PJM3402NSC
N-Channel Enhancement Mode Power MOSFET
Features
SOT-23-3
⚫ High power and current handing capability
⚫ VDS= 30V,ID= 4A
RDS(on)< 52mΩ @VGS= 10V
2
3
1
Application
1. Gate
Load switch and in PWM applications
Power management
2.Source
3.Drain
Marking Code:P2
Schematic Diagram
3.Drain
1.Gate
2.Source
Absolute Maximum Ratings
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±12
V
Drain Current-Continuous
ID
4
A
Drain Current-Pulsed Note1
IDM
15
A
Maximum Power Dissipation
PD
1.4
W
Junction Temperature
TJ
150
°C
TSTG
-55 to +150
°C
RθJA
89
°C/W
Storage Temperature Range
Thermal Characteristics
Thermal Resistance,Junction-to-Ambient Note2
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PJM3402NSC
N-Channel Enhancement Mode Power MOSFET
Electrical Characteristics
(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V,ID=250μA
30
--
--
V
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
--
--
1
μA
Gate-Body Leakage Current
IGSS
VGS=±12V,VDS=0V
--
--
±100
nA
Gate Threshold Voltage Note3
VGS(th)
VDS=VGS,ID=250μA
0.7
--
1.5
V
Drain-Source On-Resistance Note3
RDS(on)
VGS=10V,ID=4A
--
--
52
mΩ
VGS=4.5V,ID=3A
--
--
65
mΩ
VDS=5V,ID=3.6A
--
14
--
S
--
235
--
pF
--
35
--
pF
Static Characteristics
Forward Transconductance Note3
gFS
Dynamic Characteristics
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
--
18
--
pF
Turn-on Delay Time
td(on)
--
3.5
--
nS
Turn-on Rise Time
tr
VDD=15V,RL=3.75Ω,
--
1.5
--
nS
Turn-off Delay Time
td(off)
VGS=10V,RGEN=3Ω
--
17.5
--
nS
--
2.5
--
nS
--
10
--
nC
--
0.95
--
nC
--
1.6
--
nC
--
--
1.5
V
--
--
4
A
VDS=15V,VGS=0V,f=1MHz
Switching Characteristics
Turn-off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=15V,ID=4A,
VGS=10V
Source-Drain Diode Characteristics
Diode Forward Voltage Note3
VSD
Diode Forward Current Note2
IS
VGS=0V,IS=1A
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse width≤300μs, duty cycle≤2%.
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PJM3402NSC
N-Channel Enhancement Mode Power MOSFET
Typical Characteristic Curves
10
10V
3V
12
2 .5 V
4 .5 V
9
6
VGS=2.0V
3
VDS=5V
8
ID Drain Current (A)
ID Drain Current (A)
15
6
125°C
4
25°C
2
0
0
0
1
2
3
4
0
5
0 .5
80
2
2 .5
3
1 .8
Normalized On-Resistance
RDS(on) On-Resistance (mΩ)
1 .5
VGS Gate-Source Voltage (V)
VDS Drain-Source Voltage (V)
70
60
VGS=4.5V
50
40
VGS=10V
30
0
2
4
6
8
VGS=4.5V
ID=3A
1 .6
1 .4
VGS=10V
ID=4A
1 .2
1
0.8
0
10
25
ID Drain Current (A)
ID=4A
100
125°C
80
60
40
25°C
20
0
2
4
6
8
VGS Gate-Source Voltage (V)
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Revision:2.0 Aug-2021
50
75
100
125
150
175
TJ Junction Temperature(℃)
IS Reverse Drain Current (A)
120
RDS(on) On-Resistance (mΩ)
1
10
1.0E+02
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD Source-Drain Voltage (V)
3/7
PJM3402NSC
N-Channel Enhancement Mode Power MOSFET
400
VDS=15V
ID=4A
350
8
C Capacitance (pF)
VGS Gate-Source Voltage (V)
10
6
4
2
300
250
Ciss
200
150
100
Coss
50
0
Crss
0
0
2
4
6
8
10
12
0
5
Qg Gate Charge (nC)
10
15
20
25
30
VDS Drain-Source Voltage (V)
ID Drain Current (A)
1 0 0 .0
1 0 .0
RDS(ON)
limited
1 0 µs
100µs
1 .0
0 .1
1ms
10ms
TJ(Max)=150°C
TA=25°C
10s
DC
0 .0
0 .0 1
0 .1
1
10
100
VDS Drain-Source Voltage (V)
r(t),NormalizedEffective
TransientThermalImpedance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=125°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Square Wave Pluse Duration (sec)
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PJM3402NSC
N-Channel Enhancement Mode Power MOSFET
Package Outline
SOT-23-3
Dimensions in mm
10
1.6
2.8
±0.1
0.127 +0.05/-0.02
±0.1
±0.1
2.92
12
R0.15MAX
0.95±0.1
0.35±0.05
R0.15MAX
0.06
12
± 0.05
0.65
±0.1
1.1
±0.1
10
Ordering Information
Device
Package
Shipping
PJM3402NSC
SOT-23-3
3,000PCS/Reel&7inches
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Revision:2.0 Aug-2021
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PJM3402NSC
N-Channel Enhancement Mode Power MOSFET
Conditions of Soldering and Storage
Recommended condition of reflow soldering
Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust
the following parameters:
Time length of peak temperature (longer)
Time length of soldering (longer)
Thickness of solder paste (thicker)
Conditions of hand soldering
Temperature: 370 OC
Time: 3s max.
Times: one time
Storage conditions
Temperature
5 to 40 OC
Humidity
30 to 80% RH
Recommended period
One year after manufacturing
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Revision:2.0 Aug-2021
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PJM3402NSC
N-Channel Enhancement Mode Power MOSFET
Package Specifications
The method of packaging
Cover Tape
3,000 pcs per reel
SOT-23-3
Carrier Tape
30,000 pcs per box
10 reels per box
120,000 pcs per carton
4 boxes per carton
Embossed tape and reel data
D
A
T2
T1
Symbol
A
B
C
E
F
D
T1
T2
B
C
E
Value (unit: mm)
Ø 177.8±1
2.7±0.2
Ø 13.5±0.2
Ø 54.5±0.2
12.3±0.3
9.6+2/-0.3
1.0±0.2
1.2±0.2
F
Reel (7'')
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