PXT8050-53
NPN Transistor
Features
SOT-89
⚫
For Switching and Amplifier Applications.
⚫
As Complementary Type of the PNP Transistor
PXT8550-53 is Recommended.
Equivalent Circuit
2.Collector
1.Base 2.Collector 3. Emitter
Marking Code : Y1
1.Base
3.. Emitter
Absolute Maximum Ratings
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
40
V
Collector Emitter Voltage
VCEO
25
V
Emitter Base Voltage
VEBO
6
V
Collector Current
IC
1.5
A
Maximum Power Dissipation
PD
1
W
Junction Temperature
TJ
150
℃
TSTG
-55 to +150
℃
Storage Temperature Range
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Revison:2.0 Aug-2022
1/7
PXT8050-53
NPN Transistor
Electrical Characteristics (TA=25℃)
Parameter
Symbol
Min.
Max.
Unit
HFE
200
320
--
40
--
ICBO
--
100
nA
V(BR)CBO
40
--
V
V(BR)CEO
25
--
V
V(BR)EBO
6
--
V
VCE(sat)
--
0.5
V
VBE(sat)
--
1.2
V
fT
150
--
MHz
DC Current Gain
at VCE = 1 V, IC = 100 mA
at VCE = 1 V, IC = 800 mA
Collector Base Cutoff Current
at VCB = 40 V
Collector Base Breakdown Voltage
at IC = 100 μA
Collector Emitter Breakdown Voltage
at IC = 0.1 mA
Emitter Base Breakdown Voltage
at IE = 100 μA
Collector Emitter Saturation Voltage
at IC = 800 mA, IB = 80 mA
Base Emitter Saturation Voltage
at IC = 800 mA, IB = 80 mA
Transition Frequency
at VCE = 10 V, IC = 50 mA, f=30MHz
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Revison:2.0 Aug-2022
2/7
PXT8050-53
NPN Transistor
Typical Characteristic Curves
Ta = 100℃
DC Current Gain hFE
Collector Current IC (mA)
Common
Emitter
Ta = 25℃
Ta = 25℃
Common Emitter
VCE = 1V
Ta = 100℃
Ta = 25℃
Collector Current IC (mA)
Base-Emitter Saturation
Voltage VBE(sat) (mV)
Collector-Emitter Saturation
Voltage VCE(sat) (mV)
Collector-Emitter Voltage VCE (V)
Common Emitter
VCE = 1V
Base-Emitter Voltage VBE (mV)
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Revison:2.0 Aug-2022
Ta = 100℃
Collector Current IC (mA)
Transition Frequency fT (MHz)
25℃
Ta =
100℃
Ta =
Collector Current IC (mA)
Collector Current IC (mA)
Ta = 25℃
Common Emitter
VCE = 10V
Ta = 25℃
Collector Current IC (mA)
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PXT8050-53
NPN Transistor
Package Outline
SOT-89
Dimensions in mm
Ordering Information
Device
Package
PXT8050-53
SOT-89
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Revison:2.0 Aug-2022
Shipping
1,000PCS/Reel&7inches
3,000PCS/Reel&13inches
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PXT8050-53
NPN Transistor
Conditions of Soldering and Storage
Recommended condition of reflow soldering
Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust
the following parameters:
Time length of peak temperature (longer)
Time length of soldering (longer)
Thickness of solder paste (thicker)
Conditions of hand soldering
Temperature: 370 OC
Time: 3s max.
Times: one time
Storage conditions
Temperature
5 to 40 OC
Humidity
30 to 80% RH
Recommended period
One year after manufacturing
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Revison:2.0 Aug-2022
5/7
PXT8050-53
NPN Transistor
Package Specifications
The method of packaging (1,000PCS/Reel&7inches)
Cover Tape
1,000 pcs per reel
SOT-89
Carrier Tape
8,000 pcs per box
8 reels per box
32,000 pcs per carton
4 boxes per carton
Embossed tape and reel data
D
A
T1
E
B
G
F
Reel (7'')
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Revison:2.0 Aug-2022
symbol
Value(unit:mm)
A
Φ179±1
B
60.5±0.2
C
15.3±0.3
D
12.5~13.7
E
Φ13.5±0.2
F
Φ10.0±0.2
G
2.7±0.2
T1
1.0±0.2
C
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PXT8050-53
NPN Transistor
Package Specifications
The method of packaging (3,000PCS/Reel&13inches)
3,000 pcs per reel
SOT-89
9,000 pcs per box
3 reels per box
36,000 pcs per carton
4 boxes per carton
Embossed tape and reel data
B
A
T
E
D
F
Reel (13'')
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Revison:2.0 Aug-2022
symbol
Value(unit:mm)
A
Φ330±1
B
12.7±0.5
C
16.5±0.3
D
Φ99.5±0.5
E
Φ13.6±0.3
F
2.8±0.3
T1
1.9±0.2
C
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