PJM3402NSA

PJM3402NSA N-Channel Enhancement Mode Power MOSFET SOT-23 Features ⚫ Fast switching ⚫ Low gate charge and RDS(on) ⚫ Low reverse transfer capacitances ⚫ VDS= 30V,ID= 4A RDS(on)< 52mΩ @VGS= 10V 1. Gate 2.Source 3.Drain Marking Code:R2 Applications Schematic Diagram 3.Drain ⚫ PWM applications ⚫ Load switch ⚫ Power management 1.Gate 2.Source Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 4 A Drain Current-Pulsed Note1 IDM 15 A Maximum Power Dissipation PD 1.2 W Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ RθJA 104 ℃/W Storage Temperature Range Thermal Characteristics Thermal Resistance,Junction-to-Ambient Note2 www.pingjingsemi.com Revision：2.0 Jul-2021 1/6 PJM3402NSA N-Channel Enhancement Mode Power MOSFET Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250μA 30 -- -- V Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V -- -- 1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V -- -- ±100 nA Gate Threshold Voltage Note3 VGS(th) VDS=VGS,ID=250μA 0.7 -- 1.5 V Drain-Source On-Resistance Note3 RDS(on) VGS=10V, ID=2A -- -- 52 mΩ VGS=4.5V, ID=2A -- -- 65 mΩ VDS=5V,ID=3.6A -- 14 -- S -- 235 -- pF -- 35 -- pF Static Characteristics Forward Transconductance Note3 gFS Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 18 -- pF Turn-on Delay Time td(on) -- 3.5 -- nS Turn-on Rise Time tr VDS=15V,RL=3.75Ω -- 1.5 -- nS Turn-off Delay Time td(off) VGS=10V,RGEN=3Ω -- 17.5 -- nS VDS=15V,VGS=0V,f=1MHz Switching Characteristics Turn-off Fall Time tf -- 2.5 -- nS Total Gate Charge Qg -- 10 -- nC Gate-Source Charge Qgs -- 0.95 -- nC Gate-Drain Charge Qgd -- 1.6 -- nC -- 0.75 1.5 V -- -- 4 A VDS=15V,ID=4A, VGS=10V Source-Drain Diode Characteristics Body Diode Forward Voltage Note3 Diode Forward Current Note2 VSD VGS=0V,IS=1A IS Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse width≤300μs, duty cycle≤2%. www.pingjingsemi.com Revision：2.0 Jul-2021 2/6 PJM3402NSA N-Channel Enhancement Mode Power MOSFET Typical Characteristic Curves 15 10 10V VDS=5V 2 .5 V 12 ID Drain Current (A) ID Drain Current (A) 3V 4 .5 V 9 6 VGS=2.0V 3 8 6 125°C 4 25°C 2 0 0 0 1 2 3 4 0 5 0 .5 Normalized On-Resistance Drain-Source On-Resistance (mΩ) 80 VGS=2.5V 60 VGS=4.5V 50 40 VGS=10V 2 .5 3 1 .8 VGS=4.5V ID=3A 1 .6 VGS=10V ID=4V 1 .4 1 .2 VGS=2.5V ID=2A 1 0 2 4 6 8 0 10 25 50 75 100 125 150 175 TJ Junction Temperature (℃) ID Drain Current (A) 120 1.0E+02 ID=4A IS Reverse Drain Current (A) Drain-Source On-Resistance (mΩ) 2 0 .8 30 100 125°C 80 60 40 25°C 20 0 2 4 6 8 VGS Gate-Source Voltage (V) www.pingjingsemi.com Revision：2.0 Jul-2021 1 .5 VGS Gate-Source Voltage (V) VDS Drain-Source Voltage (V) 70 1 10 1.0E+01 1.0E+00 1.0E-01 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD Source-Drain Voltage (V) 3/6 400 VDS=15V ID=4A 350 C Capacitance (pF) VGS Gate-Source Voltage (V) 10 8 6 4 300 250 Ciss 200 150 100 Coss 2 50 0 Crss 0 0 2 4 6 8 10 12 0 5 1 0 µs RDS(ON) limited 1 0 0 µs 1 .0 1ms 10ms 0 .1 TJ(Max)=150°C TA=25°C 10s PD DissipationPower (W) 1 0 .0 DC 25 30 0 .0 1 0 .1 1 10 TA=25°C 1000 100 10 1 0 .0 0 0 0 1 0 .0 0 .0 0 1 100 0 .1 10 1000 Pulse Width (s) VDS Drain-Source Voltage (V) Transient Thermal Impedance 20 10000 1 0 0 .0 r(t),Normalized Effective 15 VDS Drain-Source Voltage (V) Qg Gate Charge (nC) ID Drain Current (A) 10 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=125℃/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Square Wave Pluse Duration (sec) T 10 100 1000 PJM3402NSA N-Channel Enhancement Mode Power MOSFET Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping PJM3402NSA SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 Jul-2021 4/6 PJM3402NSA N-Channel Enhancement Mode Power MOSFET Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：2.0 Jul-2021 5/6 PJM3402NSA N-Channel Enhancement Mode Power MOSFET Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision：2.0 Jul-2021 6/6