PTVS3V3D1BALYL-N

PTVS3V3D1BALYL-N ESD Protection Diode »Features ■ 500Watts peak pulse power (tp = 8/20μs) ■ Tiny DFN1006 package ■ Bidirectional configurations ■ Solid-state silicon-avalanche technology ■ Low clamping voltage ■ Low leakage current ■ IEC 61000-4-2 ±30kV contact ±30kV air ■ IEC 61000-4-4 (EFT) 40A(5/50ns) ■ IEC 61000-4-5 (Lightning) 45A (8/20μs) »Applications »Mechanical Data ■ Cell Phone Handsets and Accessories ■ DFN1006 package ■ Microprocessor based equipment ■ Molding compound flammability rating: UL 94V-0 ■ Personal Digital Assistants (PDA’s) ■ Packaging: Tape and Reel ■ Notebooks, Desktops, and Servers ■ RoHS/WEEE Compliant ■ Portable Instrumentation »Schematic & PIN Configuration DFN1006 Revision 2018 www.born-tw.com 1/4 PTVS3V3D1BALYL-N »Absolute Maximum Rating Rating Symbol Value Units Peak Pulse Power ( tp =8/20μs ) PPP 500 Watts Peak Pulse Current ( tp =8/20μs ) (note1) Ipp 45 A VESD 30 30 kV Lead Soldering Temperature TL 260(10seconds) ℃ Junction Temperature TJ -55 to + 125 ℃ Storage Temperature Tstg -55 to + 125 ℃ ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) »Electrical Characteristics Parameter Symbol Reverse Stand-Off Voltage Reverse Breakdown Voltage Conditions Min Typical VRWM Max Units 4.5 V VBR IT=1mA Reverse Leakage Current IR VRWM=4.7V,T=25℃ 0.1 μA Peak Pulse Current IPP tp =8/20μs 45 A IPP=1A,tp=8/20μs 5.5 V IPP=20A,tp=8/20μs 7.5 V IPP=45A,tp=8/20μs 11 V Clamping Voltage2) Clamping Voltage 2) VC Clamping Voltage 2) Junction Capacitance Cj VR = 0V, f = 1MHz 4.7 V 70 pF »Electrical Parameters (TA = 25°C unless otherwise noted) Symbol I PP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ I PP V RWM IR V BR IT I Parameter Working Peak Reverse Voltage V Maximum Reverse Leakage Current @ V RWM Breakdown Voltage @ IT Test Current Note:. 8/20μs pulsewaveform. Revision 2018 www.born-tw.com 2/4 PTVS3V3D1BALYL-N »Typical Characteristics Figure 2: Power Derating Curve 10 110 Percent of Rated Power for Ipp P pp – Peak Pulse Power - Ppp(KW) Figure 1: Peak Pulse Power vs. Pulse Time 500w 8/20µ s waveform 1 0.1 0.01 0.1 1 10 100 100 90 80 70 60 50 40 30 20 10 0 1,000 td – Pulse Duration - µs Waveform Paramters tr=8µs td=20µs 90 Percent Ipp 80 100 125 150 18 e-1 50 40 td=Ipp/2 20 75 16 Clamping Voltage–VC (V) 100 30 50 Figure 4: Clamping Voltage vs.Ipp 110 60 25 Ambient Temperature - TA (℃) Figure3: Pulse Waveform 70 0 10 14 12 10 Test Waveform Paramters tr=8µs td=20µs 8 6 4 2 0 0 0 5 10 15 20 25 30 0 Time (µs) Revision 2018 10 20 30 40 50 60 Peak Pulse Current–IPP (A) www.born-tw.com 3/4 PTVS3V3D1BALYL-N »Outline Drawing – DFN1006 »Marking Pin 1 E3 Pin 2 »Ordering information Order code PTVS3V3D1BALYL-N Revision 2018 Package DFN1006 Base qty 10k www.born-tw.com Delivery mode Tape and reel 4/4