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ESD9B5.0ST5G-MS
Semiconductor
Features
Compiance
Pin Description
Capacitance: 15pF(typ.)
Reverse Working Voltage: 5V
IEC 61000-4-2 (ESD Air): ±25KV
IEC 61000-4-2 (ESD Contact): ±25KV
IEC 61000-4-5 (Lightning 8/20µs): 8A
Applications
Schematic Diagram
Smart Phone and Tablet PC
TV and Set Top Box
Wearable Devices
PDA
Limiting Values(TA = 25 °C, unless otherwise specified)
Symbol
Parameter
Conditions
Min
Max
Unit
IEC 61000-4-2; Contact Discharge
-
±25
kV
IEC 61000-4-2; Air Discharge
-
±25
kV
VESD
Electrostatic Discharge Voltage
PPP
Peak Pulse Power
tP = 8/20 µs
-
80
W
IPPM
Rated Peak Pulse Current
tP = 8/20 µs
-
8
A
TA
Ambient Temperature Range
-
-55
125
℃
Tstg
Storage Temperature Range
-
-55
150
℃
Electrical Characteristics(TA = 25 °C, unless otherwise specified)
Symbol
Parameter
Conditions
Min
Typ.
Max
Unit
Reverse Working Voltage
TA = 25 °C
-
-
5.0
V
Breakdown Voltage
IR = 1mA; TA = 25 °C
5.6
6.5
8.4
V
IR
Reverse Leakage Current
VRWM = 5V; TA = 25 °C
-
-
0.1
µA
VC
Clamping Voltage
IPP=1A, tP =8/20µs
-
-
6
V
IPP=8A, tP =8/20µs
-
-
10
V
CJ
Junction Capacitance
VR = 0V, f = 1 MHz
-
15
18
pF
VRWM
VBR
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ESD9B5.0ST5G-MS
Semiconductor
Compiance
PACKAGE MECHANICAL DATA
A
Dim
B
C
R
D
E
MIN
Millimeters
MAX
MIN
MAX
A
0.0125
0.02
0.32
0.52
B
0.000
0.002
0.00
0.05
C
0.037
0.043
0.95
1.080
D
0.022
0.027
0.55
0.680
E
0.016
0.024
0.40
0.60
F
0.008
0.012
0.20
0.30
H
R
F
Inches
0.015Typ.
0.001
0.40Typ.
0.005
0.05
0.15
H
1.20
0.50
0.60
0.70
NOTES:
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
2. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.
CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR
COMPANY'S MANUFACTURING GUIDELINES ARE MET.
REEL SPECIFICATION
P/N
ESD9B5.0ST5G-MS
PKG
DFN1006-2L
QTY
10000
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ESD9B5.0ST5G-MS
Semiconductor
Compiance
Attention
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you
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orcontained herein.
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