PJM60N40TE

PJM60N40TE N-Channel Enhancement Mode Power MOSFET TO-252 Features ⚫ Fast Switching ⚫ Low Gate Charge and RDS(on) ⚫ Low Reverse transfer capacitances ⚫ VDS= 40V,ID= 60A RDS(on)< 13mΩ @VGS= 10V 1. Gate 2.Drain 3.Sourse Schematic Diagram Applications ⚫ Power switching application 2.Drain ⚫ Hard switched and high frequency circuits ⚫ Uninterruptible power supply 1.Gate 3.Source Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 60 A Drain Current-Pulsed Note1 IDM 200 A Single pulse avalanche energy Note4 EAS 400 mJ Avalanche energy, Repetitive Note1 EAR 50 mJ Avalanche Current Note1 IAR 30 A Maximum Power Dissipation PD 65 W Junction Temperature TJ 175 °C TSTG -55 to +175 °C RθJC 2.3 °C/W Storage Temperature Range Thermal Characteristics Maximum Junction-to-Case Note2 www.pingjingsemi.com Revision：2.0 May-2021 1/4 PJM60N40TE N-Channel Enhancement Mode Power MOSFET Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250μA 40 -- -- V Zero Gate Voltage Drain Current IDSS VDS=40V,VGS=0V -- -- 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V -- -- ±1 μA Gate Threshold Voltage Note3 VGS(th) VDS=VGS,ID=250μA 1.0 1.6 2.0 V Drain-Source On-Resistance Note3 RDS(on) VGS=10V,ID=30A -- 7.5 13 mΩ gFS VDS=5V,ID=30A 15 -- -- S -- 1350 -- pF -- 250 -- pF Static Characteristics Forward Transconductance Note3 Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 200 -- pF Turn-on Delay Time td(on) -- 6.5 -- nS Turn-on Rise Time tr VDD=20V, ID=30A -- 17 -- nS Turn-off Delay Time td(off) VGS=10V,RG=3Ω -- 28 -- nS VDS=20V,VGS=0V,f=1MHz Switching Characteristics Turn-off Fall Time tf -- 16 -- nS Total Gate Charge Qg -- 30 -- nC Gate-Source Charge Qgs -- 4.7 -- nC Gate-Drain Charge Qgd -- 6.5 -- nC -- -- 1.5 V -- -- 60 A VDD=20V,ID=30A, VGS=10V Source-Drain Diode Characteristics Diode Forward Voltage Note3 VSD Diode Forward Current Note2 IS VGS=0V,IS=60A Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse width≤300μs, duty cycle≤2%. 4. EAS condition : Tj=25℃ ,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω. www.pingjingsemi.com Revision：2.0 May-2021 2/4 PJM60N40TE N-Channel Enhancement Mode Power MOSFET Typical Characteristic Curves VGS=3V Normalized On-Resistance ID Drain Current (A) 2 VDS=5V 125℃ 25℃ TJ Junction Temperature (℃) VGS Gate-Source Voltage (V) ID Drain Current (A) VDS Drain-Source Voltage (V) ID Drain Current (A) www.pingjingsemi.com Revision：2.0 May-2021 VDS=20V ID=20A Qg Gate Charge (nC) IS Reverse Drain Current (A) RDS(on) On-Resistance (mΩ) VGS Gate-Source Voltage (V) VGS=10V VGS=10V ID=20A 125℃ 25℃ VSD Source-Drain Voltage (V) 3/4 PJM60N40TE N-Channel Enhancement Mode Power MOSFET Package Outline TO-252 Dimensions in mm 6.6±0.076 2.3±0.076 5.3±0.05 2.3 2.3 2.7±0.10 1 c 0.9±0.05 5 5.6±0.076 1.2±0.05 5 b 0.7±0.10 5 1.0±0.05 a 0.5±0.05 0.50±0.05 A-A +0.10 0.6-0.05 2-R0.25 0.10±0.05 e d 1.15±0.10 0.8±0.05 3 A-A 3± f www.pingjingsemi.com Revision：2.0 May-2021 3 4/4