SI2305

SI2305 SOT-23 場效應晶體管(SOT-23 Field Effect Transistors) P-Channel Enhancement-Mode MOS FETs P 沟道增强型 MOS 场效应管 ■MAXIMUM RATINGS 最大額定值 Characteristic 特性參數 Symbol 符號 Rat 額定值 Unit 單位 Drain-Source Voltage 漏極-源極電壓 BVDSS -20 V Gate- Source Voltage 栅極-源極電壓 VGS +10 V Drain Current (continuous) 漏極電流-連續 ID -3.9 A Drain Current (pulsed) 漏極電流-脉冲 IDM -15 A Total Device Dissipation 總耗散功率 TA=25℃環境溫度爲 25℃ PD 1200 mW Junction 結溫 TJ 150 ℃ Storage Temperature 儲存溫度 Tstg -55to+150 ℃ www.yongyutai.com PAGE 1 SI2305 ■ELECTRICAL CHARACTERISTICS 電特性 (TA=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃) Characteristic 特性參數 Symbol 符號 Min 最小值 Typ 典型值 Max 最大值 Unit 單位 Drain-Source Breakdown Voltage 漏極-源極擊穿電壓(ID = -250uA,VGS=0V) BVDSS -20 — — V Gate Threshold Voltage 栅極開启電壓(ID = -250uA,VGS= VDS) VGS(th) -0.5 — -1.5 V Diode Forward Voltage Drop 内附二極管正向壓降(IS= -0.75A,VGS=0V) VSD — — -1.5 V Zero Gate Voltage Drain Current 零栅壓漏極電流(VGS=0V, VDS= -16V) (VGS=0V, VDS= -16V, TA=55℃) IDSS — — -1 -10 uA Gate Body Leakage 栅極漏電流(VGS=+8V, VDS=0V) IGSS — — +100 nA Static Drain-Source On-State Resistance 静态漏源導通電阻(ID= -3.9A,VGS= -4.5V) RDS(ON) — 55 65 mΩ Static Drain-Source On-State Resistance 静态漏源導通電阻(ID= -2A,VGS= -2.5V) RDS(ON) — 70 80 mΩ Input Capacitance 輸入電容 (VGS=0V, VDS= -10V,f=1MHz) CISS — 750 — pF Output Capacitance 輸出電容 (VGS=0V, VDS= -10V,f=1MHz) COSS — 120 — pF Turn-ON Time 开启時間 (VDS= -10V, ID= -2.8A, RGEN=6Ω) t(on) — 8 — ns Turn-OFF Time 关断時間 (VDS= -10V, ID= -2.8A, RGEN=6Ω) t(off) — 60 — ns Pulse Width