MMBT3904

MMBT3904 NPN Plastic-Encapsulate Transistor » Features V = 40V IC = 0.2A CE »Pin Configurations 3 COLLECTOR f T =300MHZ @VCE=20V, IC=10mA,f=100MHz 1 BASE 2 EMITTER »General Description  As complementary type the PNP transistor MMBT3906 is recommended  Epitaxial planar die constructio  SOT-23 Plastic Package. »Absolute Maximum Ratings @T =25℃ unless otherwise noted A Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 200 mA PC Total Device Dissipation 200 mW RθJA Thermal Resistance Junction to Ambient 625 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ Revision 2018 www.born-tw.com 1/4 MMBT3904 »Electrical Characteristics @T =25℃ unless otherwise noted A Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage VCBO IC= 10μA, IE=0 60 V Collector-emitter breakdown voltage VCEO IC= 1mA, IB=0 40 V Emitter-base breakdown voltage VEBO IE=10μA, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 μA Collector cut-off current ICEX VCE=30V,VBE(off)=3V 50 nA IEBO VEB=5V, IC=0 0.1 μA hFE(1) VCE=1V, IC=10mA 100 hFE(2) VCE=1V, IC= 50mA 60 hFE(3) VCE=1V, IC= 100mA 30 Collector-emitter saturation voltage VCE(sat) IC=50mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC= 50mA, IB= 5mA 0.95 V Emitter cut-off current DC current gain 400 Transition frequency fT VCE=20V, IC=10mA,f=100MHz Delay Time td VCC=3V,VBE=-0.5V 35 nS Rise Time tr IC=10mA, IB1=-IB2=1.0mA 35 nS Storage Time ts VCC=3V,IC=10mA, 200 nS Fall Time tf IB1=-IB2=1mA 50 nS CLASSIFICATION OF Range Revision 2018 300 MHz hFE(1) 100-300 www.born-tw.com 2/4 MMBT3904 »Typical Performance Characteristics（(TJ = 25 °C, unless otherwise noted)） Revision 2018 www.born-tw.com 3/4 MMBT3904 »Package Information SOT-23 »Ordering information Order code MMBT3904 Revision 2018 Package SOT-23 Marking 1AM www.born-tw.com Base qty Delivery mode 3K Tape and reel 4/4