UMW
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UMW SI2302B
SOT-23 Plastic-Encapsulate MOSFETS
UMW SI2302B N-Channel 20-V(D-S) MOSFET
20 V
SOT–23
ID
RDS(on)MAX
V(BR)DSS
80 mΩ@4.5V
2.5A
100mΩ@ 2.5V
1. GATE
2. SOURCE
3. DRAIN
FEATURE
z TrenchFET Power MOSFET
APPLICATION
Load Switch for Portable Devices
z
DC/DC Converter
z
MARKING
Equivalent Circuit
A2SHB
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±8
Continuous Drain Current
ID
2.5
Continuous Source-Drain Current(Diode Conduction)
IS
0.6
Power Dissipation
PD
Thermal Resistance from Junction to Ambient (t≤5s)
RθJA
Unit
V
A
W
0.4
℃/W
312.5
Operating Junction
TJ
150
Storage Temperature
TSTG
-55 ~+150
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1
℃
友台半导体有限公司
UMW
R
UMW SI2302B
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
0.95
1.2
Units
Static
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =10µA
20
VGS(th)
VDS =VGS, ID =50µA
0.65
Gate-body leakage
IGSS
VDS =0V, VGS =±8V
±100
nA
Zero gate voltage drain current
IDSS
VDS =20V, VGS =0V
1
µA
Gate-threshold voltage
a
Drain-source on-resistance
Forward transconductance
rDS(on)
a
Diode forward voltage
VGS =4.5V, ID =2.6A
0.045
0.070
VGS =2.5V, ID =2.1A
0.060
0.100
gfs
VDS =5V, ID =3.6A
8
VSD
IS=0.94A,VGS=0V
0.76
1.2
4.0
10
V
Ω
S
V
Dynamic
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
1.5
Ciss
300
Input capacitance
b
Output capacitance
b
Reverse transfer capacitance
Switching
Coss
b
VDS =10V,VGS =4.5V,ID =3.6A
VDS =10V,VGS =0V,f=1MHz
nC
0.65
pF
120
80
Crss
b
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
VDD=10V,
RL=5.5Ω, ID ≈3.6A,
VGEN=4.5V,Rg=6Ω
7
15
55
80
16
60
10
25
ns
Notes :
a.
Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
b.
These parameters have no way to verify.
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2
友台半导体有限公司
UMW
R
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
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UMW SI2302B
Dimensions In Millimeters
Min.
Max.
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP.
1.800
2.000
0.550 REF.
0.300
0.500
0°
8°
3
Dimensions In Inches
Min.
Max.
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP.
0.071
0.079
0.022 REF.
0.012
0.020
0°
8°
友台半导体有限公司
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