MMDT3906SG

MMDT3906SG Double PNP Transistors Features  SOT-23-6 For switching and amplifier applications 4.C2 5.E1 3.B2 6.C1 Equivalent Circuit 2.E2 1.B1 Marking Code 3906 Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 40 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 200 mA Maximum Power Dissipation PD 1 W Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Storage Temperature Range www.pingjingsemi.com Revision：1.0 Mar-2021 1/6 MMDT3906SG Double PNP Transistors Electrical Characteristics (TA=25℃) Parameter Symbol Min. Max. Unit 60 -- 80 -- 100 300 at VCE = -1 V, IC = -50 mA 60 -- at VCE = -1 V, IC = -100 mA 30 -- -ICBO -- .50 nA -IEBO -- 50 nA -V(BR)CBO 40 -- V -V(BR)CEO 40 -- V -V(BR)EBO 6 -- V -VCE(sat) -- 0.25 V -- 0.4 0.65 0.85 -- 0.95 FT 250 -- MHz Cob -- 4.5 pF DC Current Gain at VCE = -1 V, IC = -0.1 mA at VCE = -1 V, IC = -1 mA at VCE = -1 V, IC = -10 mA Collector Base Cutoff Current at VCB = -30V Emitter Base Cutoff Current at VEB = -6 V Collector Base Breakdown Voltage at IC = -10 μA Collector Emitter Breakdown Voltage at IC = -1 mA Emitter Base Breakdown Voltage at IE = -10 μA HFE -- Collector Emitter Saturation Voltage at IC = -10 mA, IB = -1 mA at IC = -50 mA, IB = -5 mA Base Emitter Saturation Voltage at IC = -10 mA, IB = -1 mA -VBE(sat) at IC = -50 mA, IB = -5 mA Transition Frequency at VCE = -20 V, IC = -10 mA,f = 100 MHz Output Capacitance at VCB = -5 V, IE = 0, f = 1 MHz www.pingjingsemi.com Revision：1.0 Mar-2021 V 2/6 MMDT3906SG Double PNP Transistors Typical Characteristic Curves Collector-Emitter Saturation Voltage VCE(sat) (V) IC/IB=10 DC Current Gain hFE Ta=125℃ Ta=-25℃ Ta=+25℃ VCE=1.0V Collector Current IC (mA) Collector Current IC (mA) Base-Emitter Saturation Voltage VBE(sat) (V) Output Capacitance Cob （pF) f=1MHz IC/IB=10 Cob Collector Current IC (mA) www.pingjingsemi.com Revision：1.0 Mar-2021 Collector-Base Voltage VCB (V) 3/6 MMDT3906SG Double PNP Transistors Package Outline SOT-23-6 Dimensions in mm 2.92 ±0.1 0.127 +0.05/-0.02 10 1.6 2.8 ±0.1 ±0.1 1.9±0.1 12 R0.15MAX 0.95±0.1 0.35±0.05 R0.15MAX 0.06 12 ± 0.05 0.65 ±0.1 1.1 ±0.1 10 Ordering Information Device Package Shipping MMDT3906SG SOT-23-6 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：1.0 Mar-2021 4/6 MMDT3906SG Double PNP Transistors Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：1.0 Mar-2021 5/6 MMDT3906SG Double PNP Transistors Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23-6 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F 1.55±0.05 3.50±0.05 2.00±0.05 1.10±0.10 4.00±0.10 8±0.10 4.00±0.10 1.75±0.10 Reel (7'') Pin1 Tape (8mm) www.pingjingsemi.com Revision：1.0 Mar-2021 6/6