BC847A

BC846/BC847/BC848 SOT-23 NPN Plastic-Encapsulate Transistors FEATURES Ideally suited for automatic insertion z For switching and AF amplifier applications z SOT-23 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta =25℃ unless otherwise noted) Symbol VCBO Parameter Value Collector-Base Voltage V BC846 BC847 BC848 VCEO 80 50 30 Collector-Emitter Voltage V BC846 BC847 BC848 VEBO Unit Emitter-Base Voltage 65 45 30 6 V IC Collector Current –Continuous 0.1 A PC Collector Power Dissipation 200 mW RΘJA Thermal Resistance From Junction To Ambient 625 ℃/W 150 ℃ TJ Junction Temperature Tstg Storage Temperature ℃ -55~+150 DEVICE MARKING BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F; BC847C=1G; BC848A=1J; BC848B=1K: BC848C=1L Page 1 Document ID Issued Date Revised Date Revision A S-221704 2008/02/10 2011/08/04 B Page. 4 BC846/BC847/BC848 SOT-23 NPN Plastic-Encapsulate Transistors ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter Collector-base breakdown voltage T est conditions BC846 BC847 Collector-emitter breakdown voltage VCBO IC= 10µA, IE=0 30 BC846 65 VCEO IC= 10mA, IB=0 Collector cut-off current VEBO IE= 10µA, IC=0 ICBO VCB=50 V , IE=0 BC848 VCB=30 V , IE=0 VCE=60 V , IB=0 ICEO BC848 Emitter cut-off current DC current gain 6 VEB=5 V , IC=0 BC846A,847A,848A hFE Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Collector output capacitance V VCE=45 V , IB=0 VCE= 5V, IC= 2mA BC847C,BC848C Transition frequency V 0.1 μA 0.1 μA 0.1 μA VCE=30 V , IB=0 IEBO BC846B,847B,848B V VCB=70 V , IE=0 BC846 BC847 Unit 30 BC846 BC847 Max 45 BC848 Emitter-base breakdown voltage Typ 50 BC848 BC847 Collector cut-off current Min 80 fT Cob Page 2 110 220 200 450 420 800 IC=100mA, IB= 5mA 0.5 V IC=100mA, IB= 5mA 1.1 V VCE= 5 V, IC= 10mA f=100MHz 100 MHz VCB=10V,f=1MHz pF 4.5 Document ID Issued Date Revised Date Revision A S-221704 2008/02/10 2011/08/04 B Page. 4 BC846/BC847/BC848 SOT-23 NPN Plastic-Encapsulate Transistors Typical Characteristics Static Characteristic (mA) 10 8 —— IC COMMON EMITTER VCE= 5V 1000 DC CURRENT GAIN IC 18uA 16uA 6 14uA 12uA 4 Ta=100℃ hFE 20uA COLLECTOR CURRENT hFE 3000 COMMON EMITTER Ta=25℃ 10uA 8uA Ta=25℃ 100 6uA 2 4uA IB=2uA 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1000 6 10 7 1 VCEsat IC —— IC 100 (mA) IC 500 β=20 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=20 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 10 COLLECTOR CURRENT VCE (V) 800 Ta=25℃ 600 Ta=100 ℃ 400 200 0.1 1 10 COLLECTOR CURREMT IC 100 —— IC Ta=100 ℃ 100 Ta=25℃ 10 0.1 100 1 10 COLLECTOR CURREMT (mA) VBE fT 500 100 (mA) IC T =2 5℃ a TRANSITION FREQUENCY 10 T =1 00℃ a COLLECTOR CURRENT IC fT (mA) (MHz) COMMON EMITTER VCE=5V —— IC 1 100 COMMON EMITTER VCE=5V Ta=25℃ 0.1 0.2 0.4 0.6 0.8 10 0.25 1.0 2 100 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Cib CAPACITANCE C (pF) Ta=25 ℃ Cob 1 0.1 0.1 6 PC 250 f=1MHz IE=0/IC=0 10 4 8 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (V) —— IC 10 12 125 150 (mA) Ta 200 150 100 50 0 1 REVERSE VOLTAGE 10 V 0 30 25 50 75 AMBIENT TEMPERATURE (V) Page 3 100 Ta (℃ ) Document ID Issued Date Revised Date Revision A S-221704 2008/02/10 2011/08/04 B Page. 4 BC846/BC847/BC848 SOT-23 NPN Plastic-Encapsulate Transistors SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 6° SOT-23 Suggested Pad Layout Page 4 Document ID Issued Date Revised Date Revision A S-221704 2008/02/10 2011/08/04 B Page. 4