MMBTA05

UMW R UMW MMBTA05 SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA05 TRANSISTOR (NPN) FEATURES Driver transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING :1H MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 0.5 A PC Collector Power Dissipation 300 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 4 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 μA Collector cut-off current ICEO VCE=60V, IB=0 0.1 μA Collector cut-off current IEBO VEB=3V, IC=0 0.1 μA hFE1 VCE=1V, IC= 10mA 100 hFE2 VCE=1V, IC= 100mA 100 400 DC current gain Collector-emitter saturation voltage VCE(sat) Base-emitter voltage VBE Transition frequency fT www.umw-ic.com IC=100mA, IB=10mA 0.25 V VCE=1V, IC= 100mA 1.2 V VCE= 2V, IC=10mA f=100MHz 1 100 MHz 友台半导体有限公司 UMW R UMW MMBTA05 SOT-23 Plastic-Encapsulate Transistors Static Characteristic 35 COMMON EMITTER Ta=25℃ —— IC IC 25 20 180uA hFE 200uA 160uA DC CURRENT GAIN (mA) 30 COLLECTOR CURRENT hFE 1000 140uA 120uA 15 100uA 80uA 10 Ta=100℃ 100 Ta=25℃ 60uA 40uA 5 COMMON EMITTER VCE= 1V IB=20uA 0 0 1 2 3 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1000 10 0.1 4 IC VCEsat —— IC 500 100 (mA) IC β=10 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 800 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 10 COLLECTOR CURRENT 1000 β=10 Ta=25℃ 600 Ta=100 ℃ 400 200 0 0.1 1 10 100 COLLECTOR CURREMT IC —— IC 100 Ta=100 ℃ Ta=25℃ 10 0.1 500 1 10 COLLECTOR CURREMT (mA) VBE fT 500 500 —— 500 100 IC (mA) IC (MHz) COMMON EMITTER VCE=1V 100 TRANSITION FREQUENCY 10 T =2 5℃ a T =1 00℃ a COLLECTOR CURRENT IC fT (mA) 1 VCE (V) 1 100 COMMON EMITTER VCE=2V Ta=25℃ 0.1 0 200 400 600 800 10 1000 2 10 20 Cob/Cib 1000 —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Cib C (pF) Ta=25 ℃ CAPACITANCE PC 400 f=1MHz IE=0/IC=0 100 30 40 50 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) 10 Cob —— IC 60 70 (mA) Ta 300 200 100 0 1 0.1 1 REVERSE VOLTAGE www.umw-ic.com 10 V 0 30 25 50 75 AMBIENT TEMPERATURE (V) 2 100 Ta 125 150 (℃ ) 友台半导体有限公司 UMW R Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com UMW MMBTA05 SOT-23 Plastic-Encapsulate Transistors Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 3 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司