SM9926PRL

SM9926 Dual N-Channel Enhancement-Mode MOSFET(20V, 6A) PRODUCT SUMMARY VDSS ID 20V 6A RDS(on) (m-ohm) Max 28 @ VGS = 4.5V, ID=6A 40 @ VGS =2.5V,ID=5.2A ◆ Features ．Advanced Trench Process Technology. ．High Density Cell Design for Ultra Low On-Resistance. ．Lead free product is acquired. ．Surface mount Package. ．RoHS Compliant. 1 2 3 4 5 Pin 1: Source1 Pin 2: Gate1 Pin 3: Source2 Pin 4: Gate2 Pin 5 / 6 : Drain2 Pin 7 / 8 : Drain1 ◆ Ordering Information Ordering Number Pin Assignment Package Lead Free Halogen Free SM9926PRL SM9926PRG SOP-8 SM9926X X X (1)Package Type (2)Packing Type Packing 2/4 G S 5/6/7/8 D Tape Reel (1) P：SOP-8 (2) R：Tape Reel (3) G：Halogen Free；L：Lead Free (3)Lead Free V01 1/3 1 www.sourcechips.com SM9926 ◆ Absolute Maximum Ratings Symbol (TA=25oC, unless otherwise noted) Parameter Ratings Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V 6 A 20 A 2.0 W -55 to +150 °C 62.5 °C/W ID IDM PD Tj, Tstg RθJA Drain Current (Continuous) Drain Current (Pulsed) a b o Total Power Dissipation @TA=25 C Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted) c a:Fused current that based on wire numbers and diameter b:Repetitive Rating: Pulse width limited by the maximum junction temperature c:1-in2 2oz Cu PCB board ◆ Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit • Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V - - 1 uA IGSS Gate-Body Leakage Current VGS=±12V, VDS=0V - - ±100 nA VDS=VGS, ID=250uA 0.6 0.65 1.2 V VGS=4.5V, ID=6.0A - 20 28 VGS=2.5V, ID=5.2A - 26 40 - 522.3 - - 98.48 - - 74.69 - - 6.24 - - 1.64 - • On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-State Resistance mΩ • Dynamic Characteristicsd Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=8V, VGS=0V, f=1MHz pF • Switching Characteristicsd Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge - 1.34 - td(on) Turn-on Delay Time - 10.4 - tr Turn-on Rise Time - 4.4 - td(off) Turn-off Delay Time - 27.36 - - 4.16 - - - 1.7 A - - 1.2 V tf VDS=10V, ID=6A, VGS=4.5V VDD=10V, ID=1A, VGEN=4.5V, RG=6Ω Turn-off Fall Time nC nS • Drain-Source Diode Characteristics IS VSD Maximum Diode Forward Current Drain-Source Diode Forward Voltage VGS=0V, IS=1.7A Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% d: Guaranteed by design: not subject to production testing V01 2 www.sourcechips.com SM9926 ◆ Characteristics Curve V01 3 www.sourcechips.com SM9926 ◆ Characteristics Curve V01 4 www.sourcechips.com