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ZD25Q16BTIGR

ZD25Q16BTIGR

  • 厂商:

    ZETTA(澜智)

  • 封装:

    SOP-8_4.9X3.9MM

  • 描述:

    ZD25Q16BTIGR

  • 数据手册
  • 价格&库存
ZD25Q16BTIGR 数据手册
ZD25Q16B ZD25Q16B Ultra Low Power, 16M-bit Serial Multi I/O Flash Memory Datasheet Performance Highlight  Wide Supply Range from 2.7 to 3.6V for Read, Erase and Program  Ultra Low Power consumption for Read, Erase and Program  X1, X2 and X4 Multi I/O Support  High reliability with 100K cycling and 20 Year-retention 1 ZD25Q16B Contents 1. FEATURES.............................................................................................................................................4 2. GENERAL DESCRIPTION........................................................................................................................5 3. MEMORY ORGANIZATION................................................................................................................... 7 4. DEVICE OPERATION............................................................................................................................. 8 5. DATA PROTECTION.............................................................................................................................. 9 6. STATUS REGISTER.............................................................................................................................. 11 7. COMMANDS DESCRIPTION................................................................................................................ 13 7.1. 7.2. 7.3. 7.4. 7.5. 7.6. 7.7. 7.8. 7.9. 7.10. 7.11. 7.12. 7.13. 7.14. 7.15. 7.16. 7.17. 7.18. 7.19. 7.20. 7.21. 7.22. 7.23. 7.24. 7.25. 7.26. 7.27. 7.28. 7.29. 7.30. 7.31. Write Enable (WREN) (06H).......................................................................................................................16 Write Disable (WRDI) (04H)....................................................................................................................... 16 Read Status Register (RDSR) (05H or 35H)................................................................................................ 17 Write Status Register (WRSR) (01H).......................................................................................................... 17 Write Enable for Volatile Status Register (50H)........................................................................................ 18 Read Data Bytes (READ) (03H)...................................................................................................................18 Read Data Bytes at Higher Speed (Fast Read) (0BH).................................................................................19 Dual Output Fast Read (3BH).....................................................................................................................19 Quad Output Fast Read (6BH)................................................................................................................... 20 Dual I/O Fast Read (BBH)........................................................................................................................... 20 Quad I/O Fast Read(EBH).......................................................................................................................... 22 Quad I/O Word Fast Read(E7H)................................................................................................................ 23 Page Program (PP) (02H)........................................................................................................................... 24 Quad Page Program (32H)......................................................................................................................... 25 Sector Erase (SE) (20H).............................................................................................................................. 26 32KB Block Erase (BE) (52H)...................................................................................................................... 26 64KB Block Erase (BE) (D8H)......................................................................................................................27 Chip Erase (CE) (60/C7H)........................................................................................................................... 27 Deep Power-Down (DP) (B9H)...................................................................................................................28 Release from Deep Power-Down or High Performance Mode and Read Device ID (RDI) (ABH).............29 Read Manufacture ID/ Device ID (REMS) (90H)........................................................................................ 30 Read Identification (RDID) (9FH)............................................................................................................... 31 Continuous Read Mode Reset (CRMR) (FFH)............................................................................................ 32 Read Unique ID (4BH)................................................................................................................................ 33 Program/Erase Suspend (PES) (75H)......................................................................................................... 33 Program/Erase Resume (PER) (7AH)......................................................................................................... 34 Erase Security Registers (44H)...................................................................................................................34 Program Security Registers (42H)..............................................................................................................35 Read Security Registers (48H)....................................................................................................................36 Enable Reset (66H) and Reset (99H)..........................................................................................................37 Read Serial Flash Discoverable Parameter (5AH)......................................................................................37 8. ELECTRICAL CHARACTERISTICS.......................................................................................................... 42 8.1. 8.2. POWER-ON TIMING................................................................................................................................... 42 INITIAL DELIVERY STATE.............................................................................................................................42 2 ZD25Q16B 8.3. 8.4. 8.5. 8.6. 9. ABSOLUTE MAXIMUM RATINGS................................................................................................................42 CAPACITANCE MEASUREMENT CONDITIONS........................................................................................... 43 DC CHARACTERISTICS.................................................................................................................................44 AC CHARACTERISTICS.................................................................................................................................46 ORDERING INFORMATION.................................................................................................................51 10. PACKAGE INFORMATION................................................................................................................... 52 10.1. 10.2. 10.3. 10.4. 8-Lead SOP(150mil)................................................................................................................................... 52 8-Lead SOP(208mil)................................................................................................................................... 53 8-Lead TSSOP(173mil)................................................................................................................................54 8-Land WSON(6x5mm).............................................................................................................................. 55 11. REVISION HISTORY.............................................................................................................................56 3 ZD25Q16B 1. FEATURES ◆ 16M-bit Serial Flash ◆ Fast Program/Erase Speed -2048K-Byte -Page Program time: 1.1ms typical -256 Bytes per programmable page -Sector Erase time: 5.1ms typical -Block Erase time: 5.1ms typical ◆ Standard, Dual, Quad SPI -Chip Erase time: 5.2ms typical -Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD# -Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD# ◆ -Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3 Flexible Architecture -Uniform Sector of 4K-Byte -Uniform Block of 32/64K-Byte ◆ High Speed Clock Frequency -120MHz for fast read with 30PF load ◆ ◆ ◆ Low Power Consumption -Dual I/O Data transfer up to 240Mbits/s -0.65uA typical deep power down current -Quad I/O Data transfer up to 480Mbits/s -8uA typical standby current Software/Hardware Write Protection ◆ Advanced Security Features -Write protect all/portion of memory via software -128-Bit Unique ID for each device -Enable/Disable protection with WP# Pin -4x256-Byte security registers with OTP locks -Top/Bottom Block protection -Discoverable parameters (SFDP) register Minimum 100,000 Program/Erase Cycles ◆ Single Power Supply Voltage -Full voltage range:2.7~3.6V ◆ Data Retention -20-year data retention typical ◆ Package Information -SOP8 (150mil) ◆ Allows XIP (execute in place) Operation -SOP8 (208mil) -TSSOP8 (173mil) -WSON8 (6*5mm) -Continuous Read With 8/16/32/64-Byte Wrap -TFBGA-24(6*4 ball array) 4 ZD25Q16B 2. GENERAL DESCRIPTION The ZD25Q16B(16M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and supports the Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), and I/O3 (HOLD#). The Dual I/O data is transferred with speed of 240Mbits/s and the Quad I/O & Quad output data is transferred with speed of 480Mbits/s. CONNECTION DIAGRAM 1 CS# 8 2 SO WP# GND Vcc 7 HOLD 3 6 SCLK 4 5 Top View SI 8-PIN SOP (150mil/200mil) and TSSOP Top View 4 3 2 Nc Vcc Nc Vss Nc 1 WP# HOLD Nc Nc Nc SI Nc Nc SCLK CS# SO Nc Nc Nc Nc Nc Nc Nc Nc A B C D E F 24-BALL TFBGA PIN DESCRIPTION Pin Name I/O Description CS# I Chip Select Input SO (IO1) I/O Data Output (Data Input Output 1) WP# (IO2) I/O Write Protect Input (Data Input Output 2) Ground GND SI (IO0) I/O Data Input (Data Input Output 0) SCLK I Serial Clock Input HOLD# (IO3) I/O Hold Input (Data Input Output 3) VCC Power Supply Note: CS# must be driven high if chip is not selected. Please don’t leave CS# floating any time after power is on. 5 ZD25Q16B BLOCK DIAGRAM Din Hv PageLatch High Voltage Generator HOLD#(IO3) SCLK WP#(IO2) SO(IO1) CS SPI Command & Control Logic Row Decoder SI(IO0) High Voltage Control Flash - cell Array Address Latch Coumun Mux Dout 6 Sense Amplifier ZD25Q16B 3. MEMORY ORGANIZATION ZD25Q16B Each device has Each block has Each sector has Each page has 2M 64/32K 4K 256 Bytes 8K 256/128 16 - pages 512 16/8 - - sectors 32/64 - - - blocks UNIFORM BLOCK SECTOR ARCHITECTURE ZD25Q16B 64K Bytes Block Sector Architecture Block 31 30 …… …… 2 1 0 Sector Address range 511 1FF000H 1FFFFFH …… …… …… 496 1F0000H 1F0FFFH 495 1EF000H 1EFFFFH …… …… …… 480 1E0000H 1E0FFFH …… …… …… …… …… …… …… …… …… …… …… …… …… …… …… …… …… …… 47 02F000H 02FFFFH …… …… …… 32 020000H 020FFFH 31 01F000H 01FFFFH …… …… …… 16 010000H 010FFFH 15 00F000H 00FFFFH …… …… …… 0 000000H 000FFFH 7 ZD25Q16B 4. DEVICE OPERATION SPI Mode Standard SPI The ZD25Q16B features a serial peripheral interface on 4 signals bus: Serial Clock (SCLK), Chip Select (CS#), Serial Data Input (SI) and Serial Data Output (SO). Both SPI bus mode 0 and 3 are supported. Input data is latched on the rising edge of SCLK and data shifts out on the falling edge of SCLK. Dual SPI The ZD25Q16B supports Dual SPI operation when using the “Dual Output Fast Read” and “Dual I/O Fast Read” (3BH and BBH) commands. These commands allow data to be transferred to or from the device at twice the rate of the standard SPI. When using the Dual SPI command the SI and SO pins become bidirectional I/O pins: IO0 and IO1. Quad SPI The ZD25Q16B supports Quad SPI operation when using the “Quad Output Fast Read” (6BH), ”Quad I/O Fast Read”(EBH), “Quad I/O Word Fast Read” (E7H) and “Quad Page Program” (32H) commands. These commands allow data to be transferred to or from the device at four times the rate of the standard SPI. When using the Quad SPI command the SI and SO pins become bidirectional I/O pins: IO0 and IO1, and WP# and HOLD# pins become IO2 and IO3. Quad SPI commands require the non-volatile Quad Enable bit (QE) in Status Register to beset. Hold The HOLD# function is only available when QE=0, If QE=1, The HOLD# functions is disabled, the pin acts as dedicated data I/O pin. The HOLD# signal goes low to stop any serial communications with the device, but doesn’t stop the operation of write status register, programming, or erasing in progress. The operation of HOLD, need CS# keep low, and starts on falling edge of the HOLD# signal, with SCLK signal being low (if SCLK is not being low, HOLD operation will not start until SCLK being low). The HOLD condition ends on rising edge of HOLD# signal with SCLK being low (If SCLK is not being low, HOLD operation will not end until SCLK being low). The SO is high impedance, both SI and SCLK don’t care during the HOLD operation, if CS# drives high during HOLD operation, it will reset the internal logic of the device. To re-start communication with chip, the HOLD# must be at high and then CS# must be at low. Figure 1. Hold Condition CS # SCLK HOLD HOLD HOLD 8 ZD25Q16B 5. DATA PROTECTION The ZD25Q16B provide the following data protection methods: Write Enable (WREN) command: The WREN command is set the Write Enable Latch bit (WEL). The WEL bit will ◆ return to reset by the following situation: -Power-Up -Write Disable (WRDI) -Write Status Register (WRSR) -Page Program (PP) -Sector Erase (SE) / Block Erase (BE) / Chip Erase (CE) Software Protection Mode: The Block Protect (BP4, BP3, BP2, BP1, and BP0) bits define the section of the memory ◆ array that can be read but not change. ◆ Hardware Protection Mode: WP# goes low to protect the BP0~BP4 bits and SRP0~1 bits. ◆ Deep Power-Down Mode: In Deep Power-Down Mode, all commands are ignored except the Release from Deep Power-Down Mode command. Table1.0 ZD25Q16B Protected area size (CMP=0) Status Register Content Memory Content BP4 BP3 BP2 BP1 BP0 Blocks Addresses Density Portion X X 0 0 0 NONE NONE NONE NONE 0 0 0 0 1 31 1F0000H-1FFFFFH 64KB Upper 1/32 0 0 0 1 0 30 to 31 1E0000H-1FFFFFH 128KB Upper 1/16 0 0 0 1 1 28 to 31 1C0000H-1FFFFFH 256KB Upper 1/8 0 0 1 0 0 24 to 31 180000H-1FFFFFH 512KB Upper 1/4 0 0 1 0 1 16 to 31 100000H-1FFFFFH 1M Upper 1/2 0 1 0 0 1 0 000000H-00FFFFH 64KB Lower 1/32 0 1 0 1 0 0 to 1 000000H-01FFFFH 128KB Lower 1/16 0 1 0 1 1 0 to 3 000000H-03FFFFH 256KB Lower 1/8 0 1 1 0 0 0 to 7 000000H-07FFFFH 512KB Lower 1/4 0 1 1 0 1 0 to 15 000000H-0FFFFFH 1M Lower 1/2 X X 1 1 X 0 to 31 000000H-1FFFFFH 2M ALL 1 0 0 0 1 31 1FF000H-1FFFFFH 4KB Top Block 1 0 0 1 0 31 1FE000H-1FFFFFH 8KB Top Block 1 0 0 1 1 31 1FC000H-1FFFFFH 16KB Top Block 1 0 1 0 X 31 1F8000H-1FFFFFH 32KB Top Block 1 1 0 0 1 0 000000H-000FFFH 4KB Bottom Block 1 1 0 1 0 0 000000H-001FFFH 8KB Bottom Block 1 1 0 1 1 0 000000H-003FFFH 16KB Bottom Block 1 1 1 0 X 0 000000H-007FFFH 32KB Bottom Block 9 ZD25Q16B Table1.1 ZD25Q16B Protected area size (CMP=1) Status Register Content Memory Content BP4 BP3 BP2 BP1 BP0 Blocks Addresses Density Portion X X 0 0 0 0 to 31 000000H-1FFFFFH 2M ALL 0 0 0 0 1 0 to 30 000000H-1EFFFFH 1984KB Lower 31/32 0 0 0 1 0 0 to 29 000000H-1DFFFFH 1920KB Lower 15/16 0 0 0 1 1 0 to 27 000000H-1BFFFFH 1792KB Lower 7/8 0 0 1 0 0 0 to 23 000000H-17FFFFH 1536KB Lower 3/4 0 0 1 0 1 0 to 15 000000H-0FFFFFH 1M Lower 1/2 0 1 0 0 1 1 to 31 010000H-1FFFFFH 1984KB Upper 31/32 0 1 0 1 0 2 to 31 020000H-1FFFFFH 1920KB Upper 15/16 0 1 0 1 1 4 to 31 040000H-1FFFFFH 1792KB Upper 7/8 0 1 1 0 0 8 to 31 080000H-1FFFFFH 1536KB Upper 3/4 0 1 1 0 1 16 to 31 100000H-1FFFFFH 1M Upper 1/2 X X 1 1 X NONE NONE NONE NONE 1 0 0 0 1 0 to 31 000000H-1FEFFFH 2044KB Lower 511/512 1 0 0 1 0 0 to 31 000000H-1FDFFFH 2040KB Lower 255/256 1 0 0 1 1 0 to 31 000000H-1FBFFFH 2032KB Lower 127/128 1 0 1 0 X 0 to 31 000000H-1F7FFFH 2016KB Lower 63/64 1 1 0 0 1 0 to 31 001000H-1FFFFFH 2044KB Upper 511/512 1 1 0 1 0 0 to 31 002000H-1FFFFFH 2040KB Upper 255/256 1 1 0 1 1 0 to 31 004000H-1FFFFFH 2032KB Upper 127/128 1 1 1 0 X 0 to 31 008000H-1FFFFFH 2016KB Upper 63/64 10 ZD25Q16B 6. STATUS REGISTER S15 S14 S13 S12 S11 S10 S9 S8 SUS CMP Reserved Reserved Reserved LB QE SRP1 S7 S6 S5 S4 S3 S2 S1 S0 BP1 BP0 WEL WIP SRP0 BP4 BP3 BP2 The status and control bits of the Status Register are as follows: WIP bit. The Write in Progress (WIP) bit indicates whether the memory is busy in program/erase/write status register progress. When WIP bit sets to 1, means the device is busy in program/erase/write status register progress, when WIP bit sets 0, means the device is not in program/erase/write status register progress. WEL bit. The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch. When set to 1 the internal Write Enable Latch is set, when set to 0 the internal Write Enable Latch is reset and no Write Status Register, Program or Erase command is accepted. BP4, BP3, BP2, BP1, BP0 bits. The Block Protect (BP4, BP3, BP2, BP1, and BP0) bits are non-volatile. They define the size of the area to be software protected against Program and Erase commands. These bits are written with the Write Status Register (WRSR) command. When the Block Protect (BP4, BP3, BP2, BP1, BP0) bits are set to 1, the relevant memory area (as defined in Table1).becomes protected against Page Program (PP), Sector Erase (SE) and Block Erase (BE) commands. The Block Protect (BP4, BP3, BP2, BP1, and BP0) bits can be written provided that the Hardware Protected mode has not been set. The Chip Erase (CE) command is executed, if the Block Protect (BP2, BP1, and BP0) bits are 0 and CMP=0 or the Block Protect (BP2, BP1, and BP0) bits are 1 and CMP=1. SRP1, SRP0 bits. The Status Register Protect (SRP1 and SRP0) bits are non-volatile Read/Write bits in the status register. The SRP bits control the method of write protection: software protection, hardware protection, power supply lock-down or one time programmable protection. SRP1 SRP0 #WP Status Register 0 0 X Software Protected 0 1 0 Hardware Protected 0 1 1 Hardware Unprotected 1 0 X 1 1 X Power Supply Lock-Down(1) (2) One Time Program(2) Description The Status Register can be written to after a Write Enable command, WEL=1.(Default) WP#=0, the Status Register locked and cannot be written to. WP#=1, the Status Register is unlocked and can be written to after a Write Enable command, WEL=1. Status Register is protected and cannot be written to again until the next Power-Down, Power-Up cycle. Status Register is permanently protected and cannot be written to. NOTE: 1. When SRP1, SRP0= (1, 0), a Power-Down, Power-Up cycle will change SRP1, SRP0 to (0, 0)state. 2. This feature is available on special order. Please contact Zetta Device for details. 11 ZD25Q16B QE bit. The Quad Enable (QE) bit is a non-volatile Read/Write bit in the Status Register that allows Quad operation. When the QE bit is set to 0 (Default) the WP# pin and HOLD# pin are enable. When the QE pin is set to 1, the Quad IO2 and IO3 pins are enabled. (It is best to set the QE bit to 0 to avoid short issues if the WP# or HOLD# pin is tied directly to the power supply or ground). LB bit. The LB bit is a non-volatile One Time Program (OTP) bit in Status Register (S10) that provide the write protect control and status to the Security Registers. The default state of LB is 0, the security registers are unlocked. LB can be set to 1 individually using the Write Register instruction. LB is One Time Programmable, once it’s set to 1, the Security Registers will become read-onlypermanently. CMP bit The CMP bit is a non-volatile Read/Write bit in the Status Register (S14). It is used in conjunction with the BP4-BP0 bits to provide more flexibility for the array protection. Please see the Status registers Memory Protection table for details. The default setting is CMP=0. SUS bit The SUS bit is a read only bit in the status register (S15) that is set to 1 after executing an Erase/Program Suspend (75H) command. The SUS bit is cleared to 0 by Erase/Program Resume (7AH) command as well as a power-down, powerup cycle. 12 ZD25Q16B 7. COMMANDS DESCRIPTION All commands, addresses and data are shifted in and out of the device, beginning with the most significant bit on the first rising edge of SCLK after CS# is driven low. Then, the one-Byte command code must be shifted in to the device, with most significant bit first on SI, and each bit is latched on the rising edges of SCLK. See Table2, every command sequence starts with a one-Byte command code. Depending on the command, this might be followed by address Bytes, or by data Bytes, or by both or none. CS# must be driven high after the last bit of the command sequence has been completed. For the commands of Read, Fast Read, Read Status Register or Release from Deep PowerDown, and Read Device ID, the shifted-in command sequence is followed by a data-out sequence. All read instruction can be completed after any bit of the data-out sequence is being shifted out, and then CS# must be driven high to return to deselected status. For the commands of Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register, Write Enable, Write Disable or Deep Power-Down command, CS# must be driven high exactly at a Byte boundary, otherwise the command is rejected, and is not executed. That means CS# must be driven high when the number of clock pulses after CS# being driven low is an exact multiple of eight. For Page Program, if CS# is driven high at any time the input Byte is not a full Byte, nothing will happen and WEL will not be reset. Table2. Commands (Standard/Dual/Quad SPI) Byte 2 Byte 3 Byte 4 Byte 5 Command Name Write Enable Write Disable Byte 1 06H 04H Volatile SR Write Enable Read Status Register Read Status Register-1 Write Status Register Read Data Fast Read 50H 05H 35H 01H 03H 0BH (S7-S0) (S15-S8) S7-S0 A23-A16 A23-A16 S15-S8 A15-A8 A15-A8 A7-A0 A7-A0 (D7-D0) dummy (Next Byte) (D7-D0) (continuous) (continuous) Dual Output Fast Read Dual I/O Fast Read Quad Output Fast Read Quad I/O Fast Read Quad I/O Word Fast Read(7) Continuous Read Mode Reset Page Program Quad Page Program Sector Erase Block Erase(32K) Block Erase(64K) 3BH A23-A16 A15-A8 A7-A0 dummy (D7-D0)(1) (continuous) BBH A23-A8(2) (D7-D0)(1) 6BH A23-A16 A7-A0 M7-M0(2) A15-A8 EBH A23-A0 M7-M0(4) A23-A0 M7-M0(4) dummy(5) (D7-D0)(3) (continuous) dummy(6) (D7-D0)(3) (continuous) A23-A16 A23-A16 A23-A16 A23-A16 A23-A16 A15-A8 A15-A8 A15-A8 A15-A8 A15-A8 A7-A0 A7-A0 A7-A0 A7-A0 A7-A0 Chip Erase C7/60 H 66H 99H Enable Reset Reset Program/Erase Suspend E7H Byte 6 (continuous) (continuous) A7-A0 (continuous) dummy (D7-D0)(3) FFH 02 H 32H 20H 52H D8H n-Bytes 75H 13 D7-D0 D7-D0 Next Byte (continuous) ZD25Q16B Program/Erase Resume 7AH Deep Power-Down B9H Release From Deep Power-Down, And Read Device ID Release From Deep Power-Down ABH Manufacturer/ Device ID dummy dummy dummy (DID7DID0) (continuous) 90H dummy dummy 00H (MID7MID0) Read Unique ID 4BH dummy dummy dummy dummy Read Serial Flash Discoverable Parameter 5AH A23-A16 A15-A8 A7-A0 dummy Read Identification 9FH (MID7M0) (JDID15JDID8) (JDID7JDID0) Erase Security Registers(8) Program Security Registers(8) 44H A23-A16 A15-A8 A7-A0 42H A23-A16 A15-A8 A7-A0 D7-D0 D7-D0 Read Security Registers(8) 48H A23-A16 A15-A8 A7-A0 dummy (D7-D0) ABH IO0 = (D6, D4, D2, D0) IO1 = (D7, D5, D3, D1) 2. Dual Input Address IO0 = A22, A20, A18, A16, A14, A12, A10, A8 A6, A4, A2, A0, M6, M4, M2, M0 IO1 = A23, A21, A19, A17, A15, A13, A11, A9 A7, A5, A3, A1, M7, M5, M3, M1 IO0 = (D4, D0, …..) IO1 = (D5, D1, …..) IO2 = (D6, D2, …..) IO3 = (D7, D3, …..) 4. Quad Input Address IO0 = A20, A16, A12, A8, A4, A0, M4, M0 IO1 = A21, A17, A13, A9, A5, A1, M5, M1 IO2 = A22, A18, A14, A10, A6, A2, M6, M2 IO3 = A23, A19, A15, A11, A7, A3, M7, M3 5. Fast Read Quad I/O Data IO0 = (x, x, x, x, D4, D0,…) IO1 = (x, x, x, x, D5, D1,…) IO2 = (x, x, x, x, D6, D2,…) IO3 = (x, x, x, x, D7, D3,…) 6. Fast Word Read Quad I/O Data IO0 = (x, x, D4, D0,…) IO1 = (x, x, D5, D1,…) 14 (continuous) (D7-D0) (continuous) (continuous) (continuous) NOTE: 1. Dual Output data 3. Quad Output Data (DID7DID0) (UID7UID0) ZD25Q16B IO2 = (x, x, D6, D2,…) IO3 = (x, x, D7, D3,…) 7. Fast Word Read Quad I/O Data: the lowest address bit must be 0. 8. Security Registers Address: Security Register0: A23-A16=00H, A15-A8=00H, A7-A0= Byte Address; Security Register1: A23-A16=00H, A15-A8=01H, A7-A0= Byte Address; Security Register2: A23-A16=00H, A15-A8=02H, A7-A0= Byte Address; Security Register3: A23-A16=00H, A15-A8=03H, A7-A0= Byte Address. 9. Address, Continuous Read Mode bits, Dummy bits, Manufacture ID and Device ID IO0 = (A20, A16, A12, A8, A4, A0, M4, M0, x, x, x, x, MID4, MID0, DID4, DID0, …) IO1 = (A21, A17, A13, A9, A5, A1, M5, M1, x, x, x, x, MID5, MID1, DID5, DID1, …) IO2 = (A22, A18, A14, A10, A6, A2, M6, M2, x, x, x, x, MID6, MID2, DID6, DID2, …) IO3 = (A23, A19, A15, A11, A7, A3, M7, M3, x, x, x, x, MID7, MID3, DID7, DID3, …) Table of ID Definitions: ZD25Q16B Operation Code MID7-MID0 ID15-ID8 ID7-ID0 9FH BA 60 15 90H BA 14 ABH 14 15 ZD25Q16B 7.1. Write Enable (WREN) (06H) The Write Enable (WREN) command is for setting the Write Enable Latch (WEL) bit. The Write Enable Latch (WEL) bit must be set prior to every Page Program (PP), Sector Erase (SE), Block Erase (BE), Chip Erase (CE), Write Status Register (WRSR) and Erase/Program Security Registers command. The Write Enable (WREN) command sequence: CS# Figure 2. Write Enable Sequence Diagram CS # 0 1 2 3 4 5 6 7 SCLK Command SI 06H SO High-Z 7.2. Write Disable (WRDI) (04H) The Write Disable command is for resetting the Write Enable Latch (WEL) bit. The Write Disable command sequence: CS# goes low the Write Disable command goes high. The WEL bit is reset by following condition: Power- up and upon completion of the Write Status Register, Page Program, Sector Erase, Block Erase, Chip Erase, Erase/Program Security Registers and Reset commands. Figure 3. Write Disable Sequence Diagram CS # 0 1 2 3 4 SCLK Command SI 04H SO High-Z 16 5 6 7 ZD25Q16B 7.3. Read Status Register (RDSR) (05H or 35H) The Read Status Register (RDSR) command is for reading the Status Register. The Status Register may be read at any time, even while a Program, Erase or Write Status Register cycle is in progress. When one of these cycles is in progress, it is recommended to check the Write In Progress (WIP) bit before sending a new command to the device. It is also possible to read the Status Register continuously. For command code “05H”, the SO will output Status Register bits S7~S0. The command code “35H”, the SO will output Status Register bitsS15~S8. Figure4. Read Status Register Sequence Diagram CS # 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 SCLK Command 05H or 35H SI 7-S0 or S15-S8out SO 7 6 5 4 3 S7-S0 or S15-S8 out 2 1 0 7 6 5 4 3 2 1 0 7.4. Write Status Register (WRSR) (01H) The Write Status Register (WRSR) command allows new values to be written to the Status Register. Before it can be accepted, a Write Enable (WREN) command must previously have been executed. After the Write Enable (WREN) command has been decoded and executed, the device sets the Write Enable Latch(WEL). The Write Status Register (WRSR) command has no effect on S15, S1 and S0 of the Status Register. CS# must be driven high after the eighth or sixteen bit of the data Byte has been latched in. If not, the Write Status Register (WRSR) command is not executed. If CS# is driven high after eighth bit of the data Byte, the CMP and QE bit will not change. As soon as CS# is driven high, the self-timed Write Status Register cycle (whose duration is tW) is initiated. While the Write Status Register cycle is in progress, the Status Register may still be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Write Status Register cycle, and is 0 when it is completed. When the cycle is completed, the Write Enable Latch (WEL) isreset. The Write Status Register (WRSR) command allows the user to change the values of the Block Protect (BP4, BP3, BP2, BP1, BP0) bits, to define the size of the area that is to be treated as read-only, as defined in Table1. The Write Status Register (WRSR) command also allows the user to set or reset the Status Register Protect (SRP) bit in accordance with the Write Protect (WP#) signal. The Status Register Protect (SRP) bit and Write Protect (WP#) signal allow the device to be put in the Hardware Protected Mode. The Write Status Register (WRSR) command is not executed once the Hardware Protected Mode is entered. Figure5. Write Status Register Sequence Diagram CS# SCLK 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 Command SI SO 01H Status Register in 7 6 MSB 5 4 3 High -Z 17 2 1 0 15 14 13 12 11 10 9 8 ZD25Q16B 7.5. Write Enable for Volatile Status Register (50H) The non-volatile Status Register bits can also be written to as volatile bits. This gives more flexibility to change the system configuration and memory protection schemes quickly without waiting for the typical non-volatile bit write cycles or affecting the endurance of the Status Register non-volatile bits. The Write Enable for Volatile Status Register command must be issued prior to a Write Status Register command and any other commands can't be inserted between them. Otherwise, Write Enable for Volatile Status Register will be cleared. The Write Enable for Volatile Status Register command will not set the Write Enable Latch bit, it is only valid for the Write Status Register command to change the volatile Status Register bit values. Figure 6. Write Enable for Volatile Status Register Sequence Diagram CS # 0 1 2 3 4 5 6 7 SCLK Command(50H) SI SO High-Z 7.6. Read Data Bytes (READ) (03H) The Read Data Bytes (READ) command is followed by a 3-Byte address (A23-A0), and each bit is latched-in on the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO, and each bit is shifted out, at a Max frequency fR, on the falling edge of SCLK. The first Byte addressed can be at any location. The address is automatically incremented to the next higher address after each Byte of data is shifted out. The whole memory can, therefore, be read with a single Read Data Bytes (READ) command. Any Read Data Bytes (READ) command, while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress. Figure 7. Read Data Bytes Sequence Diagram CS# SCLK 0 1 2 3 4 5 6 7 8 9 10 24 -bit address Command SI SO 03H High - Z 28 29 30 31 32 33 34 35 36 37 38 39 23 22 21 3 2 1 0 Data Out1 MSB MSB 18 7 6 5 4 3 2 Data Out2 1 0 ZD25Q16B 7.7. Read Data Bytes at Higher Speed (Fast Read) (0BH) The Read Data Bytes at Higher Speed (Fast Read) command is for quickly reading data out. It is followed by a 3- Byte address (A23-A0) and a dummy Byte, and each bit is latched-in on the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO, and each bit is shifted out, at a Max frequency fC, on the falling edge of SCLK. The first Byte addressed can be at any location. The address is automatically incremented to the next higher address after each Byte of data is shifted out. Figure 8. Read Data Bytes at Higher Speed Sequence Diagram CS# 0 SCLK 1 2 5 4 3 6 7 8 9 10 Command 24- bit address 0BH SI 28 29 30 31 23 22 21 3 0 2 1 SO CS# 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK Dummy Byte SI 7 6 5 4 3 2 1 0 Data Out1 SO 7 6 5 MSB 4 3 Data Out2 2 1 0 7 6 5 MSB 7.8. Dual Output Fast Read (3BH) The Dual Output Fast Read command is followed by 3-Byte address (A23-A0) and a dummy Byte, each bit being latched in during the rising edge of SCLK, then the memory contents are shifted out 2-bit per clock cycle from SI and SO. The command sequence is shown in followed Figure 9 The first Byte addressed can be at any location. The address is automatically incremented to the next higher address after each Byte of data is shifted out. Figure 9. Dual Output Fast Read Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 SCLK Command SI 24- bit address 3BH 23 22 21 3 2 1 0 SO CS# 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK Dummy Clocks SI SO 6 4 2 0 6 4 2 0 7 5 3 1 7 5 3 1 MSB 19 MSB ZD25Q16B 7.9. Quad Output Fast Read (6BH) The Quad Output Fast Read command is followed by 3-Byte address (A23-A0) and a dummy Byte, each bit being latched in during the rising edge of SCLK, then the memory contents are shifted out 4-bit per clock cycle from IO3, IO2, IO1 and IO0. The command sequence is shown in followed Figure 10. The first Byte addressed can be at any location. The address is automatically incremented to the next higher address after each Byte of data is shifted out. Figure10. Quad Output Fast Read Sequence Diagram 7.10. Dual I/O Fast Read (BBH) The Dual I/O Fast Read command is similar to the Dual Output Fast Read command but with the capability to input the 3-Byte address (A23-0) and a “Continuous Read Mode” Byte 2-bit per clock by SI and SO, and each bit is latched in on the rising edge of SCLK, then the memory contents are shifted out 2-bit per clock cycle from SI and SO. The command sequence is shown in followed Figure 11. The first Byte addressed can be at any location. The address is automatically incremented to the next higher address after each Byte of data is shiftedout. Dual I/O Fast Read with “Continuous Read Mode” The Dual I/O Fast Read command can further reduce command overhead through setting the “Continuous Read Mode” bits (M7-0) after the input 3-Byte address (A23-A0). If the “Continuous Read Mode” bits (M7-0) =AXH, then the next Dual I/O Fast Read command (after CS# is raised and then lowered) does not require the BBH command code. The command sequence is shown in followed Figure 11. If the “Continuous Read Mode” bits (M7-0) are any value other than AXH, the next command requires the first BBH command code, thus returning to normal operation. A “Continuous Read Mode” Reset command can be used to reset (M7-0) before issuing normal command. 20 ZD25Q16B 4 7 21 5 ZD25Q16B 7.11. Quad I/O Fast Read (EBH) The Quad I/O Fast Read command is similar to the Dual I/O Fast Read command but with the capability to input the 3-Byte address (A23-0) and a “Continuous Read Mode” Byte and 4-dummy clock 4-bit per clock by IO0, IO1, IO2, IO3, each bit being latched in during the rising edge of SCLK, then the memory contents are shifted out 4-bit per clock cycle from IO0, IO1, IO2, IO3. The command sequence is shown in followed Figure13. The first Byte addressed can be at any location. The address is automatically incremented to the next higher address after each Byte of data is shifted out. The Quad Enable bit (QE) of Status Register (S9) must be set to enable for the Quad I/O Fast readcommand. Quad I/O Fast Read with “Continuous Read Mode” The Quad I/O Fast Read command can further reduce command overhead through setting the “Continuous Read Mode” bits (M7-0) after the input 3-Byte address (A23-A0). If the “Continuous Read Mode” bits (M7-0) =AXH, then the next Quad I/O Fast Read command (after CS# is raised and then lowered) does not require the EBH command code. The command sequence is shown in followed Figure13. If the “Continuous Read Mode” bits (M7-0) are any value other than AXH, the next command requires the first EBH command code, thus returning to normal operation. A “Continuous Read Mode” Reset command can be used to reset (M7-0) before issuing normal command. Figure 13. Quad I/O Fast Read Sequence Diagram (M7-0= 0XH or not AXH) CS # 0 1 2 3 4 5 6 7 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 8 SCLK Command 4 0 4 0 4 0 4 0 4 0 4 0 SO( IO1) 5 1 5 1 5 1 5 1 5 1 5 1 WP#( IO2) 6 2 6 2 6 2 6 2 6 2 7 3 7 3 7 3 7 3 7 3 7 EBH SI (IO0) HOLD #( IO3) A23-16 A15-8 M7-0 A7-0 Dummy Figure14. Quad I/O Fast Read Sequence Diagram (M7-0= AXH) CS# 0 SCLK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SI(IO0) 4 0 4 0 4 0 4 0 4 0 4 0 4 SO(IO1) 5 1 5 1 5 1 5 1 5 1 5 1 5 WP # (IO2) 6 2 6 2 6 2 6 2 6 2 6 2 6 3 77 3 7 3 7 3 7 3 7 3 7 HOLD #(IO3) 7 A23- 16 A15-8 A7-0 M7-0 Dummy 22 Byte 1 Byte2 6 2 3 Byte 1 Byte2 ZD25Q16B 7.12. Quad I/O Word Fast Read (E7H) The Quad I/O Word Fast Read command is similar to the Quad I/O Fast Read command except that the lowest address bit (A0) must be equal 0 and there are only 2-dummy clock. The command sequence is shown in followed Figure15. The first Byte addressed can be at any location. The address is automatically incremented to the next higher address after each Byte of data is shifted out. The Quad Enable bit (QE) of Status Register (S9) must be set to enable for the Quad I/O Word Fast read command. Quad I/O Word Fast Read with “Continuous Read Mode” The Quad I/O Word Fast Read command can further reduce command overhead through setting the “Continuous Read Mode” bits (M7-0) after the input 3-Byte address (A23-A0). If the “Continuous Read Mode” bits (M7-0) =AXH, then the next Quad I/O Word Fast Read command (after CS# is raised and then lowered) does not require the E7H command code. The command sequence is shown in followed Figure15. If the “Continuous Read Mode” bits (M7-0) are any value other than AXH, the next command requires the first E7H command code, thus returning to normal operation. A “Continuous Read Mode” Reset command can be used to reset (M7-0) before issuing normalcommand. Figure15. Quad I/O Word Fast Read Sequence Diagram (M7-0= 0XH or not AXH) CS # 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 4 0 4 0 4 0 4 0 4 0 4 0 SO( IO1) 5 1 5 1 5 1 5 1 5 1 5 1 WP#( IO2) 6 2 6 2 6 2 6 2 6 2 6 2 7 3 7 3 7 3 7 3 7 3 3 SCLK Command E7H SI (IO0) HOLD #( IO3) A23-16 A15-8 A7-0 M7-0 Dummy Byte 1 Byte2 Figure16. Quad I/O Word Fast Read Sequence Diagram (M7-0= AXH) CS# 0 SCLK 1 2 3 4 5 6 7 8 9 10 11 12 SI(IO0) 4 0 4 0 4 0 4 0 4 0 4 0 4 SO(IO1) 5 1 5 1 5 1 5 1 5 1 5 1 5 WP # (IO2) 6 2 6 2 6 2 6 2 6 2 6 2 6 HOLD #(IO3) 7 3 7 3 7 3 7 3 7 3 7 3 7 A23- 16 A15-8 A7-0 M7-0Dummy Byte 1 Byte2 23 7 ZD25Q16B 7.13. Page Program (PP) (02H) The Page Program (PP) command is for programming the memory. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit before sending the Page Program command. The Page Program (PP) command is entered by driving CS# Low, followed by the command code, three address Bytes and at least one data Byte on SI. If the 8 least significant address bits (A7-A0) are not all zero, all transmitted data that goes beyond the end of the current page are programmed from the start address of the same page (from the address whose 8 least significant bits (A7-A0) are all zero). CS# must be driven low for the entire duration of the sequence. The Page Program command sequence: CS# goes low  sending Page Program command  3-Byte address on SI  at least 1 Byte data on SI  CS# goes high. The command sequence is shown in Figure17. If more than 256 Bytes are sent to the device, previously latched data are discarded and the last 256 data Bytes are guaranteed to be programmed correctly within the same page. If less than 256 data Bytes are sent to device, they are correctly programmed at the requested addresses without having any effects on the other Bytes of the same page. CS# must be driven high after the eighth bit of the last data Byte has been latched in; otherwise the Page Program (PP) command is notexecuted. As soon as CS# is driven high, the self-timed Page Program cycle (whose duration is tPP) is initiated. While the Page Program cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Page Program cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit isreset. A Page Program (PP) command applied to a page which is protected by the Block Protect (BP4, BP3, BP2, BP1, and BP0) is not executed. Figure17. Page Program Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 SCLK 2078 2079 2077 2076 2075 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 7 Byte1 6 5 4 3 2 1 2074 CS# 0 2073 02H SI(IO0) 2072 24-bit address 23 22 21 3 2 1 Command SCLK Byte2 SI(IO0) 7 6 5 4 3 2 1 0 7 6 5 Byte3 4 3 2 1 24 Byte256 0 7 6 5 4 3 2 1 0 0 ZD25Q16B 7.14. Quad Page Program (32H) The Quad Page Program command is for programming the memory using four pins: IO0, IO1, IO2, and IO3. To use Quad Page Program the Quad enable in status register Bit9 must be set (QE=1). A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit before sending the Page Program command. The quad Page Program command is entered by driving CS# Low, followed by the command code (32H), three address Bytes and at least one data Byte on IO pins. The command sequence is shown in Figure18. If more than 256 Bytes are sent to the device, previously latched data are discarded and the last 256 data Bytes are guaranteed to be programmed correctly within the same page. If less than 256 data Bytes are sent to device, they are correctly programmed at the requested addresses without having any effects on the other Bytes of the same page. CS# must be driven high after the eighth bit of the last data Byte has been latched in; otherwise the Quad Page Program (PP) command is not executed. As soon as CS# is driven high, the self-timed Quad Page Program cycle (whose duration is tPP) is initiated. While the Quad Page Program cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Quad Page Program cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. A Quad Page Program command applied to a page which is protected by the Block Protect (BP4, BP3, BP2, BP1, and BP0) is not executed. Figure18.Quad Page Program Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 28 29 30 31 32 33 34 35 36 37 38 39 9 10 SCLK 24- bit address Command SI(IO0) 32H 23 22 21 3 Byte1 Byte2 2 1 0 0 4 0 4 0 4 0 55 1 5 1 5 1 5 1 WP#(IO2) 6 2 6 2 6 2 6 2 HOLD#(IO3) 7 3 7 3 7 3 7 3 SO(IO1) 4 CS# SCLK 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 Byte11 Byte12 Byte253 Byte256 SI(IO0) 4 0 4 0 4 0 4 0 4 0 4 0 4 0 4 0 4 0 4 0 4 0 4 0 SO(IO1) 6 1 5 1 5 1 5 1 5 1 5 1 5 1 5 1 5 1 5 1 5 1 5 1 5 2 6 2 6 2 6 2 6 2 6 2 6 2 6 2 6 2 6 2 6 2 6 2 7 3 7 3 7 3 7 3 7 3 7 3 7 3 7 3 7 3 7 3 7 3 7 3 WP#(IO2) HOLD#(IO3) 25 ZD25Q16B 7.15. Sector Erase (SE) (20H) The Sector Erase (SE) command is used to erase all the data of the chosen sector. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit. The Sector Erase (SE) command is entered by driving CS# low, followed by the command code, and 3-address Byte on SI. Any address inside the sector is a valid address for the Sector Erase (SE) command. CS# must be driven low for the entire duration of the sequence. The Sector Erase command sequence: CS# goes low  sending Sector Erase command  3-Byte address on SI  CS# goes high. The command sequence is shown in Figure19. CS# must be driven high after the eighth bit of the last address Byte has been latched in; otherwise the Sector Erase (SE) command is not executed. As soon as CS# is driven high, the self-timed Sector Erase cycle (whose duration is tSE) is initiated. While the Sector Erase cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Sector Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. A Sector Erase (SE) command applied to a sector which is protected by the Block Protect (BP4, BP3, BP2, BP1, and BP0) bit (see Table1&1a) is not executed. Figure19. Sector Erase Sequence Diagram CS# SCLK 0 1 2 3 4 5 6 7 8 9 Command SI 29 30 31 24-bit address 20H 23 22 2 1 0 7.16. 32KB Block Erase (BE) (52H) The 32KB Block Erase (BE) command is used to erase all the data of the chosen block. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit. The 32KB Block Erase (BE) command is entered by driving CS# low, followed by the command code, and three address Bytes on SI. Any address inside the block is a valid address for the 32KB Block Erase (BE) command. CS# must be driven low for the entire duration of the sequence. The 32KB Block Erase command sequence: CS# goes low  sending 32KB Block Erase command  3-Byte address on SI  CS# goes high. The command sequence is shown in Figure20. CS# must be driven high after the eighth bit of the last address Byte has been latched in; otherwise the 32KB Block Erase (BE) command is not executed. As soon as CS# is driven high, the self-timed Block Erase cycle (whose duration is tBE) is initiated. While the Block Erase cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. A 32KB Block Erase (BE) command applied to a block which is protected by the Block Protect (BP4, BP3, BP2, BP1, and BP0) bits (see Table1&1a) is notexecuted. Figure20. 32KB Block Erase Sequence Diagram CS # 0 1 2 3 4 5 6 7 8 9 29 30 31 SCLK Command SI 52H 24-bit address 23 22 MSB 26 2 1 0 ZD25Q16B 7.17. 64KB Block Erase (BE) (D8H) The 64KB Block Erase (BE) command is used to erase all the data of the chosen block. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit. The 64KB Block Erase (BE) command is entered by driving CS# low, followed by the command code, and three address Bytes on SI. Any address inside the block is a valid address for the 64KB Block Erase (BE) command. CS# must be driven low for the entire duration of the sequence. The 64KB Block Erase command sequence: CS# goes low  sending 64KB Block Erase command  3-Byte address on SI  CS# goes high. The command sequence is shown in Figure21. CS# must be driven high after the eighth bit of the last address Byte has been latched in; otherwise the 64KB Block Erase (BE) command is not executed. As soon as CS# is driven high, the self-timed Block Erase cycle (whose duration is tBE) is initiated. While the Block Erase cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. A 64KB Block Erase (BE) command applied to a block which is protected by the Block Protect (BP4, BP3, BP2, BP1, and BP0) bits (see Table1&1a) is not executed. Figure21. 64KB Block Erase Sequence Diagram CS # 0 SCLK 1 2 3 4 5 6 7 8 9 Command SI 29 30 31 24-bit address D8H 23 22 2 1 0 MSB 7.18. Chip Erase (CE) (60/C7H) The Chip Erase (CE) command is used to erase all the data of the chip. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit .The Chip Erase (CE) command is entered by driving CS# Low, followed by the command code on Serial Data Input (SI). CS# must be driven Low for the entire duration of the sequence. The Chip Erase command sequence: CS# goes low  sending Chip Erase command  CS# goes high. The command sequence is shown in Figure22. CS# must be driven high after the eighth bit of the command code has been latched in; otherwise the Chip Erase command is not executed. As soon as CS# is driven high, the self-timed Chip Erase cycle (whose duration is tCE) is initiated. While the Chip Erase cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Chip Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. The Chip Erase (CE) command is executed if the Block Protect (BP2, BP1, and BP0) bits are 0 and CMP=0 or the Block Protect (BP2, BP1, and BP0) bits are 1 and CMP=1. The Chip Erase (CE) command is ignored if one or more sectors are protected. Figure22. Chip Erase Sequence Diagram CS# SCLK 0 1 2 3 4 Command SI 60H or C7H 27 5 6 7 ZD25Q16B 7.19. Deep Power-Down (DP) (B9H) Executing the Deep Power-Down (DP) command is the only way to put the device in the lowest consumption mode (the Deep Power-Down Mode). It can also be used as an extra software protection mechanism, while the device is not in active use, since in this mode, the device ignores all Write, Program and Erase commands. Driving CS# high deselects the device, and puts the device in the Standby Mode (if there is no internal cycle currently in progress). But this mode is not the Deep Power-Down Mode. The Deep Power-Down Mode can only be entered by executing the Deep Power-Down (DP) command. Once the device has entered the Deep Power-Down Mode, all commands are ignored except the Release from Deep Power-Down and Read Device ID (RDI) command. These commands can release the device from this mode. The Release from Deep Power-Down and Read Device ID (RDI) command releases the device from deep power down mode , also allows the Device ID of the device to be output on SO. The Deep Power-Down Mode automatically stops at Power-Down, and the device is in the Standby Mode after PowerUp. The Deep Power-Down command sequence: CS# goes low  sending Deep Power-Down command  CS# goes high. The command sequence is shown in Figure23. CS# must be driven high after the eighth bit of the command code has been latched in; otherwise the Deep Power-Down (DP) command is not executed. As soon as CS# is driven high, it requires a delay of tDP before the supply current is reduced to ICC2 and the Deep Power-Down Mode is entered. Any Deep PowerDown (DP) command, while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress. Figure23. Deep Power-Down Sequence Diagram CS # tDP SCLK Command SI Standby mode B9H 28 Deep power-down mode ZD25Q16B 7.20. Release from Deep Power-Down or High Performance Mode and Read Device ID (RDI) (ABH) The Release from Power-Down or High Performance Mode / Device ID command is a multi-purpose command. It can be used to release the device from the Power-Down state or High Performance Mode or obtain the devices electronic identification (ID) number. To release the device from the Power-Down state or High Performance Mode, the command is issued by driving the CS# pin low, shifting the instruction code “ABH” and driving CS# high as shown in Figure24. Release from Power-Down will take the time duration of tRES1 (See AC Characteristics) before the device will resume normal operation and other c omma nd are accepted. The CS# pin must remain high during the tRES1 time duration. When used only to obtain the Device ID while not in the Power-Down state, the command is initiated by driving the CS# pin low and shifting the instruction code “ABH” followed by 3-dummy Byte. The Device ID bits are then shifted out on the falling edge of SCLK with most significant bit (MSB) first as shown in Figure25. The Device ID value is listed in Manufacturer and Device Identification table. The Device ID can be read continuously. The command is completed by driving CS# high. When used to release the device from the Power-Down state and obtain the Device ID, the command is the same as previously described, and shown in Figure25, except that after CS# is driven high it must remain high for a time duration of tRES2 (See AC Characteristics). After this time duration the device will resume normal operation and other command will be accepted. If the Release from Power-Down / Device ID command is issued while an Erase, Program or Write cycle is in process (when WIP equal 1) the command is ignored and will not have any effects on the current cycle. Figure24. Release Power-Down Sequence or High Performance Mode Sequence Diagram CS# SCLK 0 1 2 4 5 6 7 29 30 31 32 33 34 35 36 37 38 8 9 tRES2 3 Dummy Bytes Command SI SO 3 23 22 ABH 2 1 0 MSB High-Z 7 MSB 6 Electronic SignatureOut 5 4 3 2 1 0 Deep Power- down mode Figure 25. Release Power-Down/Read Device ID Sequence Diagram CS# SCLK 0 1 2 3 4 5 6 tRES1 7 Command SI ABH Deep Power - down mode 29 Stand-by mode Standby Mode ZD25Q16B 7.21. Read Manufacture ID/ Device ID (REMS) (90H) The Read Manufacturer/Device ID command is an alternative to the Release from Power-Down / Device ID command that provides both the JEDEC assigned Manufacturer ID and the specific DeviceID. The command is initiated by driving the CS# pin low and shifting the command code “90H” followed by a 24-bit address (A23-A0) of 000000H. After which, the Manufacturer ID and the Device ID are shifted out on the falling edge of SCLK with most significant bit (MSB) first as shown in Figure26. If the 24-bit address is initially set to 000001H, the Device ID will be read first. Figure26. Read Manufacture ID/ Device ID Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 28 29 30 31 9 10 SCLK 2dummy byte and 1 address byte 23 22 21 3 2 Command SI 90H SO High-Z CS# SCLK SI SO Device ID ManufactureID 7 6 MSB 5 4 3 2 1 0 7 6 MSB 30 5 4 3 2 1 0 1 0 ZD25Q16B 7.22. Read Identification (RDID) (9FH) The Read Identification (RDID) command allows the 8-bit manufacturer identification to be read, followed by two Bytes of device identification. The device identification indicates the memory type in the first Byte, and the memory capacity of the device in the second Byte. The Read Identification (RDID) command while an Erase or Program cycle is in progress is not decoded, and has no effect on the cycle that is in progress. The Read Identification (RDID) command should not be issued while the device is in Deep Power-Down Mode. The device is first selected by driving CS# low. Then, the 8-bit command code for the command is shifted in. This is followed by the 24-bit device identification, stored in the memory, Each bit is shifted out on the falling edge of Serial Clock. The command sequence is shown in Figure27. The Read Identification (RDID) command is terminated by driving CS# high at any time during data output. When CS# is driven high, the device is in the Standby Mode. Once in the Standby Mode, the device waits to be selected, so that it can receive, decode and executecommands. Figure27. Read Identification ID Sequence Diagram CS# SCLK SI 0 1 2 3 4 5 6 7 8 9FH SO CS# SCLK 9 10 11 12 13 14 15 7 MSB 6 ManufacturerID 5 4 3 2 1 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 SI SO MemoryType ID 7 6 5 4 3 2 1 MSB 0 7 6 MSB 31 CapacityID 5 4 3 2 1 0 0 ZD25Q16B 7.23. Continuous Read Mode Reset (CRMR) (FFH) The Dual/Quad I/O Fast Read operations, “Continuous Read Mode” bits (M7-0) are implemented to further reduce command overhead. By setting the (M7-0) to AXH, the next Dual/Quad I/O Fast Read operations do not require the BBH/EBH/E7H command code. Because the ZD25Q16B has no hardware reset pin, so if Continuous Read Mode bits are set to “AXH”, the ZD25Q16B will not recognize any standard SPI commands. So Continuous Read Mode Reset command will release the Continuous Read Mode from the “AXH” state and allow standard SPI command to be recognized. The command sequence is show in Figure29. Figure 28. Continuous Read Mode Reset Sequence Diagram CS # 0 1 2 3 4 SCLK Command SI FFH SO High-Z 32 5 6 7 ZD25Q16B 7.24. Read Unique ID (4BH) The Read Unique ID command accesses a factory-set read-only 128bit number that is unique to each ZD25Q16B device. The Unique ID can be used in conjunction with user software methods to help prevent copying or cloning of a system. The Read Unique ID command sequence: CS# goes low  sending Read Unique ID command Dummy Byte1 Dummy Byte2 Dummy Byte3 Dummy Byte4128bit Unique ID Out CS# goes high. The command sequence is show below. Figure 29. Read Unique ID Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 SCLK 3 bytes dummy Command SI SO 4BH High-Z CS# 32 33 34 35 36 37 38 39 40 41 42 43 164 165 166 SCLK DummyByte SI 128 bit unique serialnumber SO 127 126 125 124 MSB 3 2 1 0 7.25. Program/Erase Suspend (PES) (75H) The Program/Erase Suspend command “75H”, allows the system to interrupt a page program or sector/block erase operation and then read data from any other sector or block. The Write Status Register command (01H) and Erase/Program Security Registers command (44H,42H) and Erase commands (20H, 52H, D8H, C7H, 60H) and Page Program command (02H / 32H) are not allowed during Program suspend. The Write Status Register command (01H/31H/11H) and Erase Security Registers command (44H) and Erase commands (20H, 52H, D8H, C7H, 60H) are not allowed during Erase suspend. Program/Erase Suspend is valid only during the page program or sector/block erase operation. A maximum of time of “tsus” (See AC Characteristics) is required to suspend the program/erase operation. The Program/Erase Suspend command will be accepted by the device only if the SUS bit in the Status Register equal to 0 and WIP bit equal to 1 while a Page Program or a Sector or Block Erase operation is on-going. If the SUS bit equal to 1 or WIP bit equal to 0, the Suspend command will be ignored by the device. The WIP bit will be cleared from 1 to 0 within “tsus” and the SUS bit will be set from 0 to 1 immediately after Program/Erase Suspend. A power-off during the suspend period will reset the device and release the suspend state. The command sequence is show in Figure31. 33 ZD25Q16B Figure 30. Program/Erase Suspend Sequence Diagram CS # tSUS SCLK Command SI SO 75 H High-Z Accept read command 7.26. Program/Erase Resume (PER) (7AH) The Program/Erase Resume command must be written to resume the program or sector/block erase operation after a Program/Erase Suspend command. The Program/Erase Resume command will be accepted by the device only if the SUS bit equal to 1 and the WIP bit equal to 0. After issued the SUS bit in the status register will be cleared from 1 to 0 immediately, the WIP bit will be set from 0 to 1 within 200ns and the Sector or Block will complete the erase operation or the page will complete the program operation. The Program/Erase Resume command will be ignored unless a Program/Erase Suspend is active. The command sequence is show in Figure32. Figure 31. Program/Erase Resume Sequence Diagram CS # SCLK Command SI 7AH Resume Erase/Program 7.27. Erase Security Registers (44H) The ZD25Q16B provides four 256-Byte Security Registers which can be read and programmed individually. These registers may be used by the system manufacturers to store security and other important information separately from the main memory array. The Erase Security Registers command is similar to Sector/Block Erase command. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit. The Erase Security Registers command sequence: CS# goes low  sending Erase Security Registers command  3-Byte address on SI CS# goes high. The command sequence is shown in Figure33. CS# must be driven high after the eighth bit of the command code has been latched in, otherwise the Erase Security Registers command is not executed. As soon as CS# is driven high, the self-timed Erase Security Registers cycle (whose duration is tSE) is initiated. While the Erase Security Registers cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Erase Security Registers cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. The Security RegistersLock Bit (LB) in the Status Register can be used to OTP protect the security registers. Once the LB bit is set to 1, the Security Registers will be permanently locked; the Erase Security Registers command will be ignored. 34 ZD25Q16B Address Security Registers A23-A16 00H A15-A8 00H A7-A0 Don’t Care Figure32. Erase Security Registers command Sequence Diagram CS# 0 SCLK 1 2 6 4 5 3 7 8 9 Command 24 bit address 44H SI 29 30 31 23 22 1 2 0 7.28. Program Security Registers (42H) The Program Security Registers command is similar to the Page Program command. Each security register contains one pages content. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit before sending the Program Security Registers command. The Program Security Registers command is entered by driving CS# Low, followed by the command code (42H), three address Bytes and at least one data Byte on SI. As soon as CS# is driven high, the self-timed Program Security Registers cycle (whose duration is tPP) is initiated. While the Program Security Registers cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Program Security Registers cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit isreset. If the Security Registers Lock Bit (LB) is set to 1, the Security Registers will be permanently locked. Program Security Registers command will be ignored. Address A23-A16 A15-A8 A7-A0 Security Registers 0 00H 00H Byte Address Security Registers 1 00H 01H Byte Address Security Registers 2 00H 02H Byte Address Security Registers 3 00H 03H Byte Address Figure33. Program Security Registers command Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 SCLK 2078 2079 2077 2076 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 7 2075 CS# 0 Byte1 6 5 4 3 2 1 2074 42H SI(IO0) 2073 24-bit address 23 22 21 3 2 1 2072 Command SCLK Byte2 SI(IO0) 7 6 5 4 3 2 1 0 7 Byte3 6 5 4 3 2 1 35 Byte256 0 7 6 5 4 3 2 1 0 0 ZD25Q16B 7.29. Read Security Registers (48H) The Read Security Registers command is similar to Fast Read command. The command is followed by a 3-Byte address (A23-A0) and a dummy Byte, and each bit is latched-in on the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO, and each bit is shifted out, at a Max frequency fC, on the falling edge of SCLK. The first Byte addressed can be at any location. The address is automatically incremented to the next higher address after each Byte of data is shifted out. Once the A7-A0 address reaches the last Byte of the register (Byte FFH), it will reset to 00H, the command is completed by driving CS# high. Address A23-A16 A15-A8 A7-A0 Security Registers 0 00H 00H Byte Address Security Registers 1 00H 01H Byte Address Security Registers 2 00H 02H Byte Address Security Registers 3 00H 03H Byte Address Figure34. Read Security Registers command Sequence Diagram CS# 0 SCLK 1 2 3 4 5 6 9 10 7 8 24- bitaddress Command SI 28 29 30 31 23 22 21 48H 3 2 1 0 High -Z SO CS# SCLK 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 DummyByte SI SO 7 6 5 4 3 2 1 0 Data Out2 Data Out1 7 6 5 4 3 2 1 0 7 6 MSB MSB 36 5 ZD25Q16B 7.30. Enable Reset (66H) and Reset (99H) If the Reset command is accepted, any on-going internal operation will be terminated and the device will return to its default power-on state and lose all the current volatile settings, such as Volatile Status Register bits, Write Enable Latch status (WEL), Program/Erase Suspend status, Read Parameter setting (P7-P0), Continuous Read Mode bit setting (M7M0) and Wrap Bit Setting (W6-W4). The “Reset (99H)” command sequence as follow: CS# goes low  Sending Enable Reset command  CS# goes high  CS# goes low  Sending Reset command  CS# goes high. Once the Reset command is accepted by the device, the device will take approximately tRST = 30us / 4ms to reset. During this period, no command will be accepted. Data corruption may happen if there is an on-going or suspended internal Erase or Program operation when Reset command sequence is accepted by the device. It is recommended to check the BUSY bit and the SUS bit in Status Register before issuing the Reset command sequence. Figure35. Enable Reset and Reset command Sequence Diagram CS# 0 1 2 3 4 5 0 6 7 1 2 3 4 5 6 7 SCLK Command SI Command 66H 99H High-Z SO 7.31. Read Serial Flash Discoverable Parameter (5AH) The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the functional and feature capabilities of serial flash devices in a standard set of internal parameter tables. These parameter tables can be interrogated by host system software to enable adjustments needed to accommodate divergent features from multiple vendors. The concept is similar to the one found in the Introduction of JEDEC Standard, JESD68 on CFI. SFDP is a standard of JEDEC Standard No.216. Figure36. Read Serial Flash Discoverable Parameter command Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 SCLK Command SI 5AH SO High-Z CS# 24-bit address 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK Command SI SO 7 6 5 4 3 2 1 0 Data Out2 Data Out1 7 6 5 37 4 3 2 1 0 7 6 5 ZD25Q16B Table3. Signature and Parameter Identification Data Values Description SFDP Signature Comment Fixed:50444653H Add(H) DW Add Data Data (Byte) (Bit) 00H 07:00 53H 53H 01H 15:08 46H 46H 02H 23:16 44H 44H 03H 31:24 50H 50H SFDP Minor Revision Number Start from 00H 04H 07:00 06H 06H SFDP Major Revision Number Start from 01H 05H 15:08 01H 01H Number of Parameters Headers Start from 00H 06H 23:16 01H 01H Unused Contains 0xFFH and can never 07H 31:24 FFH FFH 08H 07:00 00H 00H Start from 0x00H 09H 15:08 06H 06H Start from 0x01H 0AH 23:16 01H 01H Parameter Table Length How many DWORDs in the 0BH 31:24 09H 09H (in double word) Parameter table Parameter Table Pointer (PTP) First address of JEDEC Flash 0CH 07:00 30H 30H Parameter table 0DH 15:08 00H 00H 0EH 23:16 00H 00H 0FH 31:24 FFH FFH 10H 07:00 BAH BAH be changed ID number (JEDEC) 00H: It indicates a JEDEC specified header Parameter Table Minor Revision Number Parameter Table Major Revision Number Unused Contains 0xFFH and can never be changed ID Number It is indicates Zetta Device (Zetta Device Manufacturer ID) manufacturer ID Parameter Table Minor Start from 0x00H 11H 15:08 00H 00H Start from 0x01H 12H 23:16 01H 01H Parameter Table Length How many DWORDs in the 13H 31:24 03H 03H (in double word) Parameter table Parameter Table Pointer (PTP) First address of Zetta 14H 07:00 90H 90H Device Flash Parameter 15H 15:08 00H 00H table 16H 23:16 00H 00H Contains 0xFFH and can never 17H 31:24 FFH FFH Revision Number Parameter Table Major Revision Number Unused be changed 38 ZD25Q16B Table4. Parameter Table (0): JEDEC Flash Parameter Tables Description Comment Add(H) DW Add (Byte) (Bit) Data Data 00: Reserved; 01: 4KB erase; Block/Sector Erase Size 10: Reserved; 01:00 01b 02 1b 03 0b 11: not support 4KB erase Write Granularity Write Enable Instruction Requested for Writing to Volatile Status Registers 0: 1Byte, 1: 64Byte or larger 0: Nonvolatile status bit 1: Volatile status bit (BP status register bit) 30H 0: Use 50H Opcode, 1: Write Enable Opcode Select for Use 06H Opcode, Writing to Volatile Status Registers Note: If target flash status E5H 04 0b 07:05 111b 15:08 20H 16 1b 18:17 00b 19 0b 20 1b register is Nonvolatile, then bits 3 and 4 must be set to 00b. Unused Contains 111b and can never be changed 4KB Erase Opcode 31H (1-1-2) Fast Read 0=Not support, 1=Support Address Bytes Number used in 00: 3Byte only, 01: 3 or 4Byte, addressing flash array 10: 4Byte only, 11: Reserved Double Transfer Rate (DTR) clocking 0=Not support, 1=Support 32H (1-2-2) Fast Read 0=Not support, 1=Support (1-4-4) Fast Read 0=Not support, 1=Support 21 1b (1-1-4) Fast Read 0=Not support, 1=Support 22 1b 23 1b 31:24 FFH 31:00 00FFFFFFH Unused Unused 33H 37H:34 Flash Memory Density H (1-4-4) Fast Read Number of 00000b: Wait states (Dummy Wait states Clocks) not support (1-4-4) Fast Read Number of Mode Bits 04:00 (1-4-4) Fast Read Opcode 39H (1-1-4) Fast Read Number of 0 0000b: Wait states (Dummy Wait states Clocks) not support (1-1-4) Fast Read Number of Mode Bits (1-1-4) Fast Read Opcode 3BH 39 FFH 44H 07:05 010b 15:08 EBH 20:16 01000b 3AH 000b:Mode Bits not support F1H 00100b 38H 000b:Mode Bits not support 20H EBH 08H 23:21 000b 31:24 6BH 6BH ZD25Q16B Description Comment (1-1-2) Fast Read Number of 0 0000b: Wait states (Dummy Wait states Clocks) not support (1-1-2) Fast Read Number of Mode Bits of Wait states Clocks) not support 1=support Unused 0=not support 01000b 07:05 000b 15:08 3BH 40H 1=support Unused 3BH 00000b 3EH 3FH Data 08H 20:16 000b: Mode Bits not support 0=not support Data 3CH (1-2-2) Fast Read Opcode (4-4-4) Fast Read (Bit) 3DH 0 0000b: Wait states (Dummy (2-2-2) Fast Read (Byte) 000b: Mode Bits not support (1-2-2) Fast Read Number of Mode Bits DW Add 04:00 (1-1-2) Fast Read Opcode (1-2-2) Fast Read Number Add(H) 80H 23:21 100b 31:24 BBH 00 0b 03:01 111b 04 0b 07:05 111b BBH EEH Unused 43H:41H 31:08 0xFFH 0xFFH Unused 45H:44H 15:00 0xFFH 0xFFH 20:16 00000b (2-2-2) Fast Read Number 0 0000b: Wait states (Dummy of Wait states Clocks) not support (2-2-2) Fast Read Number of Mode Bits 46H 000b: Mode Bits not support (2-2-2) Fast Read Opcode Unused (4-4-4) of Fast Read Number Wait states (4-4-4) Fast Read Number of Mode Bits Sector/block size=2^N Bytes 0x00b: this sector type don’t exist Sector/block size=2^N Bytes 0x00b: this sector type don’t exist Sector Type 2 erase Opcode Sector Type 3 Size Sector/block size=2^N Bytes 0x00b: this sector type don’t exist Sector Type 3 erase Opcode Sector Type 4 Size 47H 31:24 FFH 49H:48H 15:00 0xFFH 20:16 00000b 000b: Mode Bits not support Sector Type 1 erase Opcode Sector Type 2 Size 000b 4AH (4-4-4) Fast Read Opcode Sector Type 1 Size 23:21 0 0000b: Wait states (Dummy Clocks) not support 00H Sector/block size=2^N Bytes 0x00b: this sector type don’t exist Sector Type 4 erase Opcode 40 FFH 0xFFH 00H 23:21 000b 4BH 31:24 FFH FFH 4CH 07:00 0CH 0CH 4DH 15:08 20H 20H 4EH 23:16 0FH 0FH 4FH 31:24 52H 52H 50H 07:00 10H 10H 51H 15:08 D8H D8H 52H 23:16 00H 00H 53H 31:24 FFH FFH ZD25Q16B Table5. Parameter Table (1): Zetta Device Flash Parameter Tables Description Comment 2000H=2.000V Vcc Supply Maximum Voltage Add(H) DW Add (Byte) (Bit) 61H:60 2700H=2.700V H 3600H=3.600V Data Data 15:00 3600H 3600H 31:16 2700H 2700H 1650H=1.650V Vcc Supply Minimum Voltage 2250H=2.250V 63H:62 2300H=2.300V H 2700H=2.700V HW Reset# pin 0=not support 1=support 00 0b HW Hold# pin 0=not support 1=support 01 1b Deep Power Down Mode 0=not support 1=support 02 1b SW Reset 0=not support 1=support 03 1b Should be issu Reset Enable(66H) SW Reset Opcode 65H:64 before Reset cmd. 11:04 99H H 799EH Program Suspend/Resume 0=not support 1=support 12 1b Erase Suspend/Resume 0=not support 1=support 13 1b 14 1b 15 0b 66H 23:16 FFH FFH 67H 31:24 64H 64H 1=support 00 0b 1=Nonvolatile 01 0b 09:02 FFH 10 0b 11 1b Unused Wrap-Around Read mode Wrap-Around Read 0=not support 1=support mode Opcode 08H:support 8B wrap-around read 16H:8B&16B Wrap-Around Read data length 32H:8B&16B&32B 64H:8B&16B&32B&64B Individual block lock Individual block lock bit (Volatile/Nonvolatile) 0=not support 0=Volatile Individual block lock Opcode Individual block lock Volatile protect bit default protect status 0=protect 1=unprotect 6BH:68 Secured OTP 0=not support 1=support Read Lock 0=not support 1=support 12 0b Permanent Lock 0=not support 1=support 13 1b Unused 15:14 11b Unused 31:16 FFFFH H 41 EBFCH FFFFH ZD25Q16B 8. ELECTRICAL CHARACTERISTICS 8.1. POWER-ON TIMING Vcc(max) Chip Selection is not allowed Vcc(min) tVSL Device is fully accessible VWI Time Table6. Power-Up Timing and Write Inhibit Threshold Symbol Parameter Min. tVSL VCC (min) To CS# Low 1.8 VWI Write Inhibit Voltage 1.5 Max. Unit ms 2.5 V 8.2. INITIAL DELIVERY STATE The device is delivered with the memory array erased: all bits are set to 1(each Byte contains FFH).The Status Register contains 00H (all Status Register bits are 0). 8.3. ABSOLUTE MAXIMUM RATINGS Parameter Ambient Operating Temperature Value Unit -40 to 85 ℃ -40 to 105 Storage Temperature -65 to 150 Applied Input / Output Voltage -0.6 to VCC+0.4 V Transient Input / Output Voltage(note: overshoot) -2.0 to VCC+2.0 V -0.6 to 4.2 V VCC 42 ℃ ZD25Q16B Figure38. Maximum Negative and Positive Overshoot Waveform Maximum NegativeOvershoot Waveform 20ns Maximum Positive Overshoot Waveform 20ns 20ns Vss Vcc + 2.0V Vss-2.0V 20ns Vcc 20ns Symbol Parameter CIN Input Capacitance COUT Output Capacitance CL Load Capacitance Min. Typ. Max. Unit pF VIN=0V 8 pF VOUT=0V pF 5 ns Input Pulse Voltage 0.1VCC to 0.8VCC V Input Timing Reference Voltage 0.2VCC to 0.7VCC V Output Timing Reference Voltage 0.5VCC 43 Conditions 6 30 Input Rise And Fall time 20ns V ZD25Q16B 8.5. DC CHARACTERISTICS (T= -40℃~85℃, VCC=2.7~3.6V) Symbol Parameter Test Condition Min. Typ. Max. Unit. ILI Input Leakage Current ±2 μA ILO Output Leakage Current ±2 μA ICC1 Standby Current CS#=VCC, 8 μA VIN=VCC or VSS ICC2 Deep Power-Down Current CS#=VCC, 0.65 22 μA 3.1 4.2 mA 2.2 3.2 mA VIN=VCC or VSS CLK=0.1VCC / 0.9VCC at 120MHz, ICC3 Operating Current (0B Read) Q=Open(*1,*2,*4 I/O) CLK=0.1VCC / 0.9VCC at 80MHz, Q=Open(*1,*2,*4 I/O) ICC4 Operating Current (PP) CS#=VCC 3 mA ICC5 Operating Current (WRSR) CS#=VCC 3 mA ICC6 Operating Current (SE) CS#=VCC 2 mA ICC7 Operating Current (BE) CS#=VCC 2 mA ICC8 Operating Current (CE) CS#=VCC 2 mA VIL Input Low Voltage 0.2VCC V VIH Input High Voltage VOL Output Low Voltage IOL =100μA VOH Output High Voltage IOH =-100μA 0.7VCC V 0.2 VCC-0.2 Note: 1. Typical values given for TA=25°C. 2. Value guaranteed by design and/or characterization, not 100% tested inproduction. 44 V V ZD25Q16B (T= -40℃~105℃, VCC=2.7~3.6V) Symbol Parameter Test Condition Min. Typ. Max. Unit. ILI Input Leakage Current ±2 μA ILO Output Leakage Current ±2 μA ICC1 Standby Current CS#=VCC, 8 μA VIN=VCC or VSS ICC2 Deep Power-Down Current CS#=VCC, 0.65 25 μA 3.1 4.2 mA 2.2 3.2 mA VIN=VCC or VSS CLK=0.1VCC / 0.9VCC at 120MHz, ICC3 Operating Current (0B Read) Q=Open(*1,*2,*4 I/O) CLK=0.1VCC / 0.9VCC at 80MHz, Q=Open(*1,*2,*4 I/O) ICC4 Operating Current (PP) CS#=VCC 3.5 mA ICC5 Operating Current (WRSR) CS#=VCC 3.5 mA ICC6 Operating Current (SE) CS#=VCC 2.5 mA ICC7 Operating Current (BE) CS#=VCC 2.5 mA ICC8 Operating Current (CE) CS#=VCC 2.5 mA VIL Input Low Voltage 0.2VCC V VIH Input High Voltage VOL Output Low Voltage IOL =100μA VOH Output High Voltage IOH =-100μA 0.7VCC 0.2 VCC-0.2 Note: 1. V Typical values given for TA=25°C. Value guaranteed by design and/or characterization, not 100% tested inproduction 45 V V ZD25Q16B 8.6. AC CHARACTERISTICS (T= -40℃~85℃, VCC=2.7~3.6V, CL=30pf) Symbol Parameter Min. Typ. Max. Unit. 104 MHz 80 MHz 120 MHz 120 MHz 80 MHz Serial Clock Frequency For: Dual I/O(BBH), Quad I/O (EBH), FC Quad Output (6BH) (Dual I/O & Quad I/O Without High Performance Mode), on 3.0V-3.6V power supply Serial Clock Frequency For: Dual I/O(BBH), Quad I/O fC1 (EBH), Quad Output (6BH) (Dual I/O & Quad I/O Without High Performance Mode), on 2.7V-3.0V power supply Serial Clock Frequency For: Dual I/O(BBH), Quad I/O fC2 (EBH), Quad Output (6BH) (Dual I/O & Quad I/O With High Performance Mode), on 2.7V-3.6V power supply Serial Clock Frequency For: Fast Read (0BH), Write Status fC3 Register (01H) with or without High Performance Mode on 2.7V-3.6V power supply fR Serial Clock Frequency For: Read (03H) Read ID (90H, 9FH and ABH), Read Status Register (05H and 35H) tCLH Serial Clock High Time 4 ns tCLL Serial Clock Low Time 4 ns tCLCH Serial Clock Rise Time (Slew Rate) 0.1 V/ns tCHCL Serial Clock Fall Time (Slew Rate) 0.1 V/ns tSLCH CS# Active Setup Time 5 ns tCHSH CS# Active Hold Time 5 ns tSHCH CS# Not Active Setup Time 5 ns tCHSL CS# Not Active Hold Time 5 ns tSHSL CS# High Time (Read/Write) 20 ns tSHQZ Output Disable Time tCLQX Output Hold Time 1.2 ns tDVCH Data In Setup Time 2 ns tCHDX Data In Hold Time 2 ns tHLCH HOLD# Low Setup Time (Relative To Clock) 5 ns tHHCH HOLD# High Setup Time (Relative To Clock) 5 ns tCHHL HOLD# High Hold Time (Relative To Clock) 5 ns tCHHH HOLD# Low Hold Time (Relative To Clock) 5 ns tHLQZ HOLD# Low To High-Z Output 6 ns tHHQX HOLD# High To Low-Z Output 6 ns tCLQV Clock Low To Output Valid 7 ns tWHSL Write Protect Setup Time Before CS# Low 20 ns tSHWL Write Protect Hold Time After CS# High 100 ns tDP 6 CS# High To Deep Power-Down Mode 25 46 ns μs ZD25Q16B tRES1 tRES2 CS# High To Standby Mode Without Electronic Signature Read CS# High To Standby Mode With Electronic Signature Read tSUS CS# High To Next Command After Suspend tRS Latency Between Resume And Next Suspend μs 25 μs 20 μs 100 μs CS# High To Next Command After Reset (Except From tRST 25 WRSR) CS# High To Next Command After Reset (From WRSR) 30 μs 4 ms tW Write Status Register Cycle Time 2.6 4 ms tPP Page Programming Time 1.1 1.6 ms tSE Sector Erase Time (4K Bytes) 5.1 7.6 ms tBE1 Block Erase Time (32K Bytes) 5.1 7.6 ms tBE2 Block Erase Time (64K Bytes) 5.1 7.6 ms tCE Chip Erase Time (ZD25Q16B) 5.2 7.8 ms Note: 1. Typical values given for TA=25°C. 2. Value guaranteed by design and/or characterization, not 100% tested inproduction 47 ZD25Q16B Symbol Parameter Min. Typ. Max. Unit. 70 MHz 60 MHz 80 MHz 70 MHz 80 MHz Serial Clock Frequency For: Dual I/O(BBH), Quad I/O (EBH), FC Quad Output (6BH) (Dual I/O & Quad I/O Without High Performance Mode), on 3.0V-3.6V power supply Serial Clock Frequency For: Dual I/O(BBH), Quad I/O fC1 (EBH), Quad Output (6BH) (Dual I/O & Quad I/O Without High Performance Mode), on 2.7V-3.0V power supply Serial Clock Frequency For: Dual I/O(BBH), Quad I/O fC2 (EBH), Quad Output (6BH) (Dual I/O & Quad I/O With High Performance Mode), on 2.7V-3.6V power supply Serial Clock Frequency For: Fast Read (0BH), Write Status fC3 Register (01H) with or without High Performance Mode on 2.7V-3.6V power supply fR Serial Clock Frequency For: Read (03H) Read ID (90H, 9FH and ABH), Read Status Register (05H and 35H) tCLH Serial Clock High Time 4 ns tCLL Serial Clock Low Time 4 ns tCLCH Serial Clock Rise Time (Slew Rate) 0.2 V/ns tCHCL Serial Clock Fall Time (Slew Rate) 0.2 V/ns tSLCH CS# Active Setup Time 5 ns tCHSH CS# Active Hold Time 5 ns tSHCH CS# Not Active Setup Time 5 ns tCHSL CS# Not Active Hold Time 5 ns tSHSL CS# High Time (Read/Write) 20 ns tSHQZ Output Disable Time tCLQX Output Hold Time 1.2 ns tDVCH Data In Setup Time 2 ns tCHDX Data In Hold Time 2 ns tHLCH HOLD# Low Setup Time (Relative To Clock) 5 ns tHHCH HOLD# High Setup Time (Relative To Clock) 5 ns tCHHL HOLD# High Hold Time (Relative To Clock) 5 ns tCHHH HOLD# Low Hold Time (Relative To Clock) 5 ns tHLQZ HOLD# Low To High-Z Output 6 ns tHHQX HOLD# High To Low-Z Output 6 ns tCLQV Clock Low To Output Valid 7 ns tWHSL Write Protect Setup Time Before CS# Low 20 ns tSHWL Write Protect Hold Time After CS# High 100 ns tDP 6 CS# High To Deep Power-Down Mode 25 (T= -40℃~105℃, VCC=2.7~3.6V, CL=30pf) 48 ns μs ZD25Q16B tRES1 tRES2 CS# High To Standby Mode Without Electronic Signature Read CS# High To Standby Mode With Electronic Signature Read tSUS CS# High To Next Command After Suspend tRS Latency Between Resume And Next Suspend μs 25 μs 20 μs 100 μs CS# High To Next Command After Reset (Except From tRST 25 WRSR) CS# High To Next Command After Reset (From WRSR) 30 μs 4.5 ms 4.5 ms tW Write Status Register Cycle Time 2.6 tPP Page Programming Time 1.1 2 ms tSE Sector Erase Time (4K Bytes) 5.1 8.2 ms tBE1 Block Erase Time (32K Bytes) 5.1 8.2 ms tBE2 Block Erase Time (64K Bytes) 5.1 8.2 ms tCE Chip Erase Time (ZD25Q16B) 5.2 8.4 ms Note: 1. Typical values given for TA=25°C. 2. Value guaranteed by design and/or characterization, not 100% tested inproduction 49 ZD25Q16B 3. Figure40. Serial Input Timing tSHSL CS# tCHSL SCLK tCLH tCLL tSLCH tDVCH tCHSH MSB SO High - Z tCHCL tCLCH tCHDX SI tSHCH LSB Figure41. Output Timing CS# tCLH tSHQZ SCLK tCLQV tCLQV tCLL tCLQX tCLQX tQLQH LSB tQHQL SO SI Least significant address bit (LIB) in Figure 42. Resume to Suspend Timing Diagram tRS Resume Command Suspend Command CS# Figure43. Hold Timing CS# SCLK SO tCHHL tHLCH tCHHH tHLQZ HOLD# SI do not care during HOLD operation. 50 tHHCH tHHQX ZD25Q16B 9. ORDERING INFORMATION I:Industrial(-40℃~105℃) 51 ZD25Q16B 10. PACKAGE INFORMATION 10.1. 8-Lead SOP(150mil) θ 8 5 E1 E L 1 L1 h 4 C D A3 A2 A A1 SEATING PLANE 0.10 b e Dimensions Symbol A A1 A2 A3 b C D E E1 Min - 0.10 1.30 0.6 0.39 0.20 4.80 5.80 3.80 Nom - - 1.40 0.65 - - 4.90 5.90 3.90 Max 1.75 0.225 1.50 0.7 0.47 0.24 5.00 6.20 4.00 Min - Nom - Unit mm Inch Max 0.004 0.051 0.024 0.015 0.008 0.189 0.228 0.150 - 0.055 0.026 - - 0.069 0.009 0.059 0.028 0.019 0.009 TITLE 8-Lead SOP(150mil) e 1.27 BSC 0.050 0.193 0.236 0.154 BSC 0.197 0.244 0.158 DRAWING NO. REV A 52 h θ 0.25 0 - - 0.80 0.50 8 0.020 0.010 0 - - 0.020 8 L L1 0.50 - 0.031 1.05 0.041 REF JEDEC MS-012 ZD25Q16B 10.2. 8-Lead SOP(208mil) θ 8 5 E1 E L1 L 1 4 C D A3 A2 A A1 SEATING PLANE 0.10 b e Dimensions Symbol A A1 A2 A3 b Min 1.75 0.05 1.70 0.55 0.38 Nom 1.9 0.1 1.80 0.60 0.43 Max 2.05 0.15 1.90 0.65 0.48 Min 0.069 0.002 0.067 0.022 0.015 Nom 0.075 0.004 0.071 0.024 0.017 Max 0.081 0.006 0.075 0.026 0.019 Unit mm Inch TITLE 8-Lead SOP(208mil) C 0.203 REF 0.008 REF DRAWING NO. D E E1 5.13 7.70 5.18 5.23 7.90 5.28 5.33 8.10 5.38 0.202 0.303 0.204 0.206 0.311 0.208 0.210 0.319 0.212 REV A 53 e 1.27 REF 0.050 REF L L1 θ 0.50 1.21 0 0.65 1.31 - 0.80 1.41 8 0.020 0.048 0 0.026 0.052 - 0.031 0.056 8 REF ZD25Q16B 10.3. 8-Lead TSSOP(173mil) 8 5 E1 E “A” 1 4 C D b A3 e A2 A 0.25 GAUGE PLANE L A1 θ L1 SEATING PLANE DETAIL “A” 0.10 Dimensions Symbol A A1 A2 A3 b C D E E1 Min - 0.05 0.90 0.39 0.20 0.13 2.90 6.20 4.30 Nom - - 1.00 0.44 - - 3.00 6.40 4.40 Max 1.20 0.15 1.05 0.49 0.28 0.17 3.10 6.60 4.50 Min - 0.002 0.035 0.015 0.008 0.005 0.114 0.244 0.169 Nom - - 0.039 0.017 - - 0.118 0.252 0.173 Max 0.047 0.006 0.041 0.019 0.011 0.007 0.122 0.260 0.177 Unit mm Inch TITLE 8-lead TSSOP DRAWING NO. REV A 54 e 0.65 BSC 0.026 BSC L 0.45 0.75 0.018 0.030 L1 1.00 REF 0.039 REF REF JEDEC MO-153 θ 0 8 0 8 ZD25Q16B 10.4. 8-Land WSON(6x5mm) D b e L h h PIN1 E E1 D1 TOP VIEW BOTTOM VIEW A A2 A1 SEATING PLANE 0.05 SIDE VIEW Dimensions Symbol A A1 b D D1 E E1 Min 0.70 0.00 - 0.35 4.90 3.90 5.90 3.30 Nom 0.75 0.02 0.203 0.40 5.00 4.00 6.00 Max 0.80 0.05 - 0.48 5.10 4.10 Min 0.028 0.000 - 0.014 0.193 Nom 0.030 - 0.008 0.016 Max 0.032 0.002 - 0.019 Unit mm Inch TITLE DFN8 (0506X0.75-1.27) A2 L h - 0.50 0.30 3.40 1.27 0.60 0.35 6.10 3.50 - 0.75 0.40 0.154 0.232 0.129 - 0.020 0.033 0.197 0.157 0.236 0.134 0.05 0.024 0.039 0.201 0.161 0.240 0.138 - 0.030 0.045 DRAWING NO. REV A 55 e REF JEDEC MO-220 ZD25Q16B 11. REVISION HISTORY Version No 1.0 Description Initial Release 56 Page Date All 2020-5-11
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