PJM40P40TE

PJM40P40TE P-Channel Enhancement Mode Power MOSFET TO-252 Features ⚫ Excellent package for good heat dissipation ⚫ High density cell design for ultra low RDS(on) ⚫ VDS= -40V,ID= -40A RDS(on)< 14mΩ @VGS= -10V 1. Gate 2.Drain 3.Sourse Schematic Diagram Applications ⚫ Power switching application 2.Drain ⚫ Hard switched and high frequency circuits ⚫ Uninterruptible power supply 1.Gate 3.Source Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Drain-Source Voltage -VDS 40 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous -ID 40 A Drain Current-Pulsed Note1 -IDM 50 A Single pulse avalanche energy Note4 EAS 544 mJ Maximum Power Dissipation PD 80 W Junction Temperature TJ 150 °C TSTG -55 to +150 °C RθJC 1.88 °C/W Storage Temperature Range Thermal Characteristics Maximum Junction-to-Case Note2 www.pingjingsemi.com Revision：2.0 May-2021 1/5 PJM40P40TE P-Channel Enhancement Mode Power MOSFET Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage -V(BR)DSS VGS=0V,ID=-250μA 40 -- -- V Zero Gate Voltage Drain Current -IDSS VDS=-40V,VGS=0V -- -- 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V -- -- ±0.1 μA Gate Threshold Voltage Note3 -VGS(th) VDS=VGS,ID=-250μA 1.5 -- 3.0 V Drain-Source On-Resistance Note3 RDS(on) VGS=-10V,ID=-12A -- 12 14 mΩ gFS VDS=-5V,ID=-12A 34 -- -- S -- 2960 -- pF -- 370 -- pF Static Characteristics Forward Transconductance Note3 Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 310 -- pF Turn-on Delay Time td(on) -- 10 -- nS Turn-on Rise Time tr VDD=-20V, ID=-20A, -- 18 -- nS Turn-off Delay Time td(off) VGS=-10V,RG=3Ω -- 38 -- nS -- 24 -- nS -- 72 -- nC -- 14 -- nC -- 15 -- nC -- -- 1.2 V -- -- 40 A VDS=-20V,VGS=0V,f =1MHz Switching Characteristics Turn-off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDD=-20V,ID=-12A, VGS=-10V Source-Drain Diode Characteristics Diode Forward Voltage Note3 -VSD Diode Forward Current Note2 -IS Note: 1. 2. 3. 4. VGS=0V,IS=-10A Repetitive Rating: Pulse width limited by maximum junction temperature. Surface Mounted on FR4 Board, t ≤ 10 sec. Pulse Test: Pulse width≤300μs, duty cycle≤2%. TJ=25℃, VDD=-20V, VG=-10V,L=1mH,Rg=25Ω. www.pingjingsemi.com Revision：2.0 May-2021 2/5 PJM40P40TE P-Channel Enhancement Mode Power MOSFET Normalized On-Resistance -ID Drain Current (A) Typical Characteristic Curves VGS=-3.5V TJ Junction Temperature (℃) -ID Drain Current (A) -VGS Gate-Source Voltage (V) -VDS Drain-Source Voltage (V) Qg Gate Charge (nC) 18 -IS Reverse Drain Current (A) RDS(on) On-Resistance (mΩ) -VGS Gate-Source Voltage (V) VGS=-10V 16 14 12 10 8 6 4 0 10 20 30 -ID Drain Current (A) www.pingjingsemi.com Revision：2.0 May-2021 40 -VSD Source-Drain Diode Forward Voltage (V) 3/5 -V(BR)DSS (Normalized) Drain-Source Breakdown Voltage PJM40P40TE P-Channel Enhancement Mode Power MOSFET C CaPacitance (PF) Ciss Coss Crss 10μs 100μs TJ Junction Temperature (℃) r(t),Normalized Effective Transient Thermal Impedance -VDS Drain-Source Voltage (V) TJ Junction Temperature (℃) -ID Drain Current (A) -ID Drain Current (A) -VDS Drain-Source Voltage (V) VGS=0V ID=-250μA Square Wave Pluse Duration(sec) www.pingjingsemi.com Revision：2.0 May-2021 4/5 PJM40P40TE P-Channel Enhancement Mode Power MOSFET Package Outline TO-252 Dimensions in mm 6.6±0.076 2.3±0.076 5.3±0.05 2.3 2.3 2.7±0.10 1 c 0.9±0.05 5 5.6±0.076 1.2±0.05 5 b 0.7±0.10 5 1.0±0.05 a 0.5±0.05 0.50±0.05 A-A +0.10 0.6-0.05 2-R0.25 0.10±0.05 e d 1.15±0.10 0.8±0.05 3 A-A 3± f www.pingjingsemi.com Revision：2.0 May-2021 3 5/5