SM3439NHQAC-TRG

SM3439NHQA ® N-Channel Enhancement Mode MOSFET Pin Description Features · D D D D 40V/43A, RDS(ON) = 9.5mW(max.) @ VGS =10V SG S S RDS(ON) = 13.5mW(max.) @ VGS =4.5V · · · ESD protection DFN3.3x3.3A-8_EP Lower Qg and Qgd for high-speed switching Lead Free and Green Devices Available (5,6,7,8) DD DD (RoHS Compliant) Applications · (4) G Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. S S S ( 1, 2, 3 ) N-Channel MOSFET Ordering and Marking Information Package Code QA : DFN3.3x3.3A-8_EP Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device SM3439NH Assembly Material Handling Code Temperature Range Package Code SM3439NH QA : SM 3439N XXXXX XXXXX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - December, 2015 1 www.sinopowersemi.com SM3439NHQA ® Absolute Maximum Ratings Symbol (TA = 25°C Unless Otherwise Noted) Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage 40 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 TJ TSTG Storage Temperature Range IS Diode Continuous Forward Current ID Continuous Drain Current IDM Pulsed Drain Current PD Maximum Power Dissipation R qJC -55 to 150 Thermal Resistance-Junction to Case ID Continuous Drain Current PD Maximum Power Dissipation TC=25°C 10 TC=25°C 43 TC=100°C 28 °C A a TC=25°C 60 TC=25°C 27.8 TC=100°C 11.1 Steady State 4.5 TA=25°C 12 TA=70°C 9.6 TA=25°C 2.08 TA=70°C 1.3 t £ 10s V 40 W °C/W A W RqJA Thermal Resistance-Junction to Ambient I AS c Avalanche Current, Single pulse L=0.1mH 19 A Avalanche Energy, Single pulse L=0.1mH 18 mJ EAS c Steady State b 60 °C/W Note a：Pulse width is limited by maximum junction temperature. 2 Note b：RqJA steady state t=100s. RθJA is measured with the device mounted on 1in , FR-4 board with 2oz. Copper. Note c：UIS tested and pulse width is limited by maximum junction temperature 150oC (initial temperature TJ = 25o C). Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - December, 2015 2 www.sinopowersemi.com SM3439NHQA ® Electrical Characteristics Symbol (TA = 25°C Unless Otherwise Noted) Parameter Test Conditions Min. Typ. Max. Unit 40 - - V - - 1 - - 30 Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) Gfs d V GS=0V, ID S=250mA V DS=32V, V GS=0V TJ=85°C mA Gate Threshold Voltage V DS=V GS, IDS=250mA 1.4 1.8 2.5 V Gate Leakage Current V GS=±20V, V DS=0V - - ±10 mA V GS=10V, IDS=15A - 7.9 9.5 - 11.8 - V GS=4.5V, I DS=8A - 11.5 13.5 V DS=5V, IDS =8A - 18 - S I SD =10A, V GS=0V - 0.82 1.1 V - 18.8 - - 7.4 - - 11.4 - - 4.5 - nC W Drain-Source On-state Resistance Forward Transconductance TJ=125°C mW Diode Characteristics V SD d Diode Forward Voltage trr Reverse Recovery Time ta Charge Time tb Discharge Time Q rr I F=5A, dlSD /dt=100A/ms Reverse Recovery Charge Dynamic Characteristics e RG Gate Resistance V GS=0V,VDS =0V, F=1MHz - 1.7 - Ci ss Input Capacitance - 700 - C oss Output Capacitance - 191 - Crs s Reverse Transfer Capacitance V GS=0V, V DS=20V, Frequency=1.0MHz - 30 - td(ON ) Turn-on Delay Time - 10 - - 6.6 - - 18 - - 12 - - 10.7 - - 5.1 - - 1.55 - - 2.9 - - 1.1 - tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf ns V DD =20V, RL =20W, I DS=1A, VGEN=10V, R G=6W Turn-off Fall Time Gate Charge Characteristics pF ns e Qg Total Gate Charge Qg Total Gate Charge Qgth Threshold Gate Charge Qgs Gate-Source Charge Q gd Gate-Drain Charge V DS=20V, V GS=10V, I DS=15A V DS=20V, V GS=4.5V, I DS=15A nC Note d：Pulse test; pulse width £ 300 ms, duty cycle £ 2%. Note e：Guaranteed by design, not subject to production testing. Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - December, 2015 3 www.sinopowersemi.com SM3439NHQA ® Typical Operating Characteristics Drain Current 30 48 25 40 20 32 ID - Drain Current (A) Ptot - Power (W) Power Dissipation 15 10 5 24 16 8 o 0 o TC=25 C 0 20 40 60 0 80 100 120 140 160 TC=25 C,VG=10V 0 20 Tj - Junction Temperature (°C) 60 80 100 120 140 160 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 3 Normalized Transient Thermal Resistance 200 100 100ms Rd s(o n) Lim it ID - Drain Current (A) 40 10 1ms 1 10ms DC o TC=25 C 0.1 0.01 0.1 1 10 100 300 VDS - Drain - Source Voltage (V) Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - December, 2015 Duty = 0.5 1 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 Single Pulse 1E-4 1E-6 1E-5 1E-4 2 Mounted on 1in pad o RqJC :4.5 C/W 1E-3 0.01 0.1 Square Wave Pulse Duration (sec) 4 www.sinopowersemi.com SM3439NHQA ® Typical Operating Characteristics (Cont.) Thermal Transient Impedance Safe Operation Area Normalized Transient Thermal Resistance Rd s(o n) Lim it ID - Drain Current (A) 100 10 300ms 1ms 1 10ms O DC 1s TA=25 C 0.1 0.01 0.1 1 100ms 10 3 Duty = 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 1E-3 0.01 100 300 Mounted on 1in pad o RqJA : 60 C/W 0.1 1 10 100 500 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Output Characteristics Drain-Source On Resistance 60 21 VGS= 4.5,5,6,7,8,9,10V 18 RDS(ON) - On - Resistance (mW) ID - Drain Current (A) 50 4V 40 30 20 3.5V 10 15 VGS=4.5V 12 9 VGS=10V 6 3 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain - Source Voltage (V) Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - December, 2015 0 3.0 5 0 10 20 30 40 ID - Drain Current (A) 50 60 www.sinopowersemi.com SM3439NHQA ® Typical Operating Characteristics (Cont.) Gate-Source On Resistance 1.6 IDS=15A IDS =250mA 1.4 24 Normalized Threshold Voltage RDS(ON) - On - Resistance (mW) 28 Gate Threshold Voltage 20 16 12 8 4 2 3 4 5 6 7 8 9 0.8 0.6 0.4 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Drain-Source On Resistance Source-Drain Diode Forward 60 VGS = 10V IDS = 15A 1.6 IS - Source Current (A) Normalized On Resistance 1.0 0.2 -50 -25 10 2.0 1.8 1.2 1.4 1.2 1.0 0.8 0.6 10 o Tj=150 C o Tj=25 C 1 0.4 o 0.2 -50 -25 RON@Tj=25 C: 7.9mW 0 25 50 0.1 0.0 75 100 125 150 Tj - Junction Temperature (°C) Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - December, 2015 0.3 0.6 0.9 1.2 1.5 VSD - Source - Drain Voltage (V) 6 www.sinopowersemi.com SM3439NHQA ® Typical Operating Characteristics (Cont.) Capacitance 900 Gate Charge 10 Frequency=1MHz C - Capacitance (pF) VGS - Gate-source Voltage (V) Ciss 700 600 500 400 300 Coss 200 Crss 100 0 VDS= 20V 9 800 IDS= 15A 8 7 6 5 4 3 2 1 0 8 16 24 32 0 40 VDS - Drain-Source Voltage (V) 0 2 4 6 8 10 12 QG - Gate Charge (nC) Transfer Characteristics 50 ID - Drain Current (A) 40 30 20 o Tj=125 C o Tj=25 C 10 0 0 1 2 3 4 5 6 VGS - Gate-Source Voltage (V) Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - December, 2015 7 www.sinopowersemi.com SM3439NHQA ® Avalanche Test Circuit and Waveforms VDS L tp VDSX(SUS) DUT VDS IAS RG VDD VDD IL tp EAS 0.01W tAV Switching Time Test Circuit and Waveforms VDS RD VDS DUT RG 90% VGS VDD 10% VGS tp td(on) tr Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - December, 2015 8 td(off) tf www.sinopowersemi.com SM3439NHQA ® Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - December, 2015 9 www.sinopowersemi.com SM3439NHQA ® Classification Profile Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - December, 2015 10 www.sinopowersemi.com SM3439NHQA ® Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 60-150 seconds 217 °C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5°C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time 25°C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 3 Package Volume mm Thickness