PJM10H05NST

PJM10H05NST N-Channel Enhancement Mode Power MOSFET SOT-223 Features    High density cell design for ultra low RDS(on) Excellent package for good heat dissipation VDS= 100V ，ID= 5A RDS(ON) < 300mΩ @VGS= 10V 2 1 Application  Power switching application  Hard switched and high frequency circuits  Uninterruptible power supply 1. Gate 2.Drain 3 3.Sourse Schematic Diagram 2.Drain 1.Gate 3.Source Absolute Maximum Ratings Ratings at 25℃ Case temperature unless otherwise specified. Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 5 A Drain Current-Pulsed Note1 IDM 20 A Single pulse avalanche energy Note4 EAS 20 mJ Avalanche energy, Repetitive Note1 EAR 4 mJ Avalanche Current Note1 IAR 1.2 A Maximum Power Dissipation PD 3 W Junction Temperature TJ 175 °C TSTG -55 to +175 °C RθJC 42 ℃/W Storage Temperature Range Thermal Characteristics Maximum Junction-to-Case Note2 www.pingjingsemi.com Revision：3.0 Dec-2021 1/5 PJM10H05NST N-Channel Enhancement Mode Power MOSFET Electrical Characteristics (TC=25℃ unless otherwise specified) Parameter Symbol Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250μA 100 -- -- V Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V -- -- 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V -- -- ±100 nA Gate Threshold Voltage Note3 VGS(th) VDS=VGS,ID=250μA 1 1.6 3 V Drain-Source On-Resistance Note3 RDS(on) VGS=10V,ID=3A -- 200 300 mΩ gFS VDS=5V,ID=1A 1 -- -- S -- 190 -- pF -- 23 -- pF Static Characteristics Forward Transconductance Note3 Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 13 -- pF Turn-on Delay Time td(on) -- 6 -- nS Turn-on Rise Time tr VDD=50V, ID=1.3A -- 10 -- nS Turn-off Delay Time td(off) VGS=10V,RG=3Ω -- 10 -- nS VDS=50V,VGS=0V,f=1MHz Switching Characteristics Turn-off Fall Time tf -- 6 -- nS Total Gate Charge Qg -- 5.2 -- nC Gate-Source Charge Qgs -- 0.75 -- nC Gate-Drain Charge Qgd -- 1.4 -- nC -- -- 1.5 V -- -- 5 A VDD=50V, ID=1.3A VGS=10V Source-Drain Diode Characteristics Diode Forward Voltage Note3 VSD Diode Forward Current Note2 IS VGS=0V,IS=5A Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2.Surface Mounted on FR4 Board, t ≤ 10 sec. 3.Pulse Test: Pulse width≤300μs, duty cycle≤2% 4.EAS Condition:Tj=25℃,VDD=50V,VGS =10V,L=0.5mH,Rg=25Ω www.pingjingsemi.com Revision：3.0 Dec-2021 2/5 PJM10H05NST N-Channel Enhancement Mode Power MOSFET Typical Characteristic Curves Normalized On-Resistance ID Drain Current (A) 15 3V 10V 3.5V 10 6V VGS=2.5V 5 0 0 1 2 3 4 VDS Drain-Source Voltage (V) 2.2 1.6 1.4 1.0 125℃ 25℃ 0 0 1 2 3 4 5 6 VGS Gate-Source Voltage (V) 9 3 25 IS Reverse Drain Current (A) RDS(on) On-Resistance (mΩ) 300 240 220 VGS=4.5V VGS=10V 180 0 2 4 6 ID Drain Current (A) www.pingjingsemi.com Revision：3.0 Dec-2021 75 100 125 150 175 200 VDS=50V ID=10A 8 6 4 2 0 0 VGS Gate-Source Voltage (V) 200 50 TJ Junction Temperature (℃) VDS=5V 6 VGS=4.5V ID=5A 1.2 10 12 VGS=10V ID=5A 2.0 1.8 0.8 0 5 15 ID Drain Current (A) 2.6 2.4 8 10 4 8 12 16 Qg Gate Charge (nC) 20 24 1.0 1.2 1.0E+01 1.0E+00 1.0E-01 125℃) 1.0E-02 10.E-03 25℃ 10.E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 VSD Source-Drain Voltage (V) 3/5 PJM10H05NST N-Channel Enhancement Mode Power MOSFET ID Drain Current (A) 1μs 10μs RDS(on) Limited 100μs DC TJ(Max)=175℃ TC=25℃ 1ms 10ms C Capacitance (pF) 300 240 180 120 60 0 VDS Drain-Source Voltage (V) Ciss Coss Crss 20 40 60 80 100 VDS Drain-Source Voltage (V) r(t),Normalized Effective Transient Thermal Impedance D=t1/t2 In Descending Order D=0.5,0.3,0.1,0.05,0.02,0.01. Single Pulse D=t1/t2 PEAKTJ=PDMZthJCRthJC+TC PD Single Pulse T1 T2 Square Wave Pluse Duration(sec) www.pingjingsemi.com Revision：3.0 Dec-2021 4/5 PJM10H05NST N-Channel Enhancement Mode Power MOSFET Package Outline SOT-223 Dimensions in mm www.pingjingsemi.com Revision：3.0 Dec-2021 5/5