SM4507NHKPC-TRG

SM4507NHKP ® N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/60A, D D D D RDS(ON)= 5.5mΩ (Max.) @ VGS=10V RDS(ON)= 8.7mΩ (Max.) @ VGS=4.5V • • • • Reliable and Rugged S S Lower Qg and Qgd for high-speed switching S G Pin 1 DFN5x6-8 Lower RDS(ON) to Minimize Conduction Losses (5,6,7,8) DD DD Lead Free and Green Devices Available (RoHS Compliant) • • ESD protection 100% UIS + Rg Tested (4) G Applications • Power Management in Desktop Computer or S S S ( 1, 2, 3 ) DC/DC Converters. N-Channel MOSFET Ordering and Marking Information Package Code KP : DFN5x6-8 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel (2500ea/reel) Assembly Material G : Halogen and Lead Free Device SM4507NH Assembly Material Handling Code Temperature Range Package Code SM4507NH KP : 4507NH XXXXX XXXXX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - January, 2015 1 www.sinopowersemi.com SM4507NHKP ® Absolute Maximum Ratings Symbol (TA = 25°C Unless Otherwise Noted) Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage 30 V GSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 TJ TSTG Storage Temperature Range IS Diode Continuous Forward Current ID Continuous Drain Current a IDM PD Pulsed Drain Current Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case ID b Continuous Drain Current PD b Maximum Power Dissipation RθJA b IAS c E AS -55 to 150 c Thermal Resistance-Junction to Ambient Avalanche Current, Single pulse Avalanche Energy, Single pulse TC =25°C 12 TC =25°C 60 TC =100°C 38 TC =25°C 120 TC =25°C 29.8 TC =100°C 11.9 Steady State 4.2 TA=25°C 17.4 TA=70°C 13.9 TA=25°C 2.5 TA=70°C 1.6 t ≤ 10s 20 Steady State 50 L=0.1mH 20 L=0.3 mH 14 L=0.5mH 12 L=0.1mH 20 L=0.3 mH 29.4 L=0.5mH 36 V °C A W °C/W A W °C/W A mJ Note a：Pulse width is limited by max. junction temperature. Note b：R θJA steady state t=100s. o o Note c：UIS tested and pulse width limited by maximum junction temperature 150 C (initial temperature Tj=25 C). Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - January, 2015 2 www.sinopowersemi.com SM4507NHKP Electrical Characteristics Symbol ® (TA = 25°C unless otherwise noted) Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 30 - - V BV DSSt Drain-Source Breakdown Voltage (transient) VGS=0V, ID(aval)=20A Tcase=25°C, ttransient=100ns 34 - - V IDSS Zero Gate Voltage Drain Current - - 1 - - 30 VGS(th) I GSS R DS(ON) Gfs d VDS=24V, VGS=0V TJ=85°C µA Gate Threshold Voltage VDS=VGS, IDS=250µA 1.4 1.7 2.5 V Gate Leakage Current VGS=±20V, V DS=0V - - ±10 µA VGS=10V, I DS=15A - 4.5 5.5 - 6.75 - VGS=4.5V, IDS=10A - 6.7 8.7 VDS=6V, ID S=5A - 18 - S ISD=10A, VGS=0V - 0.8 1.1 V - 25 - - 11 - - 14 - - 11.8 - nC - 1.6 2.5 Ω - 780 1010 - 510 - - 39 - - 11 - - 8 - - 19.6 - - 17 - - 12.5 17 - 5.8 - - 1.4 - - 3 - - 1.5 - Drain-Source On-state Resistance Forward Transconductance TJ=125°C mΩ Diode Characteristics VSD d Diode Forward Voltage trr Reverse Recovery Time ta Charge Time tb Discharge Time Qrr Reverse Recovery Charge ISD=5A, dlSD /dt=100A/µs ns Dynamic Characteristics RG Gate Resistance C is s Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V,V DS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz VDD=15V, R L=15Ω, IDS=1A, VGEN =10V, RG=1Ω Turn-off Fall Time pF ns Gate Charge Characteristics Qg Total Gate Charge Qg Total Gate Charge Q gth Threshold Gate Charge Qgs Gate-Source Charge Q gd Gate-Drain Charge VDS=15V, VGS=10V, IDS=15A VDS=15V, VGS=4.5V, IDS=15A nC Note d：Pulse test ; pulse width≤300µs, duty cycle≤2%. Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - January, 2015 3 www.sinopowersemi.com SM4507NHKP ® Typical Operating Characteristics Drain Current 35 70 30 60 ID - Drain Current (A) Ptot - Power (W) Power Dissipation 25 20 15 10 5 50 40 30 20 10 o o 0 TC=25 C,VG=10V TC=25 C 0 20 40 60 80 0 100 120 140 160 60 80 100 120 140 160 Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance s(o n )L im it 100µs Rd ID - Drain Current (A) 40 Tj - Junction Temperature 100 1ms 10ms 1 DC o TC=25 C 0.1 0.01 20 Tj - Junction Temperature (°C) 300 10 0 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 Single Pulse o 1E-4 1E-6 100 RθJC : 4.2 C/W 1E-5 1E-4 1E-3 0.01 0.1 Square Wave Pulse Duration (sec) VDS - Drain - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - January, 2015 2 4 www.sinopowersemi.com SM4507NHKP ® Typical Operating Characteristics (Cont.) Thermal Transient Impedance Safe Operation Area Normalized Transient Thermal Resistance 300 Lim (o n) 10 Rd s ID - Drain Current (A) it 100 300µs 1ms 1 10ms 0.1 100ms 3 Duty = 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 0.01 Single Pulse 2 Mounted on 1in pad o RθJA : 50 C/W O TA=25 C 0.01 0.01 DC 0.1 1 1s 10 1E-3 1E-4 1E-3 0.01 100 1 10 100 500 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Output Characteristics Drain-Source On Resistance 120 14 100 12 VGS=4.5,5,6,7,8,9,10V 80 RDS(ON) - On - Resistance (mΩ) ID - Drain Current (A) 0.1 4V 60 3.5V 40 20 3V 10 VGS=4.5V 8 6 VGS=10V 4 2 2.5V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 VDS - Drain - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - January, 2015 0 20 40 60 80 100 120 ID - Drain Current (A) 5 www.sinopowersemi.com SM4507NHKP ® Typical Operating Characteristics (Cont.) Gate-Source On Resistance Gate Threshold Voltage 24 1.6 IDS =250µA 1.4 20 Normalized Threshold Voltage RDS(ON) - On - Resistance (mΩ) IDS=15A 16 12 8 4 0 2 3 4 5 6 7 8 9 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 10 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Drain-Source On Resistance Source-Drain Diode Forward 100 2.0 VGS = 10V IDS = 15A 1.6 IS - Source Current (A) Normalized On Resistance 1.8 1.4 1.2 1.0 0.8 o 10 Tj=150 C o Tj=25 C 1 0.6 o 0.4 -50 -25 RON@Tj=25 C: 4.5mΩ 0 25 50 0.1 0.0 75 100 125 150 Tj - Junction Temperature (°C) Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - January, 2015 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Source - Drain Voltage (V) 6 www.sinopowersemi.com SM4507NHKP ® Typical Operating Characteristics (Cont.) Capacitance Gate Charge 10 1200 Frequency=1MHz VDS =15V 9 800 VGS - Gate-source Voltage (V) C - Capacitance (pF) 1000 Ciss 600 Coss 400 200 Crss 0 8 7 6 5 4 3 2 1 0 0 5 IDS =15A 10 15 20 25 30 VDS - Drain-Source Voltage (V) 0 2 4 6 8 10 12 14 QG - Gate Charge (nC) Transfer Characteristics 100 ID - Drain Current (A) 80 60 40 o Tj=125 C 20 0 o Tj=25 C 0 1 2 3 4 5 6 VGS - Gate-Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - January, 2015 7 www.sinopowersemi.com SM4507NHKP ® Avalanche Test Circuit and Waveforms VDS L tp VDSX(SUS) DUT VDS IAS RG VDD VDD IL tp EAS 0.01Ω tAV Switching Time Test Circuit and Waveforms VDS RD VDS DUT 90% VGS RG VDD 10% VGS tp td(on) tr Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - January, 2015 8 td(off) tf www.sinopowersemi.com SM4507NHKP ® Package Information DFN5x6-8 F F1 D1 E E1 H K G1 G C A D e INCHES MAX. 0.90 MIN. MAX. 1.20 0.035 0.047 0.020 B 0.3 0.51 0.012 C 0.19 0.25 0.007 0.010 0.209 D 4.80 5.30 0.189 D1 4.00 4.40 0.157 0.173 E 5.90 6.20 0.232 0.244 5.80 0.217 0.228 E1 5.50 e 1.27 BSC 0.050 BSC F 0.05 0.30 0.002 0.012 F1 0.35 0.75 0.014 0.030 G 0.05 0.30 0.002 0.012 G1 0.35 0.75 0.014 0.030 H 3.34 3.9 0.131 0.154 K 0.762 - 0.03 - Note : 1.Dimension D, D1 and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 10 mil. Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - January, 2015 9 4.6 0.77 3.6 6.1 0.5 1.27 0.71 MIN. 0.61 A RECOMMENDED LAND PATTERN DFN5x6-8 MILLIMETERS 1.18 1.16 S Y M B O L B UNIT: mm www.sinopowersemi.com SM4507NHKP ® Carrier Tape & Reel Dimensions P0 P2 P1 A B0 W F E1 OD0 K0 A0 A OD1 B B T SECTION A-A SECTION B-B H A d T1 Application A H 330.0±2.00 50 MIN. DFN5x6-8 T1 C d 12.4+2.00 13.0+0.50 -0.00 -0.20 1.5 MIN. P0 P1 P2 4.0±0.10 8.0±0.10 2.0±0.10 D0 D1 1.5+0.10 1.5 MIN. -0.00 D W E1 20.2 MIN. 12.0±0.30 1.75±0.10 F 5.5±0.10 T A0 B0 K0 0.3±0.05 6.5±0.10 5.3±0.10 1.4±0.10 (mm) Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - January, 2015 10 www.sinopowersemi.com SM4507NHKP ® Taping Direction Information DFN5x6-8 USER DIRECTION OF FEED Classification Profile Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - January, 2015 11 www.sinopowersemi.com SM4507NHKP ® Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - January, 2015 12 www.sinopowersemi.com SM4507NHKP ® Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 60-150 seconds 217 °C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5°C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time 25°C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Package Thickness Volume mm 3