PXT8050D

PXT8050 NPN Transistor Features SOT-89 ⚫ For Switching and Amplifier Applications. ⚫ As Complementary Type of the PNP Transistor PXT8550 is Recommended. Equivalent Circuit 2.Collector 1.Base 2.Collector 3. Emitter Marking Code : PXT8050C : GC PXT8050D : GD 1.Base 3.. Emitter Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 1.5 A Maximum Power Dissipation PD 1 W Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Storage Temperature Range www.pingjingsemi.com Revison：3.0 Feb-2022 1/7 PXT8050 NPN Transistor Electrical Characteristics (TA=25℃) Parameter Symbol Min. Typ. Max. Unit 120 -- 200 160 -- 320 40 -- -- ICBO -- -- 100 nA V(BR)CBO 40 -- -- V V(BR)CEO 25 -- -- V V(BR)EBO 6 -- -- V VCE(sat) -- -- 0.5 V VBE(sat) -- -- 1.2 V FT 100 -- -- MHz DC Current Gain at VCE = 1 V, IC = 100 mA Current Gain Group C D HFE at VCE = 1 V, IC = 800 mA Collector Base Cutoff Current at VCB = 40 V Collector Base Breakdown Voltage at IC = 100 μA Collector Emitter Breakdown Voltage at IC = 0.1 mA Emitter Base Breakdown Voltage at IE = 100 μA Collector Emitter Saturation Voltage at IC = 800 mA, IB = 80 mA Base Emitter Saturation Voltage at IC = 800 mA, IB = 80 mA Transition Frequency at VCE = 10 V, IC = 50 mA, f=30MHz www.pingjingsemi.com Revison：3.0 Feb-2022 -- 2/7 PXT8050 NPN Transistor Typical Characteristic Curves Ta = 100℃ DC Current Gain hFE Collector Current IC (mA) Common Emitter Ta = 25℃ Ta = 25℃ Common Emitter VCE = 1V Ta = 100℃ Ta = 25℃ Collector Current IC (mA) Base-Emitter Saturation Voltage VBE(sat) (mV) Collector-Emitter Saturation Voltage VCE(sat) (mV) Collector-Emitter Voltage VCE (V) Common Emitter VCE = 1V Base-Emitter Voltage VBE (mV) www.pingjingsemi.com Revison：3.0 Feb-2022 Ta = 100℃ Collector Current IC (mA) Transition Frequency fT (MHz) 25℃ Ta = 100℃ Ta = Collector Current IC (mA) Collector Current IC (mA) Ta = 25℃ Common Emitter VCE = 10V Ta = 25℃ Collector Current IC (mA) 3/7 PXT8050 NPN Transistor Package Outline SOT-89 Dimensions in mm Ordering Information Device Package PXT8050 SOT-89 www.pingjingsemi.com Revison：3.0 Feb-2022 Shipping 1,000PCS/Reel&7inches 3,000PCS/Reel&13inches 4/7 PXT8050 NPN Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revison：3.0 Feb-2022 5/7 PXT8050 NPN Transistor Package Specifications  The method of packaging (1,000PCS/Reel&7inches) Cover Tape 1,000 pcs per reel SOT-89 Carrier Tape 8,000 pcs per box 8 reels per box 32,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T1 E B G F Reel (7'') www.pingjingsemi.com Revison：3.0 Feb-2022 symbol Value(unit:mm) A Φ179±1 B 60.5±0.2 C 15.3±0.3 D 12.5~13.7 E Φ13.5±0.2 F Φ10.0±0.2 G 2.7±0.2 T1 1.0±0.2 C 6/7 PXT8050 NPN Transistor Package Specifications  The method of packaging (3,000PCS/Reel&13inches) 3,000 pcs per reel SOT-89 9,000 pcs per box 3 reels per box 36,000 pcs per carton 4 boxes per carton  Embossed tape and reel data B A T E D F Reel (13'') www.pingjingsemi.com Revison：3.0 Feb-2022 symbol Value(unit:mm) A Φ330±1 B 12.7±0.5 C 16.5±0.3 D Φ99.5±0.5 E Φ13.6±0.3 F 2.8±0.3 T1 1.9±0.2 C 7/7