MMDT2222ASG

MMDT2222ASG Double NPN Transistors Features  SOT-23-6 For switching and amplifier applications 4.C2 5.E1 3.B2 6.C1 Equivalent Circuit 2.E2 1.B1 Marking Code 2222A Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage VCBO 75 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current IC 600 mA Maximum Power Dissipation PD 1 W Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Storage Temperature Range www.pingjingsemi.com Revision：1.0 Mar-2021 1/6 MMDT2222ASG Double NPN Transistors Electrical Characteristics (TA=25℃) Parameter Symbol Min. Max. Unit at VCE = 10 V, IC = 0.1 mA 35 -- at VCE = 10 V, IC = 1 mA 50 -- 75 -- at VCE = 1 V, IC = 150 mA 50 -- at VCE = 10 V, IC = 150 mA 100 300. at VCE = 10 V, IC = 500 mA 40 -- ICBO -- 10 nA IEBO -- 100 nA V(BR)CBO 75 -- V V(BR)CEO 40 -- V V(BR)EBO 6 -- V VCE(sat) -- 0.3 V -- 1.0 0.6 1.2 -- 2.0 FT 300 -- MHz Cob -- 8 pF DC Current Gain at VCE = 10 V, IC = 10 mA Collector Base Cutoff Current at VCB = 60 V Emitter Base Cutoff Current at VEB = 3 V Collector Base Breakdown Voltage at IC = 10 μA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 10 μA HFE -- Collector Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Base Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA VBE(sat) at IC = 500 mA, IB = 50 mA Transition Frequency at VCE = 20 V, IE = -20 mA, f = 100 MHz Output Capacitance at VCB = 10 V, f = 100 KHz www.pingjingsemi.com Revision：1.0 Mar-2021 V 2/6 MMDT2222ASG Double NPN Transistors Typical Characteristic Curves Ta=25℃ DC Current Gain hFE Collector Current IC (mA) Ta=25℃ VCE=10V 1V Collector-Emitter Voltage VCE (V) Collector Current IC (mA) VCE=10V DC Current Gain hFE Collector-Emitter Saturation Voltage VCE(sat) (V) Ta=25℃ IC/IB=10 Ta=125℃ 25℃ -55℃ Collector Current IC (mA) Collector Current IC (mA) Base-Emitter Saturation Voltage VBE(sat) (V) Ta=25℃ IC/IB=10 Collector Current IC (mA) www.pingjingsemi.com Revision：1.0 Mar-2021 3/6 MMDT2222ASG Double NPN Transistors Package Outline SOT-23-6 Dimensions in mm 2.92 ±0.1 0.127 +0.05/-0.02 10 1.6 2.8 ±0.1 ±0.1 1.9±0.1 12 R0.15MAX 0.95±0.1 0.35±0.05 R0.15MAX 0.06 12 ± 0.05 0.65 ±0.1 1.1 ±0.1 10 Ordering Information Device Package Shipping MMDT2222ASG SOT-23-6 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：1.0 Mar-2021 4/6 MMDT2222ASG Double NPN Transistors Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：1.0 Mar-2021 5/6 MMDT2222ASG Double NPN Transistors Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23-6 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F 1.55±0.05 3.50±0.05 2.00±0.05 1.10±0.10 4.00±0.10 8±0.10 4.00±0.10 1.75±0.10 Reel (7'') Pin1 Tape (8mm) www.pingjingsemi.com Revision：1.0 Mar-2021 6/6