PJM04DP20SE

PJM04DP20SE P-Channel Enhancement Mode Power MOSFET SOT-23-5 Features 5. Source1 ⚫ Fast switching 4. Source2 ⚫ Low gate charge and RDS(ON) ⚫ Low reverse transfer capacitances ⚫ VDS= -20V,ID= -4.1A RDS(on)< 50mΩ @VGS= -4.5V 1.Gate1 2.Drain 3.Gate2 Making Code: JQ Applications Schematic Diagram ⚫ Power management 2.Drain 2.Drain ⚫ Battery powered system ⚫ Load switch and in PWM applications 1.Gate1 3.Gate2 5.Source1 4.Source2 Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Drain-Source Voltage -VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous -ID 4.1 A Drain Current-Pulsed Note1 -IDM 15 A Maximum Power Dissipation PD 1.2 W Junction Temperature TJ 150 °C TSTG -55 to +150 °C RθJA 104 °C/W Storage Temperature Range Thermal Characteristics Thermal Resistance,Junction-to-Ambient Note2 www.pingjingsemi.com Revision：2.0 Mar-2022 1/7 PJM04DP20SE P-Channel Enhancement Mode Power MOSFET Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage -V(BR)DSS VGS=0V,ID=-250μA 20 -- -- V Zero Gate Voltage Drain Current -IDSS VDS=-20V,VGS=0V -- -- 1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V -- -- ±100 nA Gate Threshold Voltage Note3 -VGS(th) VDS=VGS,ID=-250μA 0.4 0.7 1 V Drain-Source On-Resistance Note3 RDS(on) VGS=-4.5V,ID=-4.1A -- 38 50 mΩ VGS=-2.5V,ID=-3A -- 51 70 mΩ VDS=-5V,ID=-4.1A -- 6 -- S -- 740 -- pF -- 290 -- pF Static Characteristics Forward Transconductance Note3 gFS Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 190 -- pF Turn-on Delay Time td(on) -- 12 -- nS Turn-on Rise Time tr VDS=-4V, ID=-3.3A -- 35 -- nS Turn-off Delay Time td(off) VGEN=-4.5V,RG=1Ω,RL=1.2Ω -- 30 -- nS -- 10 -- nS -- 7.8 -- nC -- 1.2 -- nC -- 1.6 -- nC -- -- 1.2 V -- -- 4.1 A VDS=-4V,VGS=0V,f=1MHz Switching Characteristics Turn-off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-4V,ID=-4.1A, VGS=-4.5V Source-Drain Diode Characteristics Diode Forward Voltage Note3 VSD Diode Forward Current Note2 IS VGS=0V,IS=-4.1A Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2.Surface Mounted on FR4 Board, t ≤ 10 sec. 3.Pulse Test: Pulse width≤300μs, duty cycle≤2% www.pingjingsemi.com Revision：2.0 Mar-2022 2/7 PJM04DP20SE P-Channel Enhancement Mode Power MOSFET Typical Characteristic Curves -ID Drain Current (A) VGS=-2V VGS=-1.5V VGS=-1V RDS(on) On-Resistance(Ω) VGS=-5V thru-2.5V VGS=-2.5V VGS=-4.5V -VDS Drain-Source Voltage (V) -ID Drain Current (A) Normalized On-Resistance -ID Drain Current (A) - TJ Junction Temperature(℃) -VGS Gate-Source Voltage (V) TJ=125℃ C Capacitance (pF) RDS(on) On-Resistance(Ω) ID=-4.1A TJ=25℃ -VGS Gate-Source Voltage (V) www.pingjingsemi.com Revision：2.0 Mar-2022 -VDS Drain-Source Voltage (V) 3/7 -Is Reverse Drain Current (A) -VGS Gate-Source Voltage (V) PJM04DP20SE P-Channel Enhancement Mode Power MOSFET ID=-4.1A VDS=-4V TJ=150℃ TJ=25℃ TJ=-55℃ -VSD Source-Drain Voltage (V) r(t),Normalized Effective Transient Thermal Impedance Qg Gate Charge (nC) VGS=0V Square Wave Pluse Duration(sec) www.pingjingsemi.com Revision：2.0 Mar-2022 4/7 PJM04DP20SE P-Channel Enhancement Mode Power MOSFET Package Outline SOT-23-5 Dimensions in mm 2.92 ±0.1 0.127 +0.05/-0.02 1.9±0.1 1.6 2.8 ±0.1 ± 0.1 10 12 R0.15MAX 0.95 ±0.1 0.35±0.05 R0.15MAX 0.06 12 ± 0.05 0.65 ±0.1 1.1 ±0.1 10 Ordering Information Device Package Shipping PJM04DP20SE SOT-23-5 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 Mar-2022 5/7 PJM04DP20SE P-Channel Enhancement Mode Power MOSFET Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：2.0 Mar-2022 6/7 PJM04DP20SE P-Channel Enhancement Mode Power MOSFET Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23-5 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision：2.0 Mar-2022 7/7