PJM04P30SQ
P-Channel Enhancement Mode Power MOSFET
SOT-89
Features
⚫ High density cell design for ultra low RDS(on)
⚫ Excellent package for good heat dissipation
⚫ VDS= -30V,ID= -4.1A
RDS(on)< 65mΩ @VGS= -10V
1. Gate
2.Drain
3.Source
Marking Code: 04P30
Applications
Schematic Diagram
⚫ Power Switching Application
2.Drain
1.Gate
3.Source
Absolute Maximum Ratings
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Drain-Source Voltage
-VDS
30
V
Gate-Source Voltage
VGS
±12
V
Drain Current-Continuous
-ID
4.1
A
Drain Current-Pulsed Note1
-IDM
20
A
Maximum Power Dissipation
PD
1.3
W
Junction Temperature
TJ
150
°C
TSTG
-55 to +150
°C
RθJC
96
°C/W
Storage Temperature Range
Thermal Characteristics
Maximum Junction-to-Case Note2
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PJM04P30SQ
P-Channel Enhancement Mode Power MOSFET
Electrical Characteristics
(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
-V(BR)DSS
VGS=0V,ID=-250μA
30
--
--
V
Zero Gate Voltage Drain Current
-IDSS
VDS=-30V,VGS=0V
--
--
1
μA
Gate-Body Leakage Current
IGSS
VGS=±12V,VDS=0V
--
--
±100
nA
Gate Threshold Voltage Note3
-VGS(th)
VDS=VGS,ID=-250μA
0.7
0.9
1.3
V
Drain-Source On-Resistance Note3
RDS(on)
VGS=-10V,ID=-4.1A
--
48
65
mΩ
VGS=-4.5V,ID=-3A
--
56
85
mΩ
VDS=-5V,ID=-4.1A
--
10
--
S
--
880
--
pF
--
105
--
pF
Static Characteristics
Forward Transconductance Note3
gFS
Dynamic Characteristics
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
--
65
--
pF
Turn-on Delay Time
td(on)
--
7
--
nS
Turn-on Rise Time
tr
VDD=- 15V,ID=-4.1A,
--
3
--
nS
Turn-off Delay Time
td(off)
VGS=-10V,RG=6Ω
--
30
--
nS
--
12
--
nS
--
8.5
--
nC
--
1.8
--
nC
--
2.7
--
nC
--
--
1.2
V
--
--
4.1
A
VDS=-15V,VGS=0V,f=1MHz
Switching Characteristics
Turn-off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=-15V,
ID= -4.1A,VGS=-4.5V
Source-Drain Diode Characteristics
Diode Forward Voltage Note3
-VSD
Diode Forward Current Note2
-IS
VGS=0V,IS=-4.1A
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse width≤300μs, duty cycle≤2%.
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PJM04P30SQ
P-Channel Enhancement Mode Power MOSFET
-ID Drain Current (A)
RDS(on) On-Resistance (mΩ)
Typical Characteristic Curves
-ID Drain Current (A)
-ID Drain Current (A)
RDS(on) On-Resistance (Normalized)
-VDS Drain-Source Voltage (V)
-VGS Gate-Source Voltage (V)
1.8
VGS=4.5V
1.6
VGS=10V
1.4
1.2
1.0
0.8
0
25
50
75
100
125
150
175
TJ Junction Temperature (℃)
C Capacitance (pF)
RDS(on) On-Resistance (mΩ)
ID=4.1A
Ciss
Crss
Coss
-VGS Gate-Source Voltage (V)
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Revision:1.0 Feb-2022
-VDS Drain-Source Voltage (V)
3/8
VDS=-15V
ID=4.1A
Qg Gate Charge (nC)
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Revision:1.0 Feb-2022
-IS Reverse Drain Current (A)
-VGS Gate-Source Voltage (V)
PJM04P30SQ
P-Channel Enhancement Mode Power MOSFET
-VSD Source-Drain Voltage (V)
4/8
PJM04P30SQ
P-Channel Enhancement Mode Power MOSFET
Package Outline
SOT-89
Dimensions in mm
Ordering Information
Device
Package
PJM04P30SQ
SOT-89
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Revision:1.0 Feb-2022
Shipping
1,000PCS/Reel&7inches
3,000PCS/Reel&13inches
5/8
PJM04P30SQ
P-Channel Enhancement Mode Power MOSFET
Conditions of Soldering and Storage
Recommended condition of reflow soldering
Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust
the following parameters:
Time length of peak temperature (longer)
Time length of soldering (longer)
Thickness of solder paste (thicker)
Conditions of hand soldering
Temperature: 370 OC
Time: 3s max.
Times: one time
Storage conditions
Temperature
5 to 40 OC
Humidity
30 to 80% RH
Recommended period
One year after manufacturing
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PJM04P30SQ
P-Channel Enhancement Mode Power MOSFET
Package Specifications
The method of packaging (1,000PCS/Reel&7inches)
Cover Tape
1,000 pcs per reel
SOT-89
Carrier Tape
8,000 pcs per box
8 reels per box
32,000 pcs per carton
4 boxes per carton
Embossed tape and reel data
D
A
T1
E
B
G
F
Reel (7'')
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Revision:1.0 Feb-2022
symbol
Value(unit:mm)
A
Φ179±1
B
60.5±0.2
C
15.3±0.3
D
12.5~13.7
E
Φ13.5±0.2
F
Φ10.0±0.2
G
2.7±0.2
T1
1.0±0.2
C
7/8
PJM04P30SQ
P-Channel Enhancement Mode Power MOSFET
Package Specifications
The method of packaging (3,000PCS/Reel&13inches)
3,000 pcs per reel
SOT-89
9,000 pcs per box
3 reels per box
36,000 pcs per carton
4 boxes per carton
Embossed tape and reel data
B
A
T
E
D
F
Reel (13'')
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Revision:1.0 Feb-2022
symbol
Value(unit:mm)
A
Φ330±1
B
12.7±0.5
C
16.5±0.3
D
Φ99.5±0.5
E
Φ13.6±0.3
F
2.8±0.3
T1
1.9±0.2
C
8/8
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