IRF7815TR

IRF7815TR www.VBsemi.tw N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 a RDS(on) (Ω) ID (A) 0.080 at VGS = 10 V 5.4 0.085 at VGS = 8 V 4.5 • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 % Rg Tested • 100 % Avalanche Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 23 nC D APPLICATIONS SO-8 • Primary Side Switch S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Continuous Source-Drain Diode Current Limit 150 ± 20 5.4 5.1 5.0b, c 4.5b, c Operating Junction and Storage Temperature Range Unit V A 22 4.5 2.6b, c 20 20 5.9 3.8 3.1b, c 2b, c - 55 to 150 TJ, Tstg mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f t ≤ 10 s Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface mounted on 1” x 1” FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 80 °C/W. E-mail：China@VBsemi TEL:86-755-83251052 Symbol RthJA RthJF Typical 33 17 Maximum 40 21 Unit °C/W IRF7815TR www.VBsemi.tw SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 15 0 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS /TJ VGS(th) Temperature Coefficient ΔVGS(th) /TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS , ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Transconductancea gfs Forward V 172 mV/°C - 10 1.2 2.5 V ± 100 nA VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 10 V, VGS = 10 V 30 µA A VGS = 10 V, ID = 5 A 0.080 0.090 VGS = 8 V, ID = 5 A 0.085 0.095 VDS = 15 V, ID = 5 A 23 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1735 VDS = 50 V, VGS = 0 V, f = 1 MHz tr pF 37 VDS = 75 V, VGS = 10 V, ID = 5 A 28.5 43 23 35 VDS = 75 V, VGS = 8 V, ID = 5 A 8 f = 1 MHz 0.85 1.3 14 21 VDD = 50 V, RL = 10 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 12 18 22 33 tf 6 10 td(on) 16 24 tr td(off) nC 6.5 td(on) td(off) 160 VDD = 50 V, RL = 10 Ω ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω tf 12 18 20 30 7 12 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 7.7 50 IS = 2.6 A IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.77 1.2 V 63 95 ns 110 165 nC 49 14 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % a. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. E-mail：China@VBsemi TEL:86-755-83251052 IRF7815TR www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.2 60 VGS = 10 V thru 7 V VGS = 6 V 0.9 I D - Drain Current (A) I D - Drain Current (A) 48 36 24 TC = 125 °C 0.6 TC = 25 °C 0.3 12 VGS = 5 V TC = - 55 °C 0 0.0 0 1 2 3 4 5 0 2 VDS - Drain-to-Source Voltage (V) 0.115 1600 C - Capacitance (pF) 2000 0.105 VGS = 8 V 0.095 VGS = 10 V Ciss 800 400 0.075 0 20 30 40 50 Coss Crss 0 60 20 ID - Drain Current (A) 40 60 80 100 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 2.5 10 ID = 5 A ID = 5 A VDS = 50 V VGS = 10 V 2.1 VDS = 75 V 6 VDS = 100 V 4 (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 10 1200 0.085 10 8 Transfer Characteristics 0.125 0 6 VGS - Gate-to-Source Voltage (V) Output Characteristics R DS(on) - On-Resistance (Ω) 4 1.7 VGS = 8 V 1.3 0.9 2 0 0 6 12 18 Qg - Total Gate Charge (nC) Gate Charge E-mail：China@VBsemi TEL:86-755-83251052 24 30 0.5 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 150 IRF7815TR www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.12 I S - Source Current (A) 10 R DS(on) - Drain-to-Source On-Resistance (Ω) 100 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.001 ID = 5 A 0.11 0.10 TJ = 125 °C 0.09 TJ = 25 °C 0.08 0.00 0 0.2 0.4 0.6 0.8 1 0 1.2 2 VSD - Source-to-Drain Voltage (V) 10 160 Power (W) 0.5 VGS(th) (V) 8 200 1.0 ID = 5 mA - 0.5 - 1.0 - 1.5 - 50 6 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.0 4 VGS - Gate-to-Source Voltage (V) 120 80 40 - 25 0 25 50 100 75 125 150 0 0.001 Threshold Voltage Limited by RDS(on)* 10 I D - Drain Current (A) 0.1 1 Single Pulse Power, Junction-to-Ambient 100 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse 0.01 0.01 1s 10 s DC 1 10 100 1000 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified 0.1 * VGS Safe Operating Area, Junction-to-Ambient E-mail：China@VBsemi TEL:86-755-83251052 0.01 Time (s) TJ - Temperature ( C) 10 IRF7815TR www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 9 ID - Drain Current (A) 7 5 4 2 0 0 25 50 75 100 125 150 0 25 TC - Case Temperature (°C) 8.0 2.0 6.4 1.6 4.8 1.2 Power (W) Power (W) Current Derating* 3.2 1.6 0.8 0.4 0.0 0.0 0 25 50 75 100 125 150 50 75 100 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 125 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. E-mail：China@VBsemi TEL:86-755-83251052 IRF7815TR www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 10 1 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot E-mail：China@VBsemi TEL:86-755-83251052 1 10 IRF7815TR www.VBsemi.tw SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 E-mail：China@VBsemi TEL:86-755-83251052 0.101 mm IRF7815TR www.VBsemi.tw RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) E-mail：China@VBsemi TEL:86-755-83251052 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) IRF7815TR www.VBsemi.tw Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives ( collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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