LPM2301B3F

Preliminary Datasheet LPM2301 LPM2301 -20V/-2A P-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM2301 is the P-channel logic enhancement  -20V/-2.0A,RDS(ON)=170mΩ(typ.)@VGS=-2.5V mode power field effect transistors are produced  -20V/-2.0A,RDS(ON)=130mΩ(typ.)@VGS=-4.5V  Super high density cell design for extremely low using high cell density, DMOS trench technology. RDS(ON) This high density process is especially tailored to  minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. Ordering Information LPM2301- □ □ SOT23 Package Applications      Portable Media Players Cellular and Smart mobile phone LCD DSC Sensor Wireless Card  □ Marking Information F: Pb-Free Device Marking Package Shipping SOT23 3K/REEL www.lowpowersemi.com Page 1 of 5 LPM2301B3F Package Type A1sHB B3: SOT23 Pin Configurations S (SOT-23) TOP VIEW G D S G D LPM2301 – 00 Jun.-2018 Email: marketing@lowpowersemi.com Preliminary Datasheet Absolute Maximum Ratings LPM2301 TA=25°C unless otherwise noted Symbol Maximum Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V ID -2 Parameter Continuous Drain TA=25°C Current A TA=70°C -1.5 Pulsed Drain Current B Power Dissipation A TA=25°C IDM -8 PD 1.25 0.8 TA=70°C TJ, TSTG Junction and Storage Temperature Range -55 to 150 A W °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient t ≤ 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead LPM2301 – 00 Jun.-2018 Steady-State RθJA RθJL Email: marketing@lowpowersemi.com Typ. Units 130 °C/W 160 °C/W 80 °C/W www.lowpowersemi.com Page 2 of 5 Preliminary Datasheet LPM2301 Functional Pin Description Symbol Parameter Condition Min Typ. Max Units STATIC PARAMETERS Drain-Source BVDSS Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) -20 ID=-250μA, VGS=0V V -1 VDS=-20V, VGS=0V TJ=55°C -10 VDS=0V, VGS=±12V -0.4 uA ±1 uA -1 V Gate Threshold Voltage VDS=VGS ID=-250μA Static VGS=-4.5V, ID=-2A 130 mΩ On-Resistance VGS=-2.5V, ID=-2A 170 mΩ gFS Forward Transconductance VDS=-5V, ID=-2A 10 S VSD Diode Forward Voltage IS=-1A,VGS=0V RDS(ON) DYNAMIC Drain-Source Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING V VGS=0V, VDS=-15V, f=1MHz 400 pF 220 pF 80 pF 7 nC 1.2 nC nC PARAMETERS Total Gate Charge VGS=-10V, VDS=-15V, Qgs Gate Source Charge Qgd Gate Drain Charge 1.8 tD(on) Turn-On DelayTime 15 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time LPM2301 – 00 -1 PARAMETERS Ciss Qg -0.7 Jun.-2018 ID=-2A VGS=-10V, RL=3.6Ω, RGEN=6Ω Email: marketing@lowpowersemi.com VDS=-15V, 36 nS 42 34 www.lowpowersemi.com Page 3 of 5 Preliminary Datasheet LPM2301 – 00 Jun.-2018 Email: marketing@lowpowersemi.com www.lowpowersemi.com LPM2301 Page 4 of 5 Preliminary Datasheet LPM2301 Packaging Information LPM2301 – 00 Jun.-2018 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 5 of 5