AO3403A

UMW R UMW AO3403A 30V P-Channel MOSFET General Description SOT–23 The AO3403 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS ID (at VGS=-10V) -30V -2.6A RDS(ON) (at VGS=-10V) < 115mΩ RDS(ON) (at VGS =-4.5V) < 150mΩ RDS(ON) (at VGS =-2.5V) < 200mΩ 1. GATE 2. SOURCE 3. DRAIN D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead www.umw-ic.com Steady-State Steady-State A 1.4 W 0.9 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s V -13 PD TA=70°C ±12 -2.2 IDM TA=25°C B Units V -2.6 ID TA=70°C C Maximum -30 Typ 70 100 63 RθJA RθJL 1 Max 90 125 80 Units °C/W °C/W °C/W 友台半导体有限公司 UMW R UMW AO3403A Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.6 ID(ON) On state drain current VGS=-10V, VDS=-5V -13 VGS=-10V, ID=-2.6A Static Drain-Source On-Resistance TJ=125°C 88 115 143 200 A mΩ 150 mΩ mΩ -1 V -1.5 A 315 pF VDS=-5V, ID=-2.6A IS Maximum Body-Diode Continuous Current 8 -0.78 DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance V 200 IS=-1A,VGS=0V Rg nA -1.4 103 Diode Forward Voltage Output Capacitance ±100 -1 139 Forward Transconductance Reverse Transfer Capacitance µA VGS=-2.5V, ID=-1A VSD Coss Units VGS=-4.5V, ID=-2A gFS Crss Max V VDS=-30V, VGS=0V IGSS RDS(ON) Typ 260 VGS=0V, VDS=-15V, f=1MHz S 37 pF 20 pF 8 12 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 5.9 7.2 nC Qg(4.5V) Total Gate Charge 2.8 3.5 nC Qgs Gate Source Charge VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-2.6A 4 0.7 nC nC Qgd Gate Drain Charge 1 tD(on) Turn-On DelayTime 6 ns tr Turn-On Rise Time 3.5 ns tD(off) Turn-Off DelayTime 20 ns tf Turn-Off Fall Time 5 ns trr Qrr VGS=-10V, VDS=-15V, RL=5.76Ω, RGEN=3Ω IF=-2.6A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-2.6A, dI/dt=100A/µs 11.5 4.5 15 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using