6 22.8 24.3 25.7 27.0 28.5 29.7 31.4 32.4 34.2 35.1 37.1 38.7 40.9 42.3 44.7 Max 7.48 7.14 8.25 7.88 9.02 8.61 10.00 9.55 11.00 10.5 12.1 11.6 13.2 12.6 14.3 13.7 16.5 15.8 17.6 16.8 19.8 18.9 22.0 21.0 24.2 23.1 26.4 25.2 29.7 28.4 33.0 31.5 36.3 34.7 39.6 37.8 42.9 41.0 47.3 45.2 51.7 49.4 Stand-Off Voltage VWM (V) 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 8.10 8.55 8.92 9.40 9.72 10.2 10.5 11.1 12.1 12.8 12.9 13.6 14.5 15.3 16.2 17.1 17.8 18.8 19.4 20.5 21.8 23.1 24.3 25.6 26.8 28.2 29.1 30.8 31.6 33.3 34.8 36.8 38.1 40.2 2 Maximum Maximum Maximum Reverse Peak Pulse clamping Leakage Current voltage @VWM IPPM(A) VC@IPPM ID(µA) (Note 2) (V) 1000 1000 500 500 200 200 50 50 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 58 60 53 55 50 52 45 47 42 43 38 40 36 37 33 34 28 29 26 28 23 25 21 22 19 20 18 19 16 16.8 14.0 15.0 13.0 13.8 12.0 12.6 11.1 11.6 10.0 10.6 9.2 9.7 10.8 10.5 11.7 11.3 12.5 12.1 13.8 13.4 15.0 14.5 16.2 15.6 17.3 16.7 19.0 18.2 22.0 21.2 23.5 22.5 26.5 25.5 29.1 27.7 31.9 30.6 34.7 33.2 39.1 37.5 43.5 41.4 47.7 45.7 52.0 49.9 56.4 53.9 61.9 59.3 67.8 64.8 Maximum Temperature Coefficient of VBR(%/°C) 0.057 0.057 0.061 0.061 0.065 0.065 0.068 0.068 0.073 0.073 0.075 0.075 0.078 0.078 0.081 0.081 0.084 0.084 0.086 0.086 0.088 0.088 0.090 0.090 0.092 0.092 0.094 0.094 0.096 0.096 0.097 0.097 0.098 0.098 0.099 0.099 0.100 0.100 0.101 0.101 0.101 0.101 Version: P2102 P6SMB6.8(A) – P6SMB220(A) Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Breakdown Device Device Voltage Test Marking VBR (V) Current Code (Note 1) IT (mA) Min 45.9 48.5 50.4 53.2 55.8 58.9 61.2 64.6 67.5 71.3 73.8 77.9 81.9 86.5 90 95 99 105 108 114 117 124 135 143 144 152 153 162 162 171 180 190 198 209 Stand-Off Voltage VWM (V) Max 56.1 53.6 61.6 58.8 68.2 65.1 74.8 71.4 82.5 78.8 90.2 86.1 100 95.5 110 105 121 116 132 126 143 137 165 158 176 168 187 179 198 189 220 210 242 231 Maximum Maximum Maximum Reverse Peak Pulse clamping Leakage Current voltage @VWM IPPM(A) VC@IPPM ID(µA) (Note 2) (V) 8.5 8.9 7.8 8.1 7.0 7.4 6.4 6.8 5.8 6.1 5.3 5.5 4.8 5.0 4.3 4.5 3.9 4.1 3.6 3.8 3.3 3.5 2.9 3.0 2.7 2.8 2.5 2.6 2.4 2.5 2.1 2.2 1.8 1.9 73.5 70.1 80.5 77.0 89.0 85.0 98.0 92.0 108 103 118 113 131 125 144 137 158 152 173 165 187 179 215 207 230 219 244 234 258 246 287 274 342 328 P6SMB51 MFJ 1.0 41.3 1 P6SMB51A MGJ 1.0 43.6 1 P6SMB56 MHJ 1.0 45.4 1 P6SMB56A MKJ 1.0 47.8 1 P6SMB62 MLJ 1.0 50.2 1 P6SMB62A MMJ 1.0 53.0 1 P6SMB68 MNJ 1.0 55.1 1 P6SMB68A MPJ 1.0 58.1 1 P6SMB75 MQJ 1.0 60.7 1 P6SMB75A MRJ 1.0 64.1 1 P6SMB82 MSJ 1.0 66.4 1 P6SMB82A MTJ 1.0 70.1 1 P6SMB91 MUJ 1.0 73.7 1 P6SMB91A MVJ 1.0 77.8 1 P6SMB100 MWJ 1.0 81.0 1 P6SMB100A MXJ 1.0 85.5 1 P6SMB110 MYJ 1.0 89.2 1 P6SMB110A MZJ 1.0 94.0 1 P6SMB120 NDJ 1.0 97.2 1 P6SMB120A NEJ 1.0 102.0 1 P6SMB130 NFJ 1.0 105.0 1 P6SMB130A NGJ 1.0 111.0 1 P6SMB150 NHJ 1.0 121.0 1 P6SMB150A NKJ 1.0 128.0 1 P6SMB160 NLJ 1.0 130.0 1 P6SMB160A NMJ 1.0 136.0 1 P6SMB170 NNJ 1.0 138.0 1 P6SMB170A NPJ 1.0 145.0 1 P6SMB180 NQJ 1.0 146.0 1 P6SMB180A NRJ 1.0 154.0 1 P6SMB200 NSJ 1.0 162.0 1 P6SMB200A NTJ 1.0 171.0 1 P6SMB220 NUJ 1.0 175.0 1 P6SMB220A NVJ 1.0 185.0 1 Notes: 1. VBR measure after IT applied for 300μs, IT = square wave pulse or equivalent. 2. Surge current waveform per Fig.3 and derate per Fig.2. 3. For bipolar types having VWM of 10V and under, the ID limit is doubled. 4. For bidirectional use C or CA suffix for types P6SMB6.8 - P6SMB220A. 5. All terms and symbols are consistent with ANSI/IEEE C62.35. Maximum Temperature Coefficient of VBR(%/°C) 0.102 0.102 0.103 0.103 0.104 0.104 0.104 0.104 0.105 0.105 0.105 0.105 0.106 0.106 0.106 0.106 0.107 0.107 0.107 0.107 0.107 0.107 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING P6SMBx DO-214AA (SMB) 3,000 / Tape & Reel Notes: 1. "x" defines voltage from 6.8V(P6SMB6.8) to 220V(P6SMB220A) 3 Version: P2102 P6SMB6.8(A) – P6SMB220(A) Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.2 Pulse Derating Curve PPPM, PEAK PULSE POWER, KW 100 NON-REPETITIVE PULSE WAVEFORM SHOWN in FIG.3 10 1 0.1 0.1 1 10 100 1000 10000 PEAK PULSE POWER(PPP) OR CURRENT (IPP) DERATING IN PERCENTAGE (%) Fig.1 Peak Pulse Power Rating Curve 125 100 75 50 25 0 0 tp, PULSE WIDTH, (μs) Peak value IPPM 80 Half value-IPPM/2 60 40 10/1000μs, waveform 20 td 0 0 0.5 1 1.5 2 2.5 3 IFSM, PEAK FORWARD SURGE CURRENT (A) IPPM, PEAK PULSE CURRENT (%) Rise time tr=10μs to 100% 100 75 100 125 150 175 200 Fig.4 Maximum Non-Repetitive Forward Surge Current Unidirectional Only Pulse width(td) is defined as the point where the peak current decays to 50% of IPPM 120 50 TA, AMBIENT TEMPERATURE (°C) Fig.3 Clamping Power Pulse Waveform 140 25 PERCENT OF RATEDt,PEAK REVERSE VOLTAGE (%) TIME (ms) 100 8.3ms Single Half Sine Wave 10 1 10 100 NUMBER OF CYCLES AT 60 Hz 4 Version: P2102 P6SMB6.8(A) – P6SMB220(A) Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.5 Typical Junction Capacitance CJ, JUNCTION CAPACITANCE (pF) 10000 VR=0 1000 MEASURED at STAND-OFF VOLTAGE,Vwm 100 f=1.0MHz Vsig=50mVp-p 10 1 10 100 V(BR), BREAKDOWN VOLTAGE (V) 5 Version: P2102 P6SMB6.8(A) – P6SMB220(A) Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AA (SMB) SUGGESTED PAD LAYOUT MARKING DIAGRAM P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Cathode band for uni-directional products only 6 Version: P2102 P6SMB6.8(A) – P6SMB220(A) Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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