SM3020PSUC-TRG

SM3020PSU ® P-Channel Enhancement Mode MOSFET Features · Pin Description -30V/-43A, D RDS(ON)= 18mW(max.) @ VGS= -10V RDS(ON)= 30mW(max.) @ VGS= -4.5V · · S G Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-2 (RoHS Compliant) · D Moisture Sensitivity Level MSL1 (per JEDEC J-STD-020D) G Applications · Power Magagement in Desktop or DC/DC Converters S P-Channel MOSFET Ordering and Marking Information Package Code U : TO-252-2 Operating Junction Temperature Range C : -55 to 175 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device SM3020PS Assembly Material Handling Code Temperature Range Package Code SM3020PS U : SM3020P XXXXX XXXXX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - May, 2018 1 www.sinopowersemi.com SM3020PSU ® Absolute Maximum Ratings Symbol (TA = 25°C Unless Otherwise Noted) Parameter Rating VDSS Drain-Source Voltage -30 V GSS Gate-Source Voltage ±25 IDa IDM a ISa IASb b E AS TJ TSTG PD a RqJAa,c RqJC Continuous Drain Current (V GS=-10V) TA=25°C -43* TA=100°C -27 300ms Pulsed Drain Current (VGS=-10V) Unit V A -172* Diode Continuous Forward Current -3 Avalanche Current, Single pulse (L=0.3mH) -20 Avalanche Energy, Single pulse (L=0.3mH) 60 Maximum Junction Temperature 150 Storage Temperature Range mJ °C -55 to 150 Maximum Power Dissipation Thermal Resistance-Junction to Ambient Thermal Resistance-Junction to case TA=25°C 50 TA=100°C 20 t £ 10s 20 Steady State 50 Steady State 2.5 W °C/W 2 Note a：Surface Mounted on 1in pad area, t £ 10sec. o o Note b：UIS tested and pulse width limited by maximum junction temperature 150 C (initial temperature Tj =25 C). Note c：Maximum under Steady State conditions is 75 °C/W. Electrical Characteristics Symbol Parameter (TA = 25°C Unless Otherwise Noted) Test Conditions SM3020PSU Unit Min. Typ. Max. -30 - - - - -1 - - -30 -1.5 -2 -2.5 V nA Static Characteristics BV DS S Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS VGS =0V, IDS=-250mA VDS=-24V, VGS=0V TJ=85°C V mA Gate Threshold Voltage VDS=VGS, IDS=-250mA Gate Leakage Current VGS =±25V, V DS=0V - - ±100 VGS =-10V, IDS=-20A - 14 18 VGS =-4.5V, IDS=-5A - 22 30 Diode Forward Voltage ISD=-1A, VGS=0V - -0.7 -1 V Reverse Recovery Time ISD=-20A, diSD/dt=100A/ms - 19 - ns - 10 - nC RDS(ON) d Drain-Source On-state Resistance mW Diode Characteristics VSD d trr e Qrr e Reverse Recovery Charge Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - May, 2018 2 www.sinopowersemi.com SM3020PSU ® Electrical Characteristics (Cont.) Symbol Parameter Dynamic Characteristics (TA = 25°C Unless Otherwise Noted) Test Conditions SM3020PSU Min. Typ. Max. e Rg Gate Resistance VGS=0V, VDS=0V,F=1MHz - 3 - Ciss Input Capacitance - 1000 - Coss Output Capacitance - 210 - Crss Reverse Transfer Capacitance VGS=0V, VDS=-15V, Frequency=1.0MHz - 150 - td(ON) Turn-on Delay Time - 8 - - 12 - - 32 - - 16 - - 21 - - 2.6 - - 6.2 - tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Unit VDD=-15V, RL=15W, IDS=-1A, V GEN=-10V, RG=6W Turn-off Fall Time Gate Charge Characteristics W pF ns e Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=-15V, VGS=-10V, IDS=-20A nC Note d：Pulse test ; pulse width£300ms, duty cycle£2%. Note e：Guaranteed by design, not subject to production testing. Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - May, 2018 3 www.sinopowersemi.com SM3020PSU ® Typical Operating Characteristics Power Dissipation Drain Current 60 50 40 ID - Drain Current (A) Ptot - Power (W) 50 40 30 20 30 20 10 10 o TC=25 C,VG=-10V o 0 TC=25 C 0 20 40 60 0 80 100 120 140 160 40 60 80 100 120 140 160 Tj - Junction Temperature Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance )L im it 100 ds (o n 300ms 1ms R ID - Drain Current (A) 20 Tj - Junction Temperature (°C) 500 10ms 10 100ms 1s DC 1 o TA=25 C 0.1 0.01 0 0.1 1 10 100 VDS - Drain - Source Voltage (V) Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - May, 2018 2 1 Duty = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 Single Pulse 2 0.01 1E-4 Mounted on 1in pad o RqJA :20 C/W 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) 4 www.sinopowersemi.com SM3020PSU ® Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 100 50 VGS=-7,-8,-9,-10V -6V RDS(ON) - On - Resistance (mW) 80 ID - Drain Current (A) -5.5V 60 -5V -4.5V 40 -4V 20 -3.5V 0 0 1 2 3 4 40 VGS=-4.5V 30 20 VGS=-10V 10 0 5 0 10 VDS - Drain - Source Voltage (V) 50 60 Gate Threshold Voltage IDS=-20A IDS=-250mA 1.4 Normalized Threshold Voltage RDS(ON) - On - Resistance (mW) 40 1.6 50 40 30 20 10 0 30 ID - Drain Current (A) Gate-Source On Resistance 60 20 3 4 5 6 7 8 9 1.0 0.8 0.6 0.4 0.2 -50 -25 10 VGS - Gate - Source Voltage (V) Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - May, 2018 1.2 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.sinopowersemi.com SM3020PSU ® Typical Operating Characteristics (Cont.) Source-Drain Diode Forward Drain-Source On Resistance 100 2.0 VGS = -10V IDS = -20A 1.6 IS - Source Current (A) Normalized On Resistance 1.8 1.4 1.2 1.0 0.8 o Tj=150 C 10 o Tj=25 C 1 0.6 o 0.4 -50 -25 RON@Tj=25 C: 14mW 0 25 50 75 0.1 0.0 100 125 150 Tj - Junction Temperature (°C) 0.2 0.4 Gate Charge VDS=-15V 9 I =-20A DS C - Capacitance (pF) VGS - Gate-source Voltage (V) 1200 Ciss 800 600 400 Coss 200 0 Crss 0 5 1.2 1.4 1.6 10 Frequency=1MHz 1000 0.8 1.0 VSD - Source - Drain Voltage (V) Capacitance 1400 0.6 8 7 6 5 4 3 2 1 10 15 20 25 0 0 30 VDS - Drain-Source Voltage (V) Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - May, 2018 3 6 9 12 15 18 21 QG - Gate Charge (nC) 6 www.sinopowersemi.com SM3020PSU ® Avalanche Test Circuit and Waveforms VDS tAV L DUT EAS VDD RG VDD IAS tp IL VDS 0.01W tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDS RD td(on) tr DUT RG td(off) tf VGS 10% VGS VDD tp 90% VDS Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - May, 2018 7 www.sinopowersemi.com SM3020PSU ® Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - May, 2018 8 www.sinopowersemi.com SM3020PSU ® Classification Profile Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - May, 2018 9 www.sinopowersemi.com SM3020PSU ® Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 60-150 seconds 217 °C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP )** within 5°C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Ts max) (t s) Average ramp-up rate (Ts max to TP) Liquidous temperature (TL ) Time at liquidous (tL) Peak package body Temperature (Tp )* Time 25°C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp ) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 3 Package Thickness Volume mm3