BUK7618-55,118

BUK7618-55 N-channel TrenchMOS standard level FET Rev. 2 — 26 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ AEC Q101 compliant „ Low conduction losses due to low on-state resistance „ Electrostatically robust due to integrated protection diodes 1.3 Applications „ Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 55 V ID drain current Tmb = 25 °C - - 57 A Ptot total power dissipation - - 125 W VGS = 10 V; ID = 25 A; Tj = 25 °C - 15 18 ID = 50 A; Vsup ≤ 25 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped - - 125 mJ Static characteristics RDSon drain-source on-state resistance mΩ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy BUK7618-55 Nexperia N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain Simplified outline Graphic symbol mb D G mbb076 S 2 1 3 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number BUK7618-55 BUK7618-55 Product data sheet Package Name Description Version D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404 All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 © Nexperia B.V. 2017. All rights reserved 2 of 12 BUK7618-55 Nexperia N-channel TrenchMOS standard level FET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 55 V VDGR drain-gate voltage RGS = 20 kΩ - 55 V VGS gate-source voltage ID drain current -16 16 V Tmb = 25 °C - 57 A Tmb = 100 °C - 40 A - 228 A IDM peak drain current Tmb = 25 °C; pulsed Tmb = 25 °C Ptot total power dissipation - 125 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Source-drain diode IS source current Tmb = 25 °C - 57 A ISM peak source current pulsed; Tmb = 25 °C - 200 A ID = 50 A; Vsup ≤ 25 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped - 125 mJ HBM; C = 100 pF; R = 1.5 kΩ; (all pins) - 2 kV Avalanche ruggedness non-repetitive drain-source avalanche energy EDS(AL)S Electrostatic discharge Vesd electrostatic discharge voltage 003aaf190 100 Pder (%) 80 003aaf191 100 ID (%) 80 60 60 40 40 20 20 0 0 0 40 80 120 0 160 200 Tmb (°C) 40 80 120 160 200 Tmb (°C) VGS ≥ 5 V Fig 1. Normalized total power dissipation as a function of mounting base temperature BUK7618-55 Product data sheet Fig 2. Normalized continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 © Nexperia B.V. 2017. All rights reserved 3 of 12 BUK7618-55 Nexperia N-channel TrenchMOS standard level FET 003aaf192 103 IDM (A) WDSS (%) RDS(on) = VDS / ID tp = 1 μs 102 003aaf204 120 80 10 μs 100 μs D.C. 10 1 ms 40 10 ms 100 ms 1 1 0 102 10 20 60 100 140 180 T(mb) (°C) VDS (V) Tmb = 25 °C; IDM is single pulse Fig 3. ID = 75 A Safe operating area; continuous and peak drain currents as a function of drain-source voltage Fig 4. Normalised drain-source avalanche energy as a function of mounting-base temperature. 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-mb) thermal resistance from junction to mounting base Conditions Rth(j-a) thermal resistance from junction to ambient minimum footprint; FR4 board Min Typ Max Unit - - 1.2 K/W - 50 - K/W 003aaf193 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 10−1 10−2 0.1 0.05 0.02 δ= P 0 t tp 10−3 10−6 Fig 5. tp T T 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7618-55 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 © Nexperia B.V. 2017. All rights reserved 4 of 12 BUK7618-55 Nexperia N-channel TrenchMOS standard level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 55 - - V ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 50 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C 2 3 4 V ID = 1 mA; VDS = VGS; Tj = 175 °C 1 - - V ID = 1 mA; VDS = VGS; Tj = -55 °C - - 4.4 V VDS = 55 V; VGS = 0 V; Tj = 175 °C - - 500 µA VDS = 55 V; VGS = 0 V; Tj = 25 °C - 0.05 10 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C - 0.02 1 µA VGS = -10 V; VDS = 0 V; Tj = 25 °C - 0.02 1 µA IDSS IGSS RDSon V(BR)GSS drain leakage current gate leakage current VGS = 10 V; VDS = 0 V; Tj = 175 °C - - 20 µA VGS = -10 V; VDS = 0 V; Tj = 175 °C - - 20 µA drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 175 °C - - 38 mΩ VGS = 10 V; ID = 25 A; Tj = 25 °C - 15 18 mΩ gate-source breakdown voltage VDS = 0 V; Tj = 25 °C; IG = 1 mA 16 - - V VDS = 0 V; Tj = 25 °C; IG = -1 mA 16 - - V VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C - 1500 2000 pF - 370 470 pF - 170 250 pF - 15 22 ns Dynamic characteristics Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG(ext) = 10 Ω; ID = 25 A; Tj = 25 °C tr rise time - 30 60 ns td(off) turn-off delay time - 35 50 ns tf fall time - 25 38 ns LD internal drain inductance measured from upper edge of drain mounting base to centre of die; Tj = 25 °C - 2.5 - nH LS internal source inductance measured from source lead soldering point to source bond pad; Tj = 25 °C - 7.5 - nH gfs transfer conductance VDS = 25 V; ID = 25 A; Tj = 25 °C 6 30 - S IS = 50 A; VGS = 0 V; Tj = 25 °C - 1 - V IS = 25 A; VGS = 0 V; Tj = 25 °C - 0.95 1.2 V IS = 50 A; dIS/dt = -100 A/µs; VGS = -10 V; VDS = 30 V; Tj = 25 °C - 48 - ns - 0.1 - µC Source-drain diode VSD source-drain voltage trr reverse recovery time Qr recovered charge BUK7618-55 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 © Nexperia B.V. 2017. All rights reserved 5 of 12 BUK7618-55 Nexperia N-channel TrenchMOS standard level FET 003aaf194 100 16.0 ID 10.0 (A) 80 8.0 7.5 6.0 RDS(on) (mΩ) VGS (V) = 7.0 6.5 25 6.5 60 003aaf195 30 7.0 8.0 6.0 40 20 9.0 15 VGS (V) = 10 5.5 5.0 20 4.5 4.0 0 0 2 4 6 8 10 10 VDS (V) 5 45 65 85 105 ID (A) Tj = 25 °C Fig 6. 25 Tj = 25 °C Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7. 003aaf196 100 ID (A) 80 Drain-source on-state resistance as a function of drain current; typical values 003aaf197 30 gfs (S) 20 60 40 10 20 Tj = 175 °C Tj = 25 °C 0 0 0 2 4 6 8 10 VGS (V) 0 40 60 80 100 ID (A) VDS > ID x RDSon Fig 8. 20 VDS > ID x RDSon Transfer characteristics: drain current as a function of gate-source voltage; typical values 003aaf198 2.5 Fig 9. Forward transconductance as a function of drain current; typical values 003aaf199 5 VGS(th) (V) 4 a 2.0 maximum 3 typical 2 minimum 1.5 1.0 0.5 −100 1 0 100 200 Tmb (°C) 0 −100 0 100 200 Tj (°C) ID = 1 mA; VDS = VGS Fig 10. Normalized drain-source on-state resistance factor as a function of junction temperature BUK7618-55 Product data sheet Fig 11. Gate-source threshold voltage as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 © Nexperia B.V. 2017. All rights reserved 6 of 12 BUK7618-55 Nexperia N-channel TrenchMOS standard level FET 003aaf200 10−1 ID (A) 10−2 003aaf201 3 Ciss C (nF) Coss 2 10−3 2% 10−4 Crss 98 % typical 1 10−5 10−6 0 1 2 3 4 5 0 10−2 10−1 1 VDS (V) Tj = 25 °C; VDS = VGS VGS = 0 V; f = 1 MHz Fig 12. Sub-threshold drain current as a function of gate-source voltage 003aaf202 12 VGS (V) 102 10 VGS (V) Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 003aaf203 100 IF (A) 80 VDS = 14 V 8 60 VDS = 44 V 40 4 Tj = 175 °C Tj = 25 °C 20 0 0 0 10 20 30 40 0 0.4 0.8 1.2 QG (nC) VSDS (V) Tj = 25 °C; ID = 50 A VGS = 0 V Fig 14. Gate-source voltage as a function of gate charge; typical values BUK7618-55 Product data sheet Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 © Nexperia B.V. 2017. All rights reserved 7 of 12 BUK7618-55 Nexperia N-channel TrenchMOS standard level FET 7. Package outline SOT404 Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.20 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-02-11 06-03-16 SOT404 Fig 16. Package outline SOT404 (D2PAK) BUK7618-55 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 © Nexperia B.V. 2017. All rights reserved 8 of 12 BUK7618-55 Nexperia N-channel TrenchMOS standard level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK7618-55 v.2 20110426 Product data sheet - BUK7618-55_1 Modifications: BUK7618-55_1 BUK7618-55 Product data sheet • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP. • Legal texts have been adapted to the new company name where appropriate. 19980401 Product specification - All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 - © Nexperia B.V. 2017. All rights reserved 9 of 12 BUK7618-55 Nexperia N-channel TrenchMOS standard level FET 9. Legal information 9.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 9.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Nexperia product is deemed to offer functions and qualities beyond those described in the Product data sheet. 9.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. BUK7618-55 Product data sheet Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive applications. The product is not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 © Nexperia B.V. 2017. All rights reserved 10 of 12 BUK7618-55 Nexperia N-channel TrenchMOS standard level FET Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 10. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com BUK7618-55 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 © Nexperia B.V. 2017. All rights reserved 11 of 12 Nexperia BUK7618-55 N-channel TrenchMOS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 © Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . . 11 Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 26 April 2011