BC817-25

BC817-16 BC817-40 BC817-25 SOT-23 NPN Plastic-Encapsulate Transistors FEATURES z z z z z For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) SO T-23 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25Я unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Tj Tstg 5 V 0.5 A Collector Power Dissipation 0.3 W Junction Temperature 150 Я Storage Temperature -55-150 Я ELECTRICAL CHARACTERISTICS (Ta=25Я unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC= 10ȝA, IE=0 50 V Collector-emitter breakdown voltage VCEO IC= 10mA, IB=0 45 V Emitter-base breakdown voltage VEBO IE= 1ȝA, IC=0 5 V Collector cut-off current ICBO VCB= 45 V , IE=0 0.1 ȝA Emitter cut-off current IEBO VEB= 4V, IC=0 0.1 ȝA hFE(1) VCE= 1V, IC= 100mA 100 hFE(2) VCE= 1V, IC= 500mA 40 DC current gain 600 Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB= 50mA 0.7 V Base-emitter saturation voltage VBE(sat) IC= 500mA, IB= 50mA 1.2 V 1.2 V Base-emitter voltage VBE Collecter capactiance Cob Transition frequency fT VCE= 1 V, IC= 500mA 10 VCB=10V ,f=1MHz VCE= 5 V, IC= 10mA f=100MHz pF 100 MHz CLASSIFICATION OF hFE (1) Rank BC817-16 BC817-25 BC817-40 Range 100-250 160-400 250-600 Marking 6A 6B 6C Page 1 Document ID Issued Date Revised Date Revision Page. AS-222645 2008/02/10 2010/03/10 B 3 BC817-16 BC817-25 BC817-40 SOT-23 NPN Plastic-Encapsulate Transistors Typical Characteristics BC817 Page 2 Document ID Issued Date Revised Date Revision Page. AS-222645 2008/02/10 2010/03/10 B 3 BC817-16 BC817-25 BC817-40 SOT-23 NPN Plastic-Encapsulate Transistors Typical Characteristics BC817 Page 3 Document ID Issued Date Revised Date Revision Page. AS-222645 2008/02/10 2010/03/10 B 3