PJM10H02NSQ

厂商：
PJ(平晶)
封装：
SOT89-3
描述：
MOSFETS SOT89 N-Channel VDS=100V VGS=±20V Id=2A RDS(on)=210mΩ

数据手册：

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详情介绍
数据手册
价格&库存

PJM10H02NSQ 数据手册

PJM10H02NSQ N-Channel Enhancement Mode Power MOSFET SOT-89 Features ⚫ High density cell design for ultra low RDS(on) ⚫ Excellent package for good heat dissipation ⚫ VDS= 100V,ID= 2A RDS(on)< 240mΩ @VGS= 10V 1. Gate 2.Drain 3.Source Marking Code: 0102Q Applications Schematic Diagram ⚫ Power Switching Application 2.Drain ⚫ Uninterruptible Power Supply 1.Gate 3.Source Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 2 A Drain Current-Pulsed Note1 IDM 5 A Maximum Power Dissipation PD 1.4 W Junction Temperature TJ 150 °C TSTG -55 to +150 °C RθJA 89.2 °C/W Storage Temperature Range Thermal Characteristics Thermal Resistance,Junction-to-Ambient Note2 www.pingjingsemi.com Revision：1.0 Aug-2022 1/8 PJM10H02NSQ N-Channel Enhancement Mode Power MOSFET Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250μA 100 -- -- V Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V -- -- 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V -- -- ±100 nA Gate Threshold Voltage Note3 VGS(th) VDS=VGS,ID=250μA 1.2 1.8 2.5 V Drain-Source On-Resistance Note3 RDS(on) VGS=10V,ID=1A -- 210 240 mΩ gFS VDS=5V,ID=1A 1 -- -- S -- 190 -- pF -- 22 -- pF Static Characteristics Forward Transconductance Note3 Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 13 -- pF Turn-on Delay Time td(on) -- 6 -- nS Turn-on Rise Time tr VDD=50V,ID=1.3A,RL=39Ω -- 10 -- nS Turn-off Delay Time td(off) VGS=10V,RGEN=1Ω -- 10 -- nS VDS=50V,VGS=0V,f=1MHz Switching Characteristics Turn-off Fall Time tf -- 6 -- nS Total Gate Charge Qg -- 5.2 -- nC Gate-Source Charge Qgs -- 0.75 -- nC Gate-Drain Charge Qgd -- 1.4 -- nC -- -- 1.2 V -- -- 2 A VDS=50V,ID=1.3A, VGS=10V Source-Drain Diode Characteristics Diode Forward Voltage Note3 VSD Diode Forward Current Note2 IS VGS=0V,IS=1.3A Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse width≤300μs, duty cycle≤2%. www.pingjingsemi.com Revision：1.0 Aug-2022 2/8 PJM10H02NSQ N-Channel Enhancement Mode Power MOSFET ID Drain Current (A) Normalized On-Resistance Typical Characteristic Curves TJ Junction Temperature (℃) ID Drain Current (A) VGS Gate-Source Voltage (V) VDS Drain-Source Voltage (V) Qg Gate Charge (nC) RDS(on) On-Resistance (Ω) IS Reverse Drain Current (A) VGS Gate-Source Voltage (V) ID Drain Current (A) www.pingjingsemi.com Revision：1.0 Aug-2022 VSD Source-Drain Voltage (V) 3/8 C Capacitance (nF) Normarlized Breakdown Voltage PJM10H02NSQ N-Channel Enhancement Mode Power MOSFET TJ Junction Temperature (℃) ID Drain Current (A) VDS Drain-Source Voltage (V) r(t),Normalized Effective Transient Thermal Impedance VDS Drain-Source Voltage (V) Square Wave Pluse Duration(sec) www.pingjingsemi.com Revision：1.0 Aug-2022 4/8 PJM10H02NSQ N-Channel Enhancement Mode Power MOSFET Package Outline SOT-89 Dimensions in mm Ordering Information Device Package PJM10H06NSQ SOT-89 www.pingjingsemi.com Revision：1.0 Aug-2022 Shipping 1,000PCS/Reel&7inches 3,000PCS/Reel&13inches 5/8 PJM10H02NSQ N-Channel Enhancement Mode Power MOSFET Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：1.0 Aug-2022 6/8 PJM10H02NSQ N-Channel Enhancement Mode Power MOSFET Package Specifications  The method of packaging (1,000PCS/Reel&7inches) Cover Tape 1,000 pcs per reel SOT-89 Carrier Tape 8,000 pcs per box 8 reels per box 32,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T1 E B G F Reel (7'') www.pingjingsemi.com Revision：1.0 Aug-2022 symbol Value(unit:mm) A Φ179±1 B 60.5±0.2 C 15.3±0.3 D 12.5~13.7 E Φ13.5±0.2 F Φ10.0±0.2 G 2.7±0.2 T1 1.0±0.2 C 7/8 PJM10H02NSQ N-Channel Enhancement Mode Power MOSFET Package Specifications  The method of packaging (3,000PCS/Reel&13inches) 3,000 pcs per reel SOT-89 9,000 pcs per box 3 reels per box 36,000 pcs per carton 4 boxes per carton  Embossed tape and reel data B A T E D F Reel (13'') www.pingjingsemi.com Revision：1.0 Aug-2022 symbol Value(unit:mm) A Φ330±1 B 12.7±0.5 C 16.5±0.3 D Φ99.5±0.5 E Φ13.6±0.3 F 2.8±0.3 T1 1.9±0.2 C 8/8

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PJM10H02NSQ

物料型号：PJM10H02NSQ

器件简介：N-Channel增强型功率MOSFET，具有超低导通电阻、良好的散热性能，适用于功率开关应用，如不间断电源。

引脚分配：1. Gate（栅极），2. Drain（漏极），3. Source（源极）

参数特性： - 漏源电压(VDS)：100V - 栅源电压(VGS)：+20V - 连续漏电流(ID)：2A - 脉冲漏电流(IOM)：5A - 最大功耗(PD)：1.4W - 结温(TJ)：150℃ - 存储温度范围(TSTG)：-55至+150℃

热特性： - 结到环境的热阻(ReJA)：89.2℃/W

电气特性：包括静态特性、动态特性和开关特性，例如： - 漏源击穿电压(V(BR)DSS)：100V - 栅阈值电压(VGs(th))：1.2至2.5V - 导通电阻(RDS(on))：210至240mΩ - 输入电容(Ciss)：190pF - 总栅电荷(Qg)：5.2nC

功能详解：提供了器件的工作原理和性能曲线，包括导通电阻随温度和VGS变化的曲线，以及栅电荷与VGS的关系。

应用信息：适用于功率开关应用，特别是不间断电源。

封装信息：SOT-89封装，提供了详细的封装尺寸和订购信息。

PJM10H02NSQ 价格&库存