ULN2003
High-voltage High-current Darlington Transistor Arrays
Features
⚫
⚫
500-mA-Rated Collector Current(single
Inputs Compatible With Various Types of
Logic
output)
⚫
Relay-Driver Applications
⚫
High-Voltage Outputs : 50V
⚫
SOP16 package
⚫
Output Clamp Diodes
General Description
The ULN2003 is high-voltage
high-current
These devices are capable of driving a wide
Darlington transistor arrays each containing
range of loads including solenoids, relays, DC
seven open collector common emitter pairs.
motors, LED displays, filament lamps, thermal
Each pair is rated at 500mA. Suppression
print-heads and high-power buffers.
diodes are included for inductive load driving,
the inputs and outputs are pinned in opposition
to simplify board layout.
Pin Assignments
Connection Diagram
Ordering Information
Order No.
Package
Packing
ULN2003
SOP16
Tape and Reel, 3500
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ULN2003
Pin Descriptions
Pin Number
Pin Name
Function
1
1B
Input pair1
2
2B
Input pair1
3
3B
Input pair1
4
4B
Input pair1
5
5B
Input pair1
6
6B
Input pair1
7
7B
Input pair1
8
E
Common Emitter (ground)
9
COM
Common Clamp Diodes
10
7C
Output pair7
11
6C
Output pair6
12
5C
Output pair5
13
4C
Output pair4
14
3C
Output pair3
15
2C
Output pair2
16
1C
Output pair1
Functional Block Diagram
Note: All resistor values shown are nominal.
The collentor-emitter diode is a parasitic structure and should not be used to conduct current.If the collector(s) go
below ground an external Schoottky diode should be added to clamp negative undershoots.
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ULN2003
Absolute Maximum Ratings (1)
At 25°C free-air temperature (unless otherwise noted)
Symbol
Parameter
VCC
Collector to emitter voltage
50
V
VR
VI
Clamp diode reverse voltage(2)
Input voltage(2)
Peak collector current
50
30
500
V
V
mA
mA
ICP
Min
See typical characteristics
Max
Unit
IOK
ITE
Output clamp current
500
Total emitter-terminal current
–2.5
A
TA
Operating free-air temperature range
70
°C
–20
θJA
Thermal Resistance Junction-to-Ambient(3)
63
θJC
Thermal Resistance Junction-to-Case(4)
12
°C/W
TJ
Operating virtual junction temperature
150
°C
TSTG
Storage temperature range
–65
150
°C
ESD
Human Body Mode
--
3000
V
(1)
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under "recommended operating conditions" is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
All voltage values are with respect to the emitter/substrate terminal E, unless otherwise noted.
(3)
Maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation
at any allowable ambient temperature is PD = (TJ(max) – TA)/θJA. Operating at the absolute maximum TJ of
150°C can affect reliability.
(4)
Maximum power dissipation is a function of TJ(max), θJC, and TA. The maximum allowable power dissipation
at any allowable ambient temperature is PD = (TJ(max) – TA)/θJC. Operating at the absolute maximum TJ of
150°C can affect reliability.
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ULN2003
Electrical Characteristics(TA=+25℃, unless otherwise specified)
Parameter
V
I(on)
V
CE(sat)
I
CEX
V
On-state input voltage
Collector-emitter
saturation voltage
Test
Figure
ULN2003
Test Conditions
MIN
TYP
MAX
IC = 200 mA
--
--
2.4
IC = 250 mA
--
--
2.7
IC = 300 mA
--
--
3
II = 250 μA,
IC = 100 mA
--
0.9
1.1
II = 350 μA,
IC = 200 mA
--
1
1.3
II = 500 μA,
IC = 350 mA
--
1.2
1.6
Figure 1
VCE = 50 V,
II = 0
--
--
50
Figure 2
VCE = 50 V,
TA = +105°C
II = 0
--
--
100
Figure 6
Figure 5
Collector cutoff current
VCE = 2 V
Unit
V
V
μA
F
Clamp forward voltage
Figure 8
IF = 350 mA
--
1.7
2
V
I(off)
Off-state input current
Figure 3
VCE = 50 V, IC = 500 μA
50
65
--
μA
II
Input current
Figure 4
VI = 3.85 V
0.93
1.35
mA
IR
Clamp reverse current
Figure 7
---
100
Ci
Input capacitance
-----
15
25
I
VR = 50 V
VI = 0,
TA = 70°C
f = 1 MHz
50
μA
pF
Switching Characteristics (TA = +25°C, unless otherwise specified)
Parameter
ULN2003
Test Conditions
MIN
t
PLH
t
PHL
V
OH
Propagation delay time,
low- to high-level output
Propagation delay time,
high- to low-level output
High-level output voltage
after switching
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UNIT
TYP
MAX
See Figure 9
0.25
1
μs
See Figure 9
0.25
1
μs
VS = 50 V, IO = 300 mA,
VS–20
See Figure 9
4
mV
V1.1
ULN2003
Parameter Measurement Information
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ULN2003
Notes: 8. The pulse generator has the following characteristics:
Pulse Width=12.5Hz, output impedance 50Ω, tr≤5ns, tr≤10ns.
9. CL includes prove and jig capacitance.
10. VIH=3V
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ULN2003
SOP16 Outline Dimensions
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