IRF5305STR

IRF5305STR www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () Max. ID (A) 0.048at VGS = - 10 V - 35 0.060at VGS = - 4.5 V - 30 Qg (Typ.) 60 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS S • Power Switch • Load Switch in High Current Applications • DC/DC Converters D2PAK (TO-263) G G D D S P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C Pulsed Drain Current (t = 300 µs) Avalanche Current Single Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TA = 25 °Cc ID Unit V - 35 - 30 IDM - 100 IAS - 32 EAS 51 A mJ b PD 61 6.1 W TJ, Tstg - 55 to 150 °C Unit THERMAL RESISTANCE RATINGS Parameter Symbol Limit Junction-to-Ambient (PCB Mount)c RthJA 60 Junction-to-Case (Drain) RthJC 3 Notes: a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). E-mail：China@VBsemi TEL:86-755-83251052 °C/W IRF5305STR www.VBsemi.tw SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = - 250 µA - 60 VGS(th) VDS = VGS, ID = - 250 µA -1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS - 2.5 ± 250 VDS = - 60 V, VGS = 0 V -1 VDS = - 60 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 60 V, VGS = 0 V, TJ = 150 °C - 250 VDS - 10 V, VGS = - 10 V ID(on) RDS(on) gfs - 30 V nA µA A VGS = - 10 V, ID = - 14 A 0.048 VGS = - 4.5 V, ID = - 12 A 0.060 VDS = - 20 V, ID = - 14 A 40  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec 200 67 VDS = - 30V , VGS = - 10 V, ID = - 14 A Rise Timec Fall Timec f = 1 MHz td(on) tr c td(off) nC 13.5 14 Rg Turn-On Delay Timec pF 120 Qgd Gate Resistance Turn-Off Delay Time 1650 VGS = 0 V, VDS = - 30 V, f = 1 MHz VDD = - 30 V, RL = 2  ID  - 10 A, VGEN = - 10 V, Rg = 1  tf Drain-Source Body Diode Ratings and Characteristics TC = 25 °C 0.5 2.5 5 10 20 11 20 42 63 12 20 - 35 Pulsed Current ISM - 100 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = - 10 A, VGS = 0 V - 0.8 IF = - 10 A, dI/dt = 100 A/µs 40 trr IRM(REC) Qrr ns b IS Continuous Current  A - 1.5 V 38 57 ns 2.3 3.5 A 60 nC Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. E-mail：China@VBsemi TEL:86-755-83251052 IRF5305STR www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 0.100 VGS = 10 V thru 4 V 0.080 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) 30 20 10 VGS = 3 V VGS = 4.5 V 0.060 VGS = 10 V 0.040 0.020 0.000 0 0 1 0.5 1.5 0 2 20 40 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Output Characteristics 80 100 On-Resistance vs. Drain Current 1.0 0.040 ID = 14 A 0.034 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) 0.8 0.6 TC = 25 °C 0.4 0.2 TC = 125 °C TC = - 55 °C 1 2 0.016 3 4 0.010 5 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 50 10 TC = 25 °C ID = 14 A VGS - Gate-to-Source Voltage (V) TC = - 55 °C 40 g fs - Transconductance (S) TJ = 125 °C 0.022 TJ = 25 °C 0 0 0.028 30 TC = 125 °C 20 10 8 VDS = 30 V 6 VDS =25 V 4 VDS = 48 V 2 0 0 0 6 12 18 ID - Drain Current (A) Transconductance E-mail：China@VBsemi TEL:86-755-83251052 24 30 0 14 28 42 Qg - Total Gate Charge (nC) Gate Charge 56 70 IRF5305STR www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.3 100 ID = 250 μA VGS(th) (V) IS - Source Current (A) 2.0 TJ = 150 °C 10 1.7 TJ = 25 °C 1 1.4 1.1 - 50 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 - 25 0 25 50 75 100 VSD - Source-to-Drain Voltage (V) TJ - Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage 125 150 125 150 51 2000 VDS (V) Drain-to-Source Voltage ID = 250 μA C - Capacitance (pF) 1600 Ciss 1200 800 400 Coss 49 47 45 Crss 43 - 50 0 0 10 20 30 VDS - Drain-to-Source Voltage (V) 40 - 25 0 25 50 75 100 TJ - Temperature (°C) Drain Source Breakdown vs. Junction Temperature Capacitance 2.2 40 VGS = 10 V 1.9 30 ID - Drain Current (A) RDS(on) - On-Resistance (Normalized) ID = 14 A 1.6 VGS = 4.5 V 1.3 20 10 1.0 0.7 - 50 0 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) 50 75 100 TC - Case Temperature (°C) On-Resistance vs. Junction Temperature Current Derating E-mail：China@VBsemi TEL:86-755-83251052 0 25 125 150 IRF5305STR www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1000 100 IDAV (A) TJ = 150 °C ID - Drain Current (A) 100 TJ = 25 °C 10 100 μs 10 1 ms Limited by R DS(on)* 10 ms DC, 1 s, 100 ms 1 0.1 1 0.000001 TC = 25 °C Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 0.1 Time (s) Single Pulse Avalanche Current Capability vs. Time BVDSS Limited 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 Normalized Thermal Transient Impedance, Junction-to-Case E-mail：China@VBsemi TEL:86-755-83251052 10 30 100 IRF5305STR www.VBsemi.tw RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) E-mail：China@VBsemi TEL:86-755-83251052 VBL2658 IRF5305STR www.VBsemi.com Disclaimer www.VBsemi.tw All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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