8385DGYR3040

山东晶导微电子股份有限公司 ES1ALWS THRU ES1JLWS Jingdao Microelectronics co.LTD Surface Mount Superfast Recovery Rectifier Reverse Voltage – 50 to 600 V PINNING Forward Current – 0.5 A PIN FEATURES • Easy pick and place • For surface mounted applications • Low profile package • Built-in strain relief • Superfast recovery times for high efficiency DESCRIPTION 1 Cathode 2 Anode 2 1 Simplified outline SOD-323 and symbol MECHANICAL DATA ▪Case: SOD-323 ▪Terminals: Solderable per MIL-STD-750, Method 2026 ▪A pprox. Weight: 5.48mg / 0.00019oz Absolute Maximum Ratings and Characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbols Parameter ES1ALWS ES1BLWS ES1CLWS ES1DLWS ES1ELWS ES1GLWS ES1JLWS Units Maximum Repetitive Peak Reverse Voltage V RRM 50 100 150 200 300 400 600 V Maximum RMS voltage V RMS 35 70 105 140 210 280 420 V Maximum DC Blocking Voltage V DC 50 100 150 200 300 400 600 V Maximum Average Forward Rectified Current at T c = 125 °C I F(AV) Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load VF Maximum Forward Voltage at 0.5 A Maximum DC Reverse Current T a = 25 °C at Rated DC Blocking Voltage T a =125 °C Typical Junction Capacitance at V R =4V, f=1MHz Maximum Reverse Recovery Time I FSM （1） Operating and Storage Temperature Range 0.5 A 15 A 1.25 1 1.68 V IR 5 100 μA Cj 15 pF t rr 35 ns T j , T stg -55 ~ +150 °C （1）Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A . 2019.01 SOD323-E-ES1ALWS~ES1JLWS-0.5A600V Page 1 of 3 山东晶导微电子股份有限公司 ES1ALWS THRU ES1JLWS Jingdao Microelectronics co.LTD Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 ohm Noninductive t rr 10 ohm Noninductive +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm NonInductive OSCILLOSCOPE Note 1 -1.0 Note：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 300 0.6 0.5 I R - Reverse Current ( μ A) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 0.4 0.3 0.2 0.1 Single phase half-wave 60 Hz resistive or inductive load 100 T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0.0 25 50 75 100 125 150 175 20 0 40 Case Temperature (°C) 80 100 Fig.5 Typical Junction Capacitance T J =25°C 1.0 ES1ALWS~ES1DLWS ES1ELWS/ES1GLWS ES1JLWS 0.01 Junction Capacitance ( pF) Instaneous Forward Current (A) Fig.4 Typical Forward Characteristics 0.1 60 % of PIV.VOLTS 100 10 T J=25°C f = 1.0MHz V sig = 50mV p-p 1 0.001 0 0.5 1.0 1.5 2.0 2.5 Instaneous Forward Voltage (V) 0.1 1.0 10 100 Reverse Voltage (V) Peak Forward Surage Current (A) Fig.6 Maximum Non-Repetitive Peak Forward Surage Current 25 20 15 10 05 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles 2019.01 www.sdjingdao.com Page 2 of 3 山东晶导微电子股份有限公司 ES1ALWS THRU ES1JLWS Jingdao Microelectronics co.LTD PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 E E D b A C A1 ∠ALL ROUND L1 E1 SOD-323 mechanical data A C D E E1 b L1 A1 max 1.1 0.15 1.4 1.8 2.75 0.4 0.45 0.2 min 0.8 0.08 1.2 1.4 2.55 0.25 0.2 max 43 5.9 55 70 108 16 16 min 32 3.1 47 63 100 9.8 7.9 UNIT ∠ mm 9° 8 mil The recommended mounting pad size Marking Type number 1.2 (47) 1.4 (55) 1.2 (47) Marking code ES1ALWS ES1BLWS ESL 1.2 (47) ES1CLWS ES1DLWS ES1ELWS ESM ES1GLWS Unit： mm (mil) 2019.01 JD901183B0 ES1JLWS ESH Page 3 of 3