PJM7002KNSM

PJM7002KNSM N-Channel Enhancement Mode Power MOSFET SOT-523 Features ⚫ Low on resistance RDS(on) ⚫ Low gate threshold voltage ⚫ Low input capacitance ⚫ ESD protected up to 2KV ⚫ VDS= 60V,ID= 0.3A RDS(on)< 3Ω @VGS= 10V 1. Gate 2.Source 3.Drain Marking Code:72K Applications Schematic Diagram ⚫ DC/DC Converter 3.Drain ⚫ Load Switch for Portable Devices 1.Gate 2.Source Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 0.3 A Drain Current -Pulsed IDM 0.8 A Maximum Power Dissipation PD 0.35 W Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ RθJA 357 °C/W Storage Temperature Range Thermal Characteristics Thermal Resistance,Junction-to-Ambient www.pingjingsemi.com Revision：1.0 Aug-2022 1/4 PJM7002KNSM N-Channel Enhancement Mode Power MOSFET Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=10μA 60 -- -- V Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V -- -- 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V -- -- ±10 μA Gate Threshold Voltage VGS(th) VDS=10V,ID=250μA 1 -- 2.5 V Drain-Source On-Resistance Note1 RDS(on) VGS=10V,ID=0.5A -- -- 3 Ω VGS=4.5V,ID=0.2A -- -- 4 Ω Forward Transconductance Note1 gFS VDS=10V,ID=0.2A 80 -- -- mS -- 50 -- pF -- 25 -- pF -- 5 -- pF Static Characteristics Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=25V,VGS=0V,f=1MHz Note: 1. Pulse Test: Pulse width≤300μs, duty cycle≤2%. www.pingjingsemi.com Revision：1.0 Aug-2022 2/4 PJM7002KNSM N-Channel Enhancement Mode Power MOSFET Drain Current ID (A) Drain Current ID (A) Typical Characteristic Curves VDS (V) Channel Temperature TCH (℃) Gate-Source Voltage VGS (V) On-Resistance RDS(on) (Ω) Gate Threshold Voltage VGS(th) (V) Drain-Source Voltage On-Resistance RDS(on) (Ω) On-Resistance RDS(on) (Ω) Drain Current ID (A) Drain Current ID (A) www.pingjingsemi.com Revision：1.0 Aug-2022 Gate-Source Voltage VGS (V) 3/4 PJM7002KNSM N-Channel Enhancement Mode Power MOSFET Package Outline SOT-523 Dimensions in mm www.pingjingsemi.com Revision：1.0 Aug-2022 4/4