S8050

S8050 General Purpose Transistors NPN Silicon FEATURES Complimentary to S8550 SOT-23 MARKING: J3Y MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipation 300 mW Thermal Resistance From Junction To Ambient 417 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit 40 V IC=1mA, IB 0 V(BR)CEO = 25 V V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO V= CB=40 V , IE 0 0.1 μA Collector cut-off current ICEO = VCB= 20V , I E 0 0.1 μA Emitter cut-off current IEBO = VEB= 5V , IC 0 0.1 μA hFE(1) VCE= 1V, I C= 50mA 120 hFE(2) VCE= 1V, I C= 500mA 50 Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain IC= 100μA, IE=0 400 Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50mA 1.2 V fT Transition frequency VCE= 6V, I C= 20mA f=30MHz 150 MHz CLASSIFICATION OF hFE(1) Rank Range www.fuxinsemi.com L H J 120-200 200-350 300-400 Page 1 Ver2.1 S8050 General Purpose Transistors NPN Silicon Static Characteristic 100 Ta=100℃ DC CURRENT GAIN COLLECTOR CURRENT IC COMMON EMITTER VCE=1V 300uA 60 —— hFE 350uA IC (mA) 400uA 80 hFE 1000 COMMON EMITTER Ta=25℃ 250uA 200uA 40 150uA Ta=25℃ 100 100uA 20 IB=50uA 10 0 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE VCEsat 500 —— VCE 20 1 3 10 IC VBEsat 1.2 500 100 30 COLLECTOR CURRENT (V) IC (mA) IC —— BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 300 100 Ta=100℃ Ta=25℃ 30 Ta=25℃ 0.8 Ta=100℃ 0.4 β=10 β=10 10 1 10 3 COLLECTOR CURRENT IC 500 IC 0.0 500 100 30 1 3 30 10 (mA) 100 COLLECTOR CURRENT —— VBE Cob/ Cib 100 —— IC VCB/ VEB f=1MHz IE=0/ IC=0 100 Ta=25℃ Cib (pF) 30 30 C Ta=25℃ 10 CAPACITANCE IC (mA) COMMON EMITTER VCE=1V COLLECTOR CURRENT 500 (mA) Ta=100℃ 3 1 Cob 10 3 0.3 0.1 0.2 0.4 0.6 0.8 1 0.1 1.0 fT 1000 —— IC PC —— 400 10 3 REVERSE VOLTAGE V 20 (V) Ta VCE=6V COLLECTOR POWER DISSIPATION PC (mW) (MHz) Ta=25℃ fT TRANSITION FREQUENCY 1 0.3 BASE-EMMITER VOLTAGE VBE (V) 100 10 10 200 100 0 100 30 COLLECTOR CURRENT www.fuxinsemi.com 300 IC 0 (mA) 25 50 75 AMBIENT TEMPERATURE Page 2 100 Ta 125 150 (℃ ) Ver2.1 S8050 General Purpose Transistors NPN Silicon SOT-23 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 2.000 0.071 e e1 0.950 TYP. 1.800 L L1 www.fuxinsemi.com 0.037 TYP. 0.550 REF. 0.300 0.079 0.022 REF. 0.500 Page 3 0.012 0.020 Ver2.1 S8050 General Purpose Transistors NPN Silicon Pinning information Pin Simplified outline Symbol C PinB PinC PinE C Base Collector Emitter B E B E Marking Type number Marking code S8050 J3Y Suggested solder pad layout SOT-23 0.037(0.95) 0.037(0.95) 0.079(2.0) 0.035(0.90) 0.031(0.80) Dimensions in inches and (millimeters) Reel packing PACKAGE SOT-23 REEL SIZE 7" www.fuxinsemi.com REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) 3,000 4.0 30,000 183*123*183 178 Page 4 CARTON SIZE (m/m) 382*257*387 CARTON (pcs) 240,000 APPROX. GROSS WEIGHT (kg) 11.6 Ver2.1 S8050 General Purpose Transistors NPN Silicon Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 o t25 C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o