PJM10H06NSC

PJM10H06NSC N-Channel Enhancement Mode Power MOSFET Features SOT-23-3 ⚫ High density cell design for ultra low RDS(on) ⚫ Fully characterized avalanche voltage and current ⚫ VDS= 100V,ID= 6A RDS(on)< 140mΩ @VGS= 10V 2 3 1 Application 1. Gate  Power switching application  Uninterruptible power supply 2.Source 3.Drain Marking Code:0106C Schematic Diagram 3.Drain 1.Gate 2.Source Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 6 A Drain Current-Pulsed Note1 IDM 20 A Maximum Power Dissipation PD 1.2 W Junction Temperature TJ 150 °C TSTG -55 to +150 °C RθJA 104 °C/W Storage Temperature Range Thermal Characteristics Thermal Resistance,Junction-to-Ambient Note2 www.pingjingsemi.com Revision：2.0 Aug-2021 1/7 PJM10H06NSC N-Channel Enhancement Mode Power MOSFET Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250μA 100 -- -- V Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V -- -- 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V -- -- ±100 nA Gate Threshold Voltage Note3 VGS(th) VDS=VGS,ID=250μA 1.2 -- 2.5 V Drain-Source On-Resistance Note3 RDS(on) VGS=10V,ID=5A -- 110 140 mΩ gFS VDS=5V,ID=2.9A -- 8 -- S -- 690 -- pF -- 120 -- pF Static Characteristics Forward Transconductance Note3 Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 90 -- pF Turn-on Delay Time td(on) -- 11 -- nS Turn-on Rise Time tr -- 7.4 -- nS Turn-off Delay Time td(off) -- 35 -- nS VDS=25V,VGS=0V,f=1MHz Switching Characteristics VDD=30V, ID=2A VGS=10V,RGEN=2.5Ω RL=15Ω Turn-off Fall Time tf -- 9.1 -- nS Total Gate Charge Qg -- 15.5 -- nC Gate-Source Charge Qgs -- 3.2 -- nC Gate-Drain Charge Qgd -- 4.7 -- nC -- -- 1.2 V -- -- 6 A VDS=30V,ID=3A, VGS=10V Source-Drain Diode Characteristics Diode Forward Voltage Note3 VSD Diode Forward Current Note2 IS VGS=0V,IS=6A Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse width≤300μs, duty cycle≤2%. www.pingjingsemi.com Revision：2.0 Aug-2021 2/7 PJM10H06NSC N-Channel Enhancement Mode Power MOSFET ID Drain Current (A) IS Reverse Drain Current (A) Typical Characteristic Curves This Area is Limited By RDS(on) Single Pulse TJ= Max Rated RθJA=41.7°C/W TA=25°C VDS Drain-Source Voltage (V) ID Drain Current (A) ID Drain Current (A) VDS Drain-Source Voltage (V) Pulse Duration=80μS Duty Cycle=0.5%Max VGS Gate-Source Voltage (V) VDS Drain-Source Voltage (V) 140 Normalized On-Resistance RDS(on) On-Resistance (mΩ) Pulse Duration=80μS Duty Cycle=0.5%Max 120 100 80 60 0 2 4 6 ID Drain Current (A) www.pingjingsemi.com Revision：2.0 Aug-2021 8 10 TJ Junction Temperature (℃) 3/7 VGS(th) Threshold Voltage (Normalized) V(BR)DSS Breakdown Voltage (Normalized) PJM10H06NSC N-Channel Enhancement Mode Power MOSFET TJ Junction Temperature (℃) C Capacitance (pF) VGS Gate-Source Voltage (V) TJ Junction Temperature (℃) r(t),Normalized Effective Transient Thermal Impedance Qg Gate Charge (nC) VDS Drain-Source Voltage (V) Duty Cycle Descending Order Single Pluse RθJA=41.7°C/W Note: Duty Factor: D=t1/t2 Peak TJ=PDM*ZθJA*RθJA+TA Square Wave Pluse Duration(sec) www.pingjingsemi.com Revision：2.0 Aug-2021 4/7 PJM10H06NSC N-Channel Enhancement Mode Power MOSFET Package Outline SOT-23-3 Dimensions in mm 10 1.6 2.8 ±0.1 0.127 +0.05/-0.02 ±0.1 ±0.1 2.92 12 R0.15MAX 0.95±0.1 0.35±0.05 R0.15MAX 0.06 12 ± 0.05 0.65 ±0.1 1.1 ±0.1 10 Ordering Information Device Package Shipping PJM10H06NSC SOT-23-3 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 Aug-2021 5/7 PJM10H06NSC N-Channel Enhancement Mode Power MOSFET Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：2.0 Aug-2021 6/7 PJM10H06NSC N-Channel Enhancement Mode Power MOSFET Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23-3 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision：2.0 Aug-2021 7/7