SM4803APRL

C C03C -30V /-5A Dual 2P Power MOSFET SM4803APRL -30V /-5A Dual 2P Power MOSFET C V General Description DS RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID -30V /-5A Dual 2P Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel infomation SM4803APRL SOP8 4803 3000 Parameter 5C03C -30 V 51.8 mΩ 81.4 mΩ -5 A 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 ±V Continuous Drain Current A Pulsed Drain Current Avalanche Current TA=25°C TA=70°C B Power Dissipation G -8.0 IAR -1.6 EAR -3.7 TA=25°C A A mJ 2 PD TA=70°C Junction and Storage Temperature Range -4.0 IDM G Repetitive avalanche energy L=0.1mH -5.0 ID W 1.3 -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead V01 C Steady State 1 www.sourcechips.com RθJA RθJL Typ Max Units 185 277 °C/W 370 444 °C/W 111 177 °C/W STATIC PARAMETERS Symbol BVDSS Parameter Drain-Source Breakdown Voltage -30V /-5A Dual 2P Power MOSFET Conditions ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA RDS(ON) Static Drain-Source OnResistance gFS VSD IS Min SM4803APRL Typ Max -30 Units V -1 -5 uA ±100 nA -1.9 -2.5 V VGS=-10V, ID=-5A 51.8 74.0 VGS=-4.5V, ID=-5A 81.4 105.8 Forward Transconductance VDS=-5V, ID=-5A 55 Diode Forward Voltage IS=-1A,VGS=0V -0.72 -1.3 mΩ S -1 V -5 A Typ Max Units 520 634 pF 100 123 pF 65 77 pF 1.1 Ω Max Units Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 2.2 tD(on) Turn-On DelayTime 5.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr V01 Body Diode Reverse Recovery Charge Conditions Min Typ 4.6 VGS=-10V, VDS=-15V, ID=-5A VGS=-10V, VDS=-15V,RL=0.75 Ω, RGEN=3Ω 2.3 1.54 4.4 15.4 nC ns 4.95 IF=-8A, dI/dt=500A/µs 11 ns IF=18A, dI/dt=500A/µs 5.3 nC 2 www.sourcechips.com -30V /-5A Dual 2P Power MOSFET V01 3 www.sourcechips.com SM4803APRL -30V /-5A Dual 2P Power MOSFET V01 4 www.sourcechips.com SM4803APRL